Excellent Thermoelectric Properties Research Articles

Enhancing thermoelectric properties of higher manganese silicide through facilitated non-equilibrium reactions via the introduction of additional Carbon nano-dots

Higher manganese silicide (HMS) has gained significant attention as a compelling choice for thermoelectric (TE) applications at medium temperatures due to its abundance, environmental friendliness, and impact resistance properties. Recent achievement in HMS involves leveraging the synergistic effect of energy filtering, modulation doping, and boundary scattering to enhance the TE performance. However, excellent TE properties on HMS usually demands extreme preparation processes such as shock compression, melt spinning technique, or chemical vapor transport approach, as well as the use of rare and expensive elements or nano-dots (NDs), such as Re, Ge, Ag/Pt alloy, or CsPbBr3 quantum dots. In this study, a facile wet ball milling combing with spark plasma sintering is used to streamline the synthesis processes. Relatively green, cost-effective, and accessible C NDs are used to facilitated non-equilibrium reactions and enhance TE properties of HMS. Due to the C-doped effect, the PF increased from 1.42 to 1.62 mW m−1 K−2 at 723 K, representing an approximately 14 % improvement compared to the pristine HMS. The introduction of C, derived SiC and Mn NDs result in the enhancing phonon scattering, and leading to a reduction in lattice thermal conductivity from 2.21 to 1.81 W m−1 K−1. Consequently, the figure of merit (zT) increases from 0.42 to 0.55 at 823 K, representing an enhancement of approximately ∼ 31 %. Predictably, the incorporation of C NDs into semiconductors stands as one of the effective strategies for enhancing the TE properties.

AI-driven ensemble learning for accurate Seebeck coefficient prediction in half-Heusler compounds based on chemical formulas

Half-Heusler compounds with their unique crystal structure and tunable properties show excellent thermoelectric properties. As a result, these compounds hold great potential for many applications such as thermoelectric devices and energy conversion technologies. This paper presents a machine learning study on developing ensemble learning models to accurately predict the Seebeck coefficient at ambient temperature and arbitrary carrier concentration for both n-type and p-type half-Heusler compounds, based only on their chemical formula. Ensemble learning algorithms proved to be effective regression models for identifying hidden relationships. All models displayed satisfactory performance under 10-fold cross-validation and achieved high R-squared values ranging from 0.87 to 0.95 and low MAE values ranging from 20.8 μV/K to 37.04 μV/K. Among ensemble models, the GBoost shows the best performance for p-type with an R2 value of 0.95. On the other hand, for n-type the Light GBoost and CatBoost models yielded the best results with R2 = 0.94. Ultimately, we validated the accuracy of the model outputs through rigorous Density Functional Theory (DFT) calculations, wherein these models demonstrated their remarkable effectiveness in precisely predicting the Seebeck coefficients for half-Heusler compounds. This research holds significant potential in facilitating the screening of materials for thermoelectric devices, which heavily rely on the critical Seebeck coefficient parameter. The ability to accurately predict this key property can accelerate the identification of promising candidate materials, driving advancements in thermoelectric technology and paving the way for more efficient energy conversion and management solutions.

Theoretical Insight into the Band Alignment at High-κ Oxide XO2/Diamond (X = Hf and Zr) Interfaces with a SiO2 Interlayer for MOS Devices.

Diamond has become a promising candidate for high-power devices based on its ultrawide bandgap and excellent thermoelectric properties, where an appropriate gate dielectric has been a bottleneck hindering the development of diamond devices. Herein, we have systematically investigated the structural arrangement and electronic properties of diamond/high-κ oxide (HfO2, ZrO2) heterojunctions by first-principles calculations with a SiO2 interlayer. Charge analysis reveals that the C-Si bonding interface attracts a large amount of charge concentrated at the diamond interface, indicating the potential for the formation of a 2D hole gas (2DHG). The diamond/HfO2 and diamond/ZrO2 heterostructures exhibit similar "Type II" band alignments with VBOs of 2.47 and 2.21 eV, respectively, which is consistent with experimental predictions. The introduction of a SiO2 dielectric layer into the diamond/SiO2/high-κ stacks exhibits the typical "Type I″ straddling band offsets (BOs). In addition, the wide bandgap SiO2 interlayer keeps the valence band maximum (VBM) and conduction band minimum (CBM) in the stacks away from those of diamond, effectively confining the electrons and holes in MOS devices. This work exhibits the potential of SiO2/high-κ oxide gate dielectrics for diamond devices and provides theoretical insights into the rational design of high-quality gate dielectrics for diamond-based MOS device applications.

Dual Sensing Signal Decoupling Based on Thermoelectric Polymer Aerogels for Precise Temperature and Pressure Recognition

AbstractThe capability to emulate skin‐like temperature and pressure sensing is fundamental for next‐generation artificial intelligence products. However, detecting temperature and pressure simultaneously with a single sensor without signal interference is challenging. Herein, a novel PCC aerogel sensor composed of PEDOT:PSS, CNTs, and CNF via directional freezing technology is developed. The PCC sensor can decouple temperature and pressure stimuli into individual voltage and resistance signals. It exhibits high‐precision temperature sensing capabilities, boasting an exceptionally high Seebeck coefficient of 30.4 µV K‐1 and the ability to detect temperature variations as low as 0.1 K. PCC sensors show excellent sensitivity and fast response times for detecting static and dynamic pressures, as well as high stability after 1000 cycles. Its maximum pressure sensitivity can reach 159.1% kPa−1, and the lowest detection limit is 10 Pa. Additionally, its excellent thermoelectric properties also enable to generating thermopower from human skin for self‐powered pressure sensing. A 3×3 PCC sensor array has been proposed to simulate the unique features of human skin in temperature and pressure recognition. This work provides a scalable manufacturing strategy for multi‐functional tactile sensors.

Thermoelectric properties and thermal transport in two-dimensional GaInSe3 and GaInTe3 monolayers: A first-principles study

We here report the electronic structure calculation of GaInSe3 and GaInTe3 monolayers with the P3m1 (no. 156) space group. The electronic structure and thermoelectric properties of the monolayers are calculated through the Vienna Ab initio Simulation Package and BoltzTraP2 codes. The dynamic and thermodynamic stabilities were verified by calculating their phonon spectra and simulating ab initio molecular dynamics. The monolayers were found to have a direct bandgap, with both PBE + SOC and HSE06 + SOC potentials. The lattice thermal conductivity of GaInTe3 monolayer calculated using Phono3py code shows ultra-low values due to enhanced phonon–phonon scattering. Combining electrical and thermal transport, the values have been evaluated. Importantly, the p-type GaInTe3 has excellent thermoelectric properties at 700 K, with a zT value of 2, indicating that the p-type GaInTe3 has potential application in the field of thermoelectricity.

Monolayer 1T-Ag6S2 with Excellent Thermoelectric Properties.

We obtained a new material called monolayer 1T-Ag6S2 by replacing metal atoms in 1T phase transition-metal dichalcogenide sulfides (TMDs) with octahedral Ag6 clusters. Subsequently, the thermoelectric transport properties of monolayer 1T-Ag6S2 were systematically investigated using first-principles calculations and the generalized gradient approximation (GGA-PBE) exchange correlation functional. The findings demonstrate that monolayer 1T-Ag6S2 displays characteristics of a wide-bandgap semiconductor, with a bandgap of 2.48 eV. Notably, the incorporation of Ag6 clusters disrupts the structural symmetry, effectively enhancing the electronic structure and phonon properties of the material. Due to the flat valence band near the Fermi level, the extended relaxation time of the hole results in a greater effective mass compared to the electron, leading to a significant increase in the Seebeck coefficient. Under optimal doping conditions, the power factor of monolayer 1T-Ag6S2 can achieve 14.9 mW/mK2 at 500 K. The intricate crystal structure induces phonon path bending, reduces the overall frequency of phonon vibrations (<10 THz), and causes hybridization of low-frequency optical and acoustic branches, resulting in remarkably low lattice thermal conductivity (0.20 and 0.17 W/mK along the x and y axes at 500 K, respectively). The monolayer 1T-Ag6S2 demonstrates a remarkably high figure of merit ZT of 3.14 (3.15) on the x (y) axis at 500 K, significantly higher than those of conventional TMD materials. Such excellent thermoelectric properties suggest that monolayer 1T-Ag6S2 is a promising thermoelectric (TE) material. Our work reveals the deep mechanism of cluster substitution to optimize the thermoelectric properties of materials and provides a useful reference for subsequent research.

In‐situ elemental reaction‐regulated Ag2S films enable the best thermoelectric performances

AbstractSilver sulfide thin film, with excellent thermoelectric properties, is few reported due to the complex and time‐consuming high‐temperature or high‐pressure synthesis process. Here, a fast ionic conductor n‐type Ag2S film with good crystallinity and uniform density is prepared by sputtering metal Ag films of different thicknesses on glass and then reacting in S precursor solution at low temperature. At 450 K, β‐Ag2S films can be obtained and underwent a phase transition from α‐Ag2S monoclinic, which had a significant effect on their electrical and thermal properties. The grain size of Ag2S films increases with the increase of film thickness. Before and after the phase transition, the carrier concentration and mobility cause obvious changes in the electrical properties of Ag2S. The carrier concentration of body‐centered cubic phase β‐Ag2S is about three orders of magnitude higher than that of monoclinic phase α‐Ag2S, and the mobility is also 2–3 times that of the latter. Especially, after the phase transition, the conductivity of β‐Ag2S rises exponentially from the zero conductivity of α‐Ag2S and increases with the increase of temperature. The Ag2S film shows the highest figure of merit of 0.83 ± 0.30 at 600 K from the sample with ∼1600 nm thickness, which is the highest record among Ag2S‐based thermoelectric materials reported so far.

Realization of high cryogenic thermoelectric performance for MgAgSb base alloy by regulation heat-treatment process

MgAgSb alloy has attracted wide attention due to its inherent low thermal conductivity, excellent thermoelectric (TE) properties, and environmental friendliness. Although the TE performance has been deeply investigated for the temperature range over 300–700 K, while cryogenic range has seldom report. In this study, a systematic investigation on cryogenic TE performance of α-MgAgSb has been performed. α-MgAgSb alloy has been synthesized by ordinary ball milling followed spark plasma sintering process and then further regulated by heat treatment. The power factor of MgAgSb alloy after 10 days of heat-treating increased by 230%, which is attributed to the reduction of the impurity phase and the improvement of the crystallinity achieved by the optimization of heat treatment. The total thermal conductivity decreased by 18% to 1.15 W m−1 K−1, and the maximum ZT reached 0.264 at 173 K, which is 300% enhancement to untreated one. The ZTavg reached to 0.45 over 173–298 K, located at the pinnacle among cryogenic TE materials. In addition, the ZTeng value of 0.23 related to the highest device conversion efficiency of 5.2% demonstrates good device potential. This work reveals that the purity and the cryogenic TE properties of α-MgAgSb alloy can be effectively improved by heat-treating, and demonstrates the greatly potential of MgAgSb materials in the field of liquefied natural gas's cold energy recovery.

Subacute exposure to black phosphorus quantum dots induces cardiac fibrosis and the potential role of gut microbiota

Black phosphorus quantum dots (BPQDs) have been used as the nano-carrier in the field of biomedicine due to their excellent electronic conductivity, optical and thermoelectric properties. However, it is still lack of evaluation of the safety of BPQDs, specifically on the effects and mechanisms of BPQDs on heart. In this study, the specific pathogen-free male mice were orally administered with different doses of BPQDs (0.02, 0.1, 0.5 mg/kg) for 28 days. BPQDs exposure decreased the heart-body ratio and caused cardiac hypertrophy and fibrosis. Additionally, ferroptosis was observed in the cardiac tissue. The recent study has shown BPQDs oral exposure alter gut microbiota. Here, after exposure to 0.1 mg/kg BPQDs for 28 days, the germ-free mice showed neither cardiac injury nor ferroptosis. Taken together, the study demonstrates that BPQDs induce cardiac ferroptosis and fibrosis, possibly mediated by gut microbiota. This research may aid in enhancing understanding of the biosafety of BP nanomaterials and promoting the sustainable development of nanotechnology.

Origin of shear induced ‘catching bonds’ on half Heusler thermoelectric compounds XFeSb (X = Nb, Ta) and SnNiY (Y = Ti, Zr, Hf)

Half Heusler materials exhibit excellent thermoelectric and mechanical properties, rendering them potential candidates for advanced thermoelectric devices. Currently, the developments on interrelated devices are impeded by their inherent brittleness and limited ductility. Nevertheless, it exists the potential ductility on half Heusler materials with face-centered cubic sub-lattices through the expectation of the occurrence of shear-induced ‘catching bonds’ which can result in excellent ductility on other face-centered cubic materials. This work focuses on half Heusler thermoelectric materials XFeSb (X = Nb, Ta) and SnNiY (Y = Ti, Zr, Hf), the shear deformation failure processes are deeply investigated through the first principle calculations. Shear-induced ‘catching bonds’ are found on XFeSb (X = Nb, Ta) along the (111)/<-1-12> slip system, which releases the internal stress and exactly resulting in the potential ductility. According to the thermodynamic criterion based on generalized stacking fault energy, the essence of shear-induced ‘catching bonds’ are interpreted as the (111)/<-110> slips formed by several 1/3(111)/<-1-12> partial dislocations motions. During the (111)/<-1-12> shear on SnNiY (Y = Ti, Zr, Hf), the structural integrity is maintained without inducing ‘catching bonds’. Different deformation processes occurring in the identical crystal structure are elucidated through the energy explanation, revealing that shear-induced ‘catching bonds’ originate from the crystal plane cleavage on the (111) plane. The present works offer significant advantages for the assessment and comprehension of shear-induced ‘catching bonds’ in other materials and facilitate the development of XFeSb (X = Nb, Ta)-based thermoelectric devices with excellent ductility.

Investigation of structural, electrical and thermoelectric properties of cobalt-zinc ferrites/graphene nanocomposite

The present work was related to synthesis of graphene (0, 1.25 and 2.5 %) incorporation in cobalt-zinc ferrites by using sol–gel auto combustions method. The face center cubic (FCC) crystal structure and crystallite size varies from 16 to 18 nm was examined by XRD analysis. While as the irregular, non-uniform and flake like surface morphology of cobalt zinc/graphene nanocomposite (Co-Zn-G NCs) were observed via SEM images. In addition, the phase identification and presence of different functional groups such as M−O (metal oxide), OH, C-C, C = O and C = C were investigated by Raman spectroscopy and FTIR analyses. Further, I-V two probe method was used to observed the resistivity decrease (7.5x 108 to 2.5x 106 ohm-cm) and conductivity increased (1.2x10-9 to 3.8x10-7S/cm) of Co-Zn-G NCs. After that the thermoelectric behavior of Co-Zn-G NCs indicated that due to increase the temperature then seebeck coefficient decrease as vice versa. The overall result shows that the 2.5 % graphene incorporation in Co-Zn ferrites expressed the excellent electrical and thermoelectric properties. In future the Co-Zn-G nanocomposite used for the development of temperature sensor, reduce eddy current loss and spintronic devices.

The study of thermoelectric energy and mechanical properties by modifying carbon fiber fabric

With the acceleration of global industrialisation, the scarcity and depletion of the world’s energy resources has become a problem that no country can ignore. It is a serious obstacle to the long-term stable development of society. Exploring and developing new energy sources has become the trend of global energy development. In this paper, hydrogen peroxide is used to treat carbon fibre materials. In addition, the thermoelectric reinforcing agent Bi2Te3 is doped into carbon fibre film materials by electrochemical deposition for the purpose of measuring the Seebeck coefficient and electrical conductivity. Technical abbreviations will be explained at the first use. By investigating how changes in the surface structure of carbon fibre fabrics and the addition of bismuth telluride affect their thermoelectric properties, this study establishes a framework for improving the thermoelectric capabilities of carbon fibre fabrics. Experimental results show that carbon fiber fabric treated with H2O2 have excellent thermoelectric and mechanical properties.

Excellent Room Temperature Thermoelectric Performance in Mg3 Sb2 -Based Alloys via Multi-Functional Doping of Nb.

Mg3 Sb2 -based alloys are attracting increasing attention due to the excellent room temperature thermoelectric properties. However, due to the presence and easy segregation of charged Mg vacancies, the carrier mobility in Mg3 Sb2 -based alloys is always severely compromised that significantly restricts the room temperature performance. General vacancy compensation strategies cannot synergistically optimize the complicated Mg3 Sb2 structures involving both interior and boundary scattering. Herein, due to the multi-functional doping effect of Nb, the electron scattering inside and across grains is significantly suppressed by inhibiting the accumulation of Mg vacancies, and leading to a smooth transmission channel of electrons. The increased Mg vacancies migration barrier and optimized interface potential are also confirmed theoretically and experimentally, respectively. As a result, a leading room temperature zT of 1.02 is achieved. This work reveals the multi-functional doping effect as an efficient approach in improving room temperature thermoelectric performance in complicated defect/interface associated Mg3 Sb2 -based alloys.

Synergistic Dual Doping of Sulfur and Copper for Improved Thermoelectric Properties of Silver Selenide Nanomaterials.

Research on flexible thermoelectric (TE) materials has typically focused on conducting polymers and conducting polymer-based composites. However, achieving TE properties comparable in magnitude to those exhibited by their inorganic counterparts remains a formidable challenge. This study focuses on the synthesis of silver selenide (Ag2 Se) nanomaterials using solvothermal methods and demonstrates a significant enhancement in their TE properties through the synergistic dual doping of sulfur and copper. Flexible TE thin films demonstrating excellent flexibility are successfully fabricated using vacuum filtration and hot-pressing techniques. The resulting thin films also exhibited outstanding TE performance, with a high Seebeck coefficient (S=-138.5µVK-1 ) and electrical conductivity (σ=1.19×105 Sm-1 ). The record power factor of 2296.8µWm-1 K-2 at room temperature is primarily attributed to enhanced carrier transport and interfacial energy filtration effects in the composite material. Capitalizing on these excellent TE properties, the maximum power output of flexible TE devices reached 1.13µW with a temperature difference of 28.6K. This study demonstrates the potential of Ag2 Se-based TE materials for flexible and efficient energy-harvesting applications.

Nanoengineering approach toward ultrahigh power factor Ag2Se/polyvinylpyrrolidone composite film for flexible thermoelectric generator

Flexible thermoelectric (TE) generators (F-TEGs), able to harvest heat energy from the human body, are considered to be competitive energy supply devices for wearable and implantable electronics. Herein, we fabricate Ag2Se/polyvinylpyrrolidone (PVP) films on nylon membranes via a novel nanoengineering approach: First, small amount Ag nanoparticles decorated Ag2Se nanowires (NWs) coated with a nanolayer of PVP are synthesized via a Se NW template method, and the Ag nanoparticles react with small amount Se residues at the core of the Ag2Se NWs during hot-pressing and form Ag2Se nanograins rich in defects embedded in big Ag2Se grains. The Ag2Se nanograin has a different orientation from the big Ag2Se grain; hence, the interface between the Ag2Se nanograin and the big Ag2Se grain enhances the phonon scattering but almost does not affect the transport of carriers. An optimized film exhibits a maximum power factor of 2478 ± 67 μW m−1 K−2 (corresponding ZT ∼ 1.05) at 300 K, which is one of the highest values reported for flexible Ag2Se films. The excellent TE properties of the film are attributed to its unique microstructure: highly densified, coherent/semi-coherent Ag2Se grains, embedded Ag2Se nanograins, and a very small amount of PVP located at nanopores. Besides, the film shows good flexibility: after 1500 times bending along a rod with a radius of 4.0 mm, the electrical conductivity still maintains 90.9 %. Furthermore, a 6-leg F-TEG assembled with the optimal film generates a maximum power of 4.58 μW (corresponding power density of ∼ 31.2 W m−2) at a temperature gradient of 38.7 K. This work provides an efficient strategy for the fabrication of ultrahigh-performance Ag2Se-based flexible TE films.

Defect engineering and alloying strategies for tailoring thermoelectric behavior in GeTe and its alloys

GeTe exhibits excellent p-type medium-temperature thermoelectric properties with low toxicity and good mechanical characteristics, making it highly promising for development in the thermoelectric field. However, GeTe is prone to producing Ge vacancies, leading to high p-type carrier concentration, which results in elevated electronic thermal conductivity and a low Seebeck coefficient. This study systematically analyzes intrinsic and extrinsic defects in GeTe and its alloys, focusing on reducing p-type carrier concentration through first-principles calculations. The results reveal that substituting Ge-sites with Bi (BiGe) yields lower donor defect formation energy, effectively reducing p-type carrier concentration of GeTe and its alloys compared to other elemental doping. Additionally, alloying with certain elements, such as Pb, proves favorable for decreased p-type carrier concentration due to lowered energy levels of valence band maximum (VBM). Inspired by this, screening divalent elements for alloying on Ge-sites reveals that Sr, Ba, Eu, and Yb substantially reduce the VBM of GeTe. Further calculations for Ba and Yb-alloyed GeTe confirm changes in formation energies for donor (favorable) and acceptor (unfavorable) defects. Our work provides a systematic investigation of intrinsic and various extrinsic doping defects in GeTe and its alloys, shedding light on possible strategies of optimizing carrier concentration in these compounds.

Substrate-induced asymmetric charge distribution tuning the thermal transport and electronic properties of two-dimensional GaX (X=S and Se)

GaS and GaSe, as members of the III-VI group compounds, have garnered significant attention due to their excellent optoelectronic properties. Recent studies have highlighted the low lattice thermal conductivity (TC) and excellent thermoelectric properties of two-dimensional (2D) GaX (X=S and Se). However, these investigations have focused on free-standing GaX, overlooking the substrate effect. In our study, we conducted first-principles calculations to assess the thermal transport and electronic properties of 2D free-standing and supported GaX (X=S, Se). In terms of thermal transport properties, our findings reveal a significant reduction in the lattice TC of 2D GaS and GaSe when supported on substrates. When supported on the h-BN (0001) substrate, the reductions are 68.01 % and 80.34 %, respectively. Similarly, when supported on the β-Si3N4 (0001) substrate, the lattice TC of 2D GaS and GaSe decreases by 74.60 % and 88.73 %, respectively. The significant decrease in lattice TC is primarily from the asymmetric bonding of GaX induced by the substrates, which enhances phonon anharmonicity and reduces phonon lifetime. In the realm of electronic properties, our investigations reveal that the influence exerted by the h-BN substrate upon the energy band structure of supported GaX is minimal, whereas β-Si3N4 substrate has a greater effect on the energy band structure of the supported GaX due to its high and low undulating atomic surface. Our findings underscore the remarkable tunability of both lattice TC and electronic properties in 2D GaX by selecting different substrates, which holds significant promise for the future applications of 2D GaX in emerging technologies.

Layered PrZnOX (X = P, As) compounds: Promising n-type thermoelectric materials with low lattice thermal conductivity

The heteronanionic materials exhibit low lattice thermal conductivities and excellent electronic transport properties on account of their unique ZrSiCuAs-type crystal structures. In this study, the thermoelectric (TE) properties of the layered PrZnOX (X = P, As) compounds are theoretically elaborated in combination with the first-principles calculations and Boltzmann transport theory. The layered PrZnOP and PrZnOAs compounds are direct semiconductors with wide bandgaps of 1.96 eV and 1.88 eV within HSE06 hybrid functional, respectively. Through a comprehensive evaluation of the crystal structures and mechanical properties, the PrZnOX (X = P, As) compounds are thermodynamically and mechanically stable. The lattice thermal conductivities are 3.60 W/mK and 3.26 W/mK for the PrZnOP and PrZnOAs compounds at 300 K, respectively. The n-type layered PrZnOX (X = P, As) compounds exhibit large power factors on account of the high electrical conductivities and large Seebeck coefficients compared to the p-type situations. Consequently, the high figure of merits (ZTs) of 1.88 and 1.78 at 1000 K are discovered for the n-type PrZnOX (X = P, As) compounds. Our current work not only reveals the underlying mechanisms responsible for the excellent TE properties of PrZnOX (X = P, As) materials, but also elaborates the potential TE application of heteroanionic material at high temperature.

Exploring the thermoelectric properties of two-dimensional organic conjugated polymers with Dirac cone-like electronic structures

2D organic conjugated polymers with Dirac cone-like structures not only exhibit unique advantages in electrical conductivity but also show excellent thermoelectric transport properties. These materials have potential application value in the field of thermoelectrics.

PREPARATION AND THERMOELECTRIC PROPERTIES OF p-TYPE Ag(1-x)Cu(1+x)Te SAMPLES BY SPARK PLASMA SINTERING METHOD

The combination of silver (Ag), copper (Cu), and telluride (Te) yields silver copper telluride (AgCuTe), a new type of ternary liquid-like thermoelectric material. Due to its ultra-low lattice thermal conductivity and highly symmetrical cubic crystal structure, it exhibits excellent thermoelectric properties in the medium-to-high temperature range (400-600 K). However, hexagonal crystal structures with lower symmetry near room temperature can lead to higher thermal conductivity. In addition, the high carrier concentration of the hexagonal crystal structure results in a lower Seebeck coefficient for the material. This seriously affects the application of AgCuTe-based thermoelectric materials in the room temperature range. Therefore, how to improve the thermoelectric performance of AgCuTe-based thermoelectric materials in the room temperature range has received widespread attention from researchers. AgCuTe-based thermoelectric materials were successfully prepared by mechanically alloying Ag, Cu, and Te powders using a planetary ball mill combined with spark plasma sintering. On this basis, the thermoelectric properties of AgCuTe-based materials were optimized by adjusting the Ag/Cu ratio and Ag&lt;sub&gt;2&lt;/sub&gt;Te/CuTe content. The results indicated that at 600 K, the Ag&lt;sub&gt;0.93&lt;/sub&gt;Cu&lt;sub&gt;1.07&lt;/sub&gt;Te sample obtained a high Seebeck coefficient value of approximately 171 &amp;mu;V/K&lt;sup&gt;-1&lt;/sup&gt;. Finally, the ZT peak obtained from the Ag&lt;sub&gt;093&lt;/sub&gt;Cu&lt;sub&gt;1.07&lt;/sub&gt;Te sample was 1.06; compared with AgCuTe (ZT &amp;#61; 0.78), it had increased by about 36&amp;#37;.