On-chip generation, manipulation and detection of nonclassical states of light are some of the major issues for quantum information technologies. In this context, the maturity and versatility of semiconductor platforms are important assets towards the realization of ultra-compact devices. In this paper we present our work on the design and study of an electrically injected AlGaAs photon pair source working at room temperature. The device is characterized through its performances as a function of temperature and injected current. Finally we discuss the impact of the device’s properties on the generated quantum state. These results are very promising for the demonstration of electrically injected entangled photon sources at room temperature and let us envision the use of III-V semiconductors for a widespread diffusion of quantum communication technologies.
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