Abstract
High-quality silicon-based lasers are necessary to achieve full integration of photonic and electronic circuits. Monolithic integration of III–Vmicron lasers on silicon by means of the aspect ratio trapping (ART) method is a promising solution. To obtain sufficient optical feedback to excite the laser without introducing complex fabricating processes, we have designed a high-order surface grating on micron lasers which was epitaxially grown by the ART method and can be fabricated by common UV lithography. The performance of the grating was analyzed by the finite-difference time-domain (FDTD) method and eigenmode expansion (EME) solver. After simulation optimization, the etching depth was set to 0.6 μm to obtain proper reflection. The width of the slots and the slot spacing were selected to be 1.12 μm and 5.59 μm, respectively. Finally, we obtained results of 4% reflectance and 82% transmittance at a 1.55 μm wavelength at 24 periods.
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