Clean SiO2 atomic layer etching based on physisorption of high boiling point perfluorocarbon.

Abstract

This study aimed to evaluate the SiO2 atomic layer etching (ALE) process that is selective to Si3N4 based on the physisorption of high boiling point perfluorocarbons (HBP PFCs; C5F8, C7F14, C6F6, and C7F8 have boiling points above room temperature). The lowering of the substrate temperature from 20 °C to -20 °C not only increased SiO2 etch depth per cycle (EPC) but also increased etch selectivity of SiO2/Si3N4 to near infinity. Due to the differences in fluorocarbon adsorption at a temperature during the physisorption depending on boiling points of PFCs, the desorption time and ion bombardment energy during the desorption step needed to be optimized, and higher ion bombardment energy and longer desorption time were required for higher HBP PFCs. Even though near infinity etch selectivity of SiO2/Si3N4 was obtained, for the SiO2 etching masked with Si3N4 patterns, due to the adsorption of PFC on the sidewall of the Si3N4 layer, the difficulty in anisotropic etching could be observed. By adding an O2 descumming step in ALE processes, an anisotropic SiO2 etch profile could be obtained with no adsorption of fluorocarbon on the chamber wall. Therefore, it is believed that the HBP ALE processes can be applicable for achieving high selective SiO2/Si3N4 with more stability and reliability.