Etch Depth Research Articles

Ordered silicon nanocone fabrication by using pseudo-Bosch process and maskless etching

Nanocone arrays are widely employed for applications such as antireflection structures and field emission devices. Silicon nanocones are typically obtained by an etching process, but the profile is hard to attain because anisotropic dry etching generally gives vertical or only slightly tapered sidewall profiles, and isotropic dry plasma etching gives curved sidewalls. In this work, we report the fabrication of cone structures by using masked etching followed by maskless etching techniques. The silicon structure is first etched using fluorine-based plasma under the protection of a hard metal mask, with a tapered or vertical sidewall profile. The mask is then removed, and maskless etching with an optimized nonswitching pseudo-Bosch recipe is applied to achieve the cone structure with a sharp apex. The gas flow ratio of C4F8 and SF6 is significantly increased from 38:22 (which creates a vertical profile) to 56:4, creating a taper angle of approximately 80°. After subsequent maskless etching, the sidewall taper angle is decreased to 74°, and the structure is sharpened to give a pointed apex. The effect of an oxygen cleaning step is also studied. With the introduction of periodic oxygen plasma cleaning steps, both the etch rate and surface smoothness are greatly improved. Lastly, it was found that the aspect ratio-dependent etching effect becomes prominent for dense patterns of cone arrays, with a greatly reduced etch depth at a 600 nm pitch array compared to a 1200 nm pitch array.

Study on the Influence of Etchant Composition and Etching Process on the Precision of Stainless‐Steel Microchannel and Etching Mechanism

The chemical etching method has the advantages of high precision and low cost for the preparation of steel surface microchannel, but the composition of the etching solution and the etching process have a great influence on the precision of the microstructure. In this article, the influence of etching solution composition and the etching time on the etching precision of stainless steel using a mixture of HCl and H2O2 as an etching solution is studied. The reactions and passivation processes that occur during the etching process are analyzed. The etching mechanism is revealed. The sample prepared with HCl:H2O2 = 1:2 can obtain better etching precision and high‐dimensional stability. The amount of lateral erosion and the depth of etching increases with the increase of etching time, resulting in a decrease in the etching factor and precision. Pitting and intergranular corrosion mainly occur during the etching process, and the loss of metal chloride formed in the process forms holes, which become rapid diffusion channels for corrosive Cl and O elements, and promotes the etching process. The etching reaction forms a passivation film on the surface of the substrate, which reduces the rate of the etching reaction.

An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high ION/IOFF ratio and steep subthreshold swing

In this work, we report on the high-performance p-GaN/InGaN/AlN multi-heterostructure p-channel metal–semiconductor field effect transistors (MESFETs) with energy-band modulated quantum well-like InGaN channel and low work function metal tungsten (W) as the gate material. A negative threshold voltage (VTH) of −0.35 V is achieved by precisely controlling the self-aligned etching depth at the active region. Benefiting from the enhanced hole confinement, the ION/IOFF ratio and subthreshold swing of the fabricated-channel MESFET are extracted to be 1.2 × 107 and 66 mV/dec, respectively, at room temperature. The idealized Schottky interface with TMAH and post-gate-annealing treatment shows an ultra-low voltage hysteresis of 0.08 V extracted at subthreshold area in the dual-sweep transfer curves.

Rapid Detection and Elimination of Subsurface Mechanical Damage for Improving Laser-Induced Damage Performance of Fused Silica

The fabrication of SSD-free fused silica optics is a crucial objective for high-power laser applications. To treat the surface of polished fused silica, a combination of RIE/RIBE and deep-controlled etch (DCE) techniques are typically employed. Currently, it is important to consider and study the ideal etching depth and precision while using combined etching techniques to remove the identified SSD. Herein, we present a novel approach to identify the distribution of SSD in fused silica, which corresponds to a specific grinding/polishing process condition. Our method involves using a mobile RIBE to perform cone cutting and remove material from the polished fused silica surface. Afterward, we etch the optical element’s surface with HF to visualize the subsurface cracks and understand their relationship with the RIBE depth. Through a systematic investigation of the combined etching technique, we establish a correlation between the depth of RIBE and DCE and the performance of laser damage. The combined etching technique can be implemented as a dependable approach to treat the surface/subsurface defects in fused silica and has the potential to improve laser damage resistance significantly.

Multi-step plasma etching of high aspect ratio silicon nanostructures for metalens fabrication

Inductively coupled plasma etching of silicon nanostructures for metalens applications using a continuous, multi-step C4F8/SF6 plasma was investigated to achieve high aspect ratio (HAR) features down to tens of nanometers with smooth sidewalls. In the process, the ion bombardment and the free radical transport significantly change among HAR nanostructures as the etching progresses, posing challenges to profile control. With a fixed gas ratio, a change in the profile angle occurs at a depth of approximately 400 nm, transitioning from a positive taper to a negative one. Additionally, a wave-like pillar profile is produced when using three separate (i.e., plasma turned off after each step) etching processes with varying gas ratios. To optimize passivation and etching, we adopt a three-step C4F8/SF6 plasma etching process with varying gas ratios at different etching depths. By keeping the plasma on after each step, the continuous, three-step process provides more flexibility for tuning the etching of HAR nanostructures with smooth and vertical profiles. Metalens nanostructures with 71 nm diameter and 1 μm height were created using the appropriate gas ratio. The feature size variation is less than 10 nm. This proposed continuous, multi-step process improves the controllability of silicon etching in C4F8/SF6 plasma, facilitating the nanofabrication of silicon metalens and other nanodevices.

Temperature Etching and Metallic Agent Concentration Effect on Structure, Morphology and Wettability of Silicon Nanowires

Abstract. Structural, Morphologycal and Wettability of SiliconNanowires (SiNWs) elaborated using Ag assisted electroless chemical etching are investigated. Prior the etching, Ag nanoparticles (AgNPs) were deposited at room temperature in a HF/AgNO3 solution with different concentration of AgNO3. The XRD spectra of the Ag NPs deposit show a good crystallinity. The effects of temperature etching bath and concentrations of AgNO3 on the etching process were examined. The morphological study, performed using a Scanning Electron Microscopy (SEM), shows porous silicon layer of 2µm for the lower temperature etching. For 25°C, perpendicular silicon nanowires about 15µm were formed. For the higher etching temperature (50°C), the silicon nanowire about 50 nm in diameter and 50µm in length were formed. The impact of Ag concentration on the SiNWs formation is examined in the second part of the present work. It is shown that the etching depth decreases as the Ag concentration decreases with values of 2.8 μm and 2 μm for concentrations of 0.025M and 0.0125M, respectively. The hydrophobicity of the samples was monitored by measuring the contact angle between a drop of water and the sample surface. It was established that the morphology is strongly influenced by etching conditions and their wettability changes from superhydrophilic to hydrophobic. FTIR analysis confirms the oxide-free silicon nanowires.

Monolithically integrated multimode interference coupler-based master oscillator power amplifier with dual-wavelength emission around 830 nm

A monolithically integrated dual-wavelength multimode interference coupler-based master oscillator power amplifier is presented. It consists of two shallowly etched, laterally separated ridge waveguide laser cavities as master oscillators with individual distributed Bragg reflector gratings as cavity mirrors. A deeply etched coupling section containing S-bend shaped waveguides and a multimode interference coupler is used to couple the laser emission of the master oscillators into a shallowly etched single waveguide serving as power amplifier. Changing the etch depth for the coupling section enables a compact device layout. In addition, increased radiation angles of modes not coupled into the power amplifier help to suppress beam steering, otherwise indicated by laterally separated far-field intensity distributions. The device provides 0.5 W of dual-wavelength emission around 830 nm in individual and common operation. As designed, both emission wavelengths are separated by 0.5 nm with spectral widths below 20 pm, limited by the spectral resolution of the spectrometer. Both peak wavelengths remain within spectral windows of 50 pm within the available power range. This enables full flexibility selecting operating points for applications such as shifted excitation Raman difference spectroscopy and the generation of THz emission by photomixing. The emission wavelengths can additionally be non-continuously tuned by applying a heater current to resistors implemented next to the distributed Bragg reflector gratings. As an example, selected spectral distances of 0.5 nm, 1.0 nm, 1.5 nm, and 2.0 nm are demonstrated. Near field widths of 5 μm and far field angles of 17° result in beam propagation ratios of 1.4 (1/e2) in all operation modes and enable easy beam shaping or optical single-mode fiber coupling.

Features of cluster ion treatment of the surface of KGd(WO<sub>4</sub>)<sub>2</sub>:Nd single crystal

The features of the surface treatment of single crystals of potassium gadolinium tungstate doped with neodymium ions with low- and high-energy cluster argon ions are considered. Two radically different treatment modes were used: low-energy for more efficient surface smoothing and high-energy for more efficient target etching. Using atomic force microscopy, the topography of the target surface was analyzed before and after cluster ion treatment. Treatment in a low-energy mode was shown to smooth out irregularities on the target surface formed by chemical-mechanical polishing at an etching depth of less than 100 nm. The root-mean-square roughness and maximum height difference of the initial and treated surfaces of potassium gadolinium tungstate doped with neodymium ions were compared. Survey X-ray photoelectron spectra of the initial surface of a KGd(WO4)2:Nd single crystal and after the cluster ion treatment in different modes are presented. The intensities of the potassium and gadolinium peaks were shown to decrease after cluster ion treatment in both modes. A significant decrease in the concentration of potassium atoms in the subsurface layer of the target is explained by the predominant sputtering of potassium as a lighter chemical element. The mutual decrease in the concentrations of gadolinium and potassium atoms can be explained by the weak bonds of these atoms in the lattice of the KGd(WO4)2:Nd single crystal.

Lithography-free tailoring of thin-film nanomorphology for enhanced real-time refractive-index sensing with tunable resonance peaks in the visible spectrum

The precise detection of target substances through refractive-index sensing is essential in various fields such as environmental monitoring, food assessment, and optical applications. This study demonstrates a real-time refractive index sensor based on a liquid-infiltrated metal-insulator-metal island (MIMi) structure in a lithography-free manner. In the MIMi structure, the top layer of the metal islands is formed through solid-state dewetting, which serves as an etching mask to form nanopillars in the insulator layer. This allows for the infiltration of external substances, resulting in different structural colors depending on the refractive index. This design results in a redshift of the resonance peak as the infiltrated refractive index increases. Furthermore, by adjusting the area fraction of the metal-island layer and etching depth of the insulator layer, the resonance-peak position can be controlled within the visible range according to the target refractive index. The advantages of our design are the use of cost-effective materials and the ability to implement scalable fabrication. Our proposed method offers a convenient method to sense the target refractive index in real time.

975 nm multimode semiconductor lasers with high-order Bragg diffraction gratings

The 975 nm multimode diode lasers with high-order surface Bragg diffraction gratings have been simulated and calculated using the 2D finite difference time domain (FDTD) algorithm and the scattering matrix method (SMM). The periods and etch depth of the grating parameters have been optimized. A board area laser diode (BA-LD) with high-order diffraction gratings has been designed and fabricated. At output powers up to 10.5 W, the measured spectral width of full width at half maximum (FWHM) is less than 0.5 nm. The results demonstrate that the designed high-order surface gratings can effectively narrow the spectral width of multimode semiconductor lasers at high output power.

Research on the mitigation of redeposition defects on the fused silica surface during wet etching process.

The laser-induced damage of ultraviolet fused silica optics is a critical factor that limits the performance enhancement of high-power laser facility. Currently, wet etching technology based on hydrofluoric acid (HF) can effectively eliminate absorbing impurities and subsurface defects, thereby significantly enhancing the damage resistance of fused silica optics. However, with an increase in the operating fluence, the redeposition defects generated during wet etching gradually become the primary bottleneck that restricts its performance improvement. The composition and morphology of redeposition defects were initially identified in this study, followed by an elucidation of their formation mechanism. A mitigation strategy was then proposed, which combines a reduction in the generation of precipitation with an acceleration of the precipitation dissolution process. Additionally, we systematically investigated the influence of various process parameters such as extrinsic impurity, etching depth, and megasonic excitation on the mitigation of deposition defects. Furthermore, a novel multiple-step dynamic etching method was developed. Through comprehensive characterization techniques, it has been confirmed that this new etching process not only effectively mitigate redeposition defects under low fluence conditions but also exhibits significant inhibition effects on high fluence precursors. Consequently, it significantly enhances the laser damage resistance performance of fused silica optics.

Theoretical Study of Electronic and Thermoelectric Properties of Ultra-Thin Silicene and Germanene

In this study, we used the Non-Equilibrium Green Function (NEGF) and Density Functional Theory (DFT) to analyze the nanoscale electronic properties of silicene and germanene structures, the band structure and Density of State (DOS) for the unit cell of silicene and germanene are found that the energy gap is (0 eV) in both. A comparison was made between silicene and germanene in terms of electrical and thermal properties, by calculating the transmission coefficient T(E) for silicene patterns (Si1, Si2, Si3, and Si4) and germanene patterns (Ge1, Ge2, Ge3, and Ge4). The results show that T(E) decreases with increasing etching depth, which also leads to a decrease in electronic conductivity. Moreover, the value of the Seebeck coefficient (S) increases with increasing drilling depth, and also the sign of S varies from a positive value for (Si1, Si4, Ge1, Ge2, Ge4) to a negative value for (Si2, Si3, Ge3) at Fermi level (Ef) equal to (0 eV). The highest value of the figure of merit is about (1.8) for the Ge4 structure.

A High-Efficiency Wideband Grating Coupler Based on Si3N4 and a Silicon-on-Insulator Heterogeneous Integration Platform.

To fully utilize the advantages of Si3N4 and Silicon-On-Insulator to achieve a high-efficiency wideband grating coupler, we propose and numerically demonstrate a grating coupler based on Si3N4 and a Silicon-On-Insulator heterogeneous integration platform. A two-dimensional model of the coupler was established and a comprehensive finite difference time domain analysis was conducted. Focusing on coupling efficiency as a primary metric, we examined the impact of factors such as grating period, filling factor, etching depth, and the thicknesses of the SiO2 upper cladding, Si3N4, silicon waveguide, and SiO2 buried oxide layers. The calculations yielded an optimized grating coupler with a coupling efficiency of 81.8% (-0.87 dB) at 1550 nm and a 1-dB bandwidth of 540 nm. The grating can be obtained through a single etching step with a low fabrication complexity. Furthermore, the fabrication tolerances of the grating period and etching depth were studied systematically, and the results indicated a high fabrication tolerance. These findings can offer theoretical and parameter guidance for the design and optimization of high-efficiency and broad-bandwidth grating couplers.

Effectiveness of Different Etching Agents on Enamel Surface and Shear Bond Strength: An In Vitro Evaluation.

Background Enamel etching is of utmost importance during the orthodontic bonding procedure. Phosphoric acid, hydrofluoric acid, and citric acid are used in specific concentrations to create surface irregularities on enamel surfaces, enhancing the bond strength of the orthodontic attachment. Therefore, it is essential to evaluate the type of etchant for reliable orthodontic bracket bonding with minimal damage to the enamel surface. Aims and objectives This study aimed to investigate the morphological changes on the enamel surface after treatment with different surface etchants, assess the depth of penetration, and evaluate the shear bond strength (SBS) of orthodontic brackets. Materials and methods One hundred and one extracted premolar teeth were used to investigate morphological changes on the enamel surface treated with 37% phosphoric acid, 11% hydrofluoric acid, and 20% citric acid. It was evaluated on a scanning electron microscope (Jeol Scientific Equipment, Jeol Limited, Akishima, Japan), and the SBS of brackets on enamel treated with different etching agents was evaluated using an Instron Universal Testing Machine (UTM; Instron Model: 5982, Universal Testing Systems, Norwood, MA). Group A had 60 test samples. Group B had 40 test samples. One control without any acid etching was used in both groups. Subgroup A1 (n = 30) was evaluated for surface characteristics of acid-etched enamel. Subgroup A2 was assessed for the penetration depth of various etchants. Group B (n = 40) was tested for SBS. The results were tabulated and analyzed using IBM SPSS Statistics, version 20.0 (IBM Corp., Armonk, NY). Post hoc Tukey HSD test and one-way analysis of variance were used to assess SBS and penetration depth of etchants (P ≤ 0.05). Pearson's correlation test was used to correlate SBS, etching pattern, and penetration depth. The chi-square test was used to test the frequency of types of etching patterns. Results Intergroup correlations between etching depth, etching pattern evaluated on SEM, and SBS evaluated on the UTM showed a high statistical correlation between etching depth & SBS, etching depth & etching pattern, and SBS & etching pattern between A1, A2, and group B (P ≤ 0.001). A highly significant negative correlation between SBS & etching pattern (P = 0.42) was observed among intra-group correlation. Non-significant correlations were found between etching depth & SBS and etching depth & etching pattern within the 20% citric acid etch group (P = 0.370 and 0.141, respectively). Conclusion Penetration depth obtained was highest with 11% hydrofluoric acid, followed by 37% phosphoric acid and20% citric acid. In addition, 11% hydrofluoric acid showed the highest bond strength. Acid etching showed better penetration depth and bond strength than control.

Analysis of High-Order Surface Gratings Based on Micron Lasers on Silicon

High-quality silicon-based lasers are necessary to achieve full integration of photonic and electronic circuits. Monolithic integration of III–Vmicron lasers on silicon by means of the aspect ratio trapping (ART) method is a promising solution. To obtain sufficient optical feedback to excite the laser without introducing complex fabricating processes, we have designed a high-order surface grating on micron lasers which was epitaxially grown by the ART method and can be fabricated by common UV lithography. The performance of the grating was analyzed by the finite-difference time-domain (FDTD) method and eigenmode expansion (EME) solver. After simulation optimization, the etching depth was set to 0.6 μm to obtain proper reflection. The width of the slots and the slot spacing were selected to be 1.12 μm and 5.59 μm, respectively. Finally, we obtained results of 4% reflectance and 82% transmittance at a 1.55 μm wavelength at 24 periods.

16-channel snapshot multispectral imaging based on integrated Fabry Perot microcavity array

<sec>By designing and fabricating a narrow-band Fabry-Perot multi-beam interference spectroscopic microcavity array, and integrating it with a visible light detector focal plane array, we demonstrate a small compact multispectral imaging detector. The micro-cavity filter array with 4×4 basic repeating units and a total of 2048×2048 pixels is obtained on a quartz substrate by the four-fractal combination lithograph-etching process. Then the micro miniatured multispectral imaging detector is formed by fitting with the detector chip. The depth and precision of the etching will determine the distribution and offset of the central wavelength of the narrowband spectral channel respectively. The results show that the etching rate of reactive ion is (3.6 ± 0.2) Å/s, and the process is stable and controllable. Due to the different etching depths, the basic repeating unit forms 16 different levels of steps, and the process achieves the design expectation well.</sec><sec>The results are obtained as follows: the response spectrum peak of the microcavity array sample varies from 520 to 680 nm, the free spectrum range is 160 nm, the full width at the half-peak is less than 10 nm, the transmittance is about 70%, the relative half-width of the transmittance peak at 590 nm is 1.19%, and the waveform coefficient is 2.78. A 16-channel multispectral camera is constructed by using the optical micro-precision assembly device to realize the precise alignment and the fitting of the micro-cavity filter array and the image sensor. Xenon lamp and monochromator are used as tunable wavelength monochromatic cooperative light source to detect the effect of 16-channel snapshot multispectral imaging on a pixel scale. The results show that the multispectral imaging detector has 16 different narrow-band response spectra. The characteristic spectrum of the target can be clearly distinguished by spectral channel.</sec><sec>When imaging the target with known spectral characteristics, for a certain frame of multi-spectral image, selecting a suitable spectral channel can eliminate the background in the field of view through image subtraction and improve the contrast of the target. In the dark room condition, we take the LED light source with center wavelength varying in a range between 528 and 589 nm as the target (the wavelength coincides with the working wavelength of the spectral channel), and effectively suppress the background through the spectral differential intensity subtraction, which can improve the accuracy and sensitivity of the target capture. The 16-channel snapshot multi-spectral imaging detector based on integrated Fabry-Perot microcavity array has the advantages of small size, high integration and strong environmental adaptability, and is expected to play a role in realizing the real-time detection of weak moving targets, auxiliary diagnosis of skin surface observation, and high dynamic range imaging of target observation under backlight conditions.</sec>

Clean SiO2 atomic layer etching based on physisorption of high boiling point perfluorocarbon.

This study aimed to evaluate the SiO2 atomic layer etching (ALE) process that is selective to Si3N4 based on the physisorption of high boiling point perfluorocarbons (HBP PFCs; C5F8, C7F14, C6F6, and C7F8 have boiling points above room temperature). The lowering of the substrate temperature from 20 °C to -20 °C not only increased SiO2 etch depth per cycle (EPC) but also increased etch selectivity of SiO2/Si3N4 to near infinity. Due to the differences in fluorocarbon adsorption at a temperature during the physisorption depending on boiling points of PFCs, the desorption time and ion bombardment energy during the desorption step needed to be optimized, and higher ion bombardment energy and longer desorption time were required for higher HBP PFCs. Even though near infinity etch selectivity of SiO2/Si3N4 was obtained, for the SiO2 etching masked with Si3N4 patterns, due to the adsorption of PFC on the sidewall of the Si3N4 layer, the difficulty in anisotropic etching could be observed. By adding an O2 descumming step in ALE processes, an anisotropic SiO2 etch profile could be obtained with no adsorption of fluorocarbon on the chamber wall. Therefore, it is believed that the HBP ALE processes can be applicable for achieving high selective SiO2/Si3N4 with more stability and reliability.

Twelve-channel LAN wavelength-division multiplexer on lithium niobate

Abstract A twelve-channel local-area-network (LAN) wavelength-division multiplexing (LWDM) filter is proposed and demonstrated with a uniform channel spacing of 4.5 nm (800 GHz) in the O-band of 1270–1330 nm by using x-cut lithium-niobate-on-insulator (LNOI) photonic waveguides for the first time. The present LWDM filter consists of twelve single-channel bandpass filters based on multimode waveguide gratings (MWGs) assisted with a TE0/TE1 mode (de)multiplexer. In particular, two stages of MWGs in cascade are introduced for each single-channel bandpass filter, in order to achieve high sidelobe suppression ratios, thus reducing interchannel crosstalk. For the fabricated twelve-channel LWDM filter, all the channels have very excellent box-like spectral responses with low excess losses of ∼0.6 dB, broad 1-dB bandwidths of ∼2.9–3.4 nm (which is close to 75 % of the channel spacing), and ultra-low interchannel crosstalk of <−40 dB in experiments. In addition, the present device is highly tolerant to the random variations of the etching depth (±20 nm) and the grating waveguide width (±20 nm) of the LNOI photonic waveguides, showing great potential for high-capacity WDM systems.

Fabrication of a large computer-generated hologram with high diffraction efficiency and high accuracy by scanning homogenization etching.

The diffraction efficiency, defined as the ratio of diffracted power to incident power, is one of the key working indicators for a computer-generated hologram (CGH). The CGH with high diffraction efficiency could suppress stray light and eliminate ghost images, thus improving interferometric performance in aspherical testing of low-reflectivity or large off-axis distance surfaces. However, the high-efficiency CGH is hard to precisely fabricate by traditional reactive ion etching and focusing ion beam, because it requires high etching depth with a high uniformity and sub-nanometric roughness in the glass, especially in the fabrication of a large CGH with an aperture of up to 300 mm. In this study, fabrication of the above-mentioned CGH was demonstrated via what we believe to be a new method called scanning homogenization etching (SHE), in which the ion source with a Gaussian energy distribution accurately scans the glass surface to realize homogenization etching. Different from controlling dwell time at each etching point, this paper proposes to control the scanning rate to achieve not only uniform but also quantitative depth removal in a single scan. Moreover, the depth errors in deep etching across the whole glass surface can be remarkably reduced due to homogenization effects introduced by multiple scanning etching. Finally, the target etching depth of 692.3 nm with an etching uniformity of 2.2% in the etching of a 300 mm CGH was achieved. The roughness of the etched and unetched area both have Ra values of 0.3 nm. The diffraction efficiency of working order is 39.998%, achieving 98.6% of the theoretical diffraction efficiency. In addition, the SHE is not limited by the aperture of the ion source, so it can achieve even larger diffractive optical elements with high diffraction efficiency and high accuracy.

Probing and controlling oxygen impurity diffusion in h-BN semi-bulk crystals

Combining its unique features of ultrawide bandgap (UWBG) and two-dimensional nature, h-BN has been explored for emerging applications such as deep ultraviolet optoelectronic devices and single photon emitters. One of the unusual applications of h-BN is for solid-state neutron detectors by utilizing the property of high thermal neutron capture cross section of B-10 as well as its UWBG properties. Although a record high detection efficiency of 59% has been attained by h-BN detectors, the understanding/minimization of defects and impurities is still needed to further advance the h-BN material and detector technologies. We report metal organic chemical vapor deposition growth and oxygen (O) impurity diffusion in thick h-BN. The diffusion coefficient (D) of O impurities has been measured via the evolution of an oxygen related emission with the etching depth, providing a value of D of ∼ 2 × 10−13 cm2/s at 1450 °C and supporting the interpretation that oxygen in h-BN is a substitutional donor. A multiple-buffer-layer approach was employed to mitigate to a certain degree the issue of oxygen diffusion from sapphire substrate during growth. It was demonstrated that the performance of h-BN neutron detectors fabricated from the wafer incorporating multiple buffer layers was significantly improved, as manifested by the enhanced thermal neutron detection efficiency. The advancement of the crystal growth technology of h-BN semi-bulk crystals creates applications in optoelectronic and power electronic devices utilizing the UWBG semiconductor properties of h-BN, while high efficiency h-BN neutron detectors have the potential to supplant the traditional He-3 gas detectors in various application areas by offering the obvious advantages of UWBG semiconductor technologies.