Epitaxial silicon films deposited on foreign substrates by conventional chemical deposition techniques always exhibited structural imperfections due to the lattice mismatch or the occurrence of more than one epitaxial orientation. To improve the structural perfection of these films, a moving deposition-zone technique was used to control the nucleation and growth of silicon films on hexagonal silicon carbide substrates. This technique was found to be capable of promoting the growth of silicon films of a {110} orientation with considerably increased crystal size.