Abstract
This report is primarily a study of the factors which control the vapor transport process of silicon in a modified closed tube low pressure cyclic iodide process. The kinetics of transport from the source to the substrate are examined and are found to agree with a diffusion controlled mechanism. The model is useful for estimating the deposition rate under a variety of conditions. The process is found capable of depositing silicon on silicon substrates at relatively high deposition rates. Impurity doping with this process is accomplished by incorporating the desired impurity into the source silicon.
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