In this study, the new method featuring low-temperature and high-pressure hydrogenation (LTHP-H) which is applied to 0.13-μm bipolar-CMOS-DMOS technology is compared with the conventional 400 °C H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> annealing, and the technology without H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> treatment is used as a control group. It is found that the LDMOS processed by the LTHP-H has such following improvements as 11% increase of the on-state performance, which is 3% higher than that of H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> annealing, 61% increase of the interface quality and about 5 to 10 % improvement of the hot carrier degradation (HCD). The method not only lowers the process temperature, but also helps H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> enter the supercritical fluid state to form a large number of free radicals. Therefore, the interface quality is well passivated and Si-H bonds with stable strength are formed, which inhibits the generation of HCD accordingly. With the results of this research, this technology can improve the performance and reliability of LDMOS.