Epitaxial Silicon Deposition Research Articles

The Kinetics of Epitaxial Silicon Deposition by the Hydrogen Reduction of Chlorosilanes†

ABSTRACT A model is proposed for the physical and chemical processes involved in the epitaxial deposition of silicon by the hydrogen reduction of chlorosilanes, in which it is assumed that there is a boundary-layer of relatively static gas adjacent to the silicon surface; that the chlorosilane and hydrogen diffuse across the boundary-layer and react at the silicon surface; and that the gaseous products of reaction diffuse back across the boundary-layer and are swept away in the main gas stream. By assuming that the gas in contact with the silicon surface is in equilibrium at the surface temperature, the transport equations are solved for the case where the equilibrium reactions are 2SiHCl3 ½ SiCl4 + SiCl2 + H2, SiCl4 + H2 ½ SiCl2 + 2HC1 and Si + SiCl4 ½ 2SiCl2, and an expression is derived for the deposition rate which involves only known terms. The predictions of the theory are compared with the experimental results, and it is shown that reasonable agreement obtains.

1784. Epitaxial deposition of silicon using ultra-thin alloy zone crystallization: J D Filby and S Nielsen, Microelectronics and Reliability, 5, 1966, 11–14

Chiral titanium complex (1), prepared in situ from optically pure binaphthol and diisopropoxytitanium dihalide in the presence of molecular sieves, is shown to catalyze the addition reactions of crotylsilanes and -stannanes to glyoxylates to afford (syn)-α-hydroxy-β-methyl esters in highly scalemic forms with high diastereoselectivity.

Etching corundum with silicon

Abstract If the rate of deposition of silicon on corundum in vacuo is sufficiently low, substantial etching of the corundum occurs at temperatures where the epitaxial deposition of silicon was expected.

Epitaxial deposition of silicon by vacuum evaporation: S Nielsen et al, Condensation and Evaporation of Solids, Gordon and Breach (New York and London)m 1964, 685–698

Epitaxial deposition of silicon by vacuum evaporation: S Nielsen et al, Condensation and Evaporation of Solids, Gordon and Breach (New York and London)m 1964, 685–698

Kinetics of Epitaxial Silicon Deposition by a Low Pressure Iodide Process

This report is primarily a study of the factors which control the vapor transport process of silicon in a modified closed tube low pressure cyclic iodide process. The kinetics of transport from the source to the substrate are examined and are found to agree with a diffusion controlled mechanism. The model is useful for estimating the deposition rate under a variety of conditions. The process is found capable of depositing silicon on silicon substrates at relatively high deposition rates. Impurity doping with this process is accomplished by incorporating the desired impurity into the source silicon.

Multiple Slice Epitaxial Deposition of Silicon in Resistance Heated Furnace

not Available.

The epitaxial deposition of silicon on quartz

Abstract Epitaxial layers of silicon have been grown on single crystal quartz by a chemical reaction, the hydrogen reduction of trichlorosilane, at the substrate surface. Glancing angle electron diffraction has been used to determine the orientation dependence, which is {001} silicon parallel to (0001) quartz, and {010} silicon parallel to {1010} quartz. The growth process has been studied using electron microscope techniques, and found to be somewhat similar to that previously observed for vacuum condensed metal films. Transmission electron microscopy has also shown the presence of a very large number of defects in the films.