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Abstract
Abstract Epitaxial layers of silicon have been grown on single crystal quartz by a chemical reaction, the hydrogen reduction of trichlorosilane, at the substrate surface. Glancing angle electron diffraction has been used to determine the orientation dependence, which is {001} silicon parallel to (0001) quartz, and {010} silicon parallel to {1010} quartz. The growth process has been studied using electron microscope techniques, and found to be somewhat similar to that previously observed for vacuum condensed metal films. Transmission electron microscopy has also shown the presence of a very large number of defects in the films.
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