Electron Beam Lithography Research Articles

Terahertz structured deep-subwavelength plasmonic grating metasurface for manipulating polarization-dependent coupling response

The complex electromagnetic anisotropy of terahertz (THz) metasurfaces with geometric symmetry breaking has attracted extensive attention. Typical effects arise from the coupling of polarization responses in orthogonal directions of various components of the metasurface structure, such as the electromagnetically induced transparency (EIT) effect. However, it is a challenge to precisely control or perfectly avoid the polarization-dependent coupling responses. In this work, deep-subwavelength plasmonic gratings (PGs) with a fine wire width of 1 μm at the order of deep subwavelengths of 1/100 THz wave are fabricated by electron beam lithography, and these wire gratings are graphically designed as a C-shaped metasurface pattern with a period of 100 μm in sub-wavelength scale. The complete anisotropic response in the single-oriented PG metasurface is demonstrated by both simulation and experiments, where the polarization-dependent coupling effect is eliminated. More interestingly, the hybrid-oriented PG metasurface exhibits narrowband and wideband EIT effects in the x and y polarization directions with the maximum polarization extinction ratio of 20 dB, respectively, indicating this mechanism can realize more flexible manipulation of polarization-dependent coupling. This patterned deep-subwavelength PG provides a new structure and mechanism for excitation, regulation, and restriction of polarization-dependent mode coupling, and has important applications in THz spectroscopic detection, polarization imaging, and wireless communication.

Viewing zone enlargement method for holographic displays based on the slanted pixel arrangement on a spatial light modulator.

This study proposes a method for enlarging the viewing zone of holographic displays using the slanted arrangement of pixels on a spatial light modulator (SLM). The pixel arrangement equivalently reduces the horizontal pixel pitch, which enlarges the horizontal viewing zone of displays. Computer-generated holograms (CGHs) were calculated using an asymmetric band-limit filter corresponding to the asymmetric bandwidth of the SLM with slanted pixels. The proposed methods were evaluated through an optical reconstruction experiment using static holograms with a pixel size of 1×1µm, fabricated via electron-beam lithography. The enlarged horizontal viewing zone angle was found to be 41.6°.

Uncooled High Detectivity Mid-Infrared Photoconductor Using HgTe Quantum Dots and Nanoantennas.

Using a metal/insulator/metal (MIM) structure with a gold nanoantenna array made by electron beam lithography, the responsivity of a HgTe colloidal quantum dot film is enhanced in the mid-infrared. Simulations indicate that the spatially averaged peak spectral absorption of an 80 nm film is 60%, enhanced 23-fold compared to that of the same film on a bare sapphire substrate. The field intensity enhancement is focused near the antenna tips, being 20-fold 100 nm away, which represents only 1% of the total area and up to 1000-fold at the tips. The simulated polarized absorption spectra are in good agreement with the experiments, with a strong resonance around 4 μm. A responsivity of 0.6 A/W is obtained at a 1 V bias. Noise measurements separate the 1/f noise from the generation-recombination white noise and give a spatially averaged photoconductive gain of 0.3 at 1 V bias. The spatially averaged peak detectivity is improved 15-fold compared to the same film on a sapphire substrate without an MIM structure. The experimental peak detectivity reaches 9 × 109 Jones at 2650 cm-1 and 80 kHz, decreasing at lower frequencies. The MIM structure also enhances the spatially averaged peak photoluminescence of the CQD film by 16-fold, which is a potential Purcell enhancement. The good agreement between simulations and measurements confirms the viability of lithographically designed nanoantenna structures for vastly improving the performance of mid-IR colloidal quantum dot photoconductors. Further improvements will be possible by matching the optically enhanced and current collection areas.

THERMOREGULATION SYSTEM FOR BIOSENSORS BASED ON FIELD-EFFECT TRANSISTORS WITH A NANOWIRE CHANNEL

In this work we present an automatic thermoregulation system for biosensors based on field-effect transistors with a nanowire channel, which provides full control on the required temperature regime in bioanalytical analises. The system elements, including field-effect transistors with a nanowire channel, temperature sensors and heaters, were fabricated on a single silicon cristal using electron beam lithography, reactive ion etching and high-vacuum deposition techniques. Unicue electronics have been developed to control and maintain temperature. The dependence of thermometer readout on heating power was measured, which is in good agreement with the results of numerical simulation. A demonstration of a thermoregulation system with PID-feedback was carried out, ensuring the establishment of a desiered temperature in the range of 30-70◦ C in 18 s in liquid. A demonstration of a thermoregulation system for detecting nucleic acids was carried out using synthetic single-stranded DNA, which is a gene fragment from the bacterium Escherichia coli. The minimal detectable response was observed for a sample with a concentration of 3 fM.

Off-axis bifocal metalens for displacement measurement

Metasurface is a new type of micro-optical element developed in recent years. It can intelligently modulate electromagnetic waves by adjusting the geometrical parameters and arrangement of dielectric structures. In this paper, a bifocal metalens based on modulation of propagation phase was designed for the potential application in displacement measurement. The phase of the bifocal lens is designed by the optical holography-like method, which is verified by the scalar diffraction theory. We designed a square aperture lens with a side length of 200 μm to realize two focal spots with focal lengths of 900 and 1100 μm. The two focal spots aren’t on one optical axis. The polarization insensitive TiO2 cylinders are chosen as structure units. Four structures with different radius were selected to achieve the four phase steps. We fabricated the designed bifocal metalens using electron beam lithography and atomic layer deposition techniques, and measured the light intensity in the areas near the two foci in the direction of the longitudinal axis. The differential signal was calculated, from which we obtained a linear interval. It demonstrates the ability of bifocal differential measurement to be applied to displacement measurement. Because the metasurfaces production process is semiconductor compatible, the bifocal lens is easy to integrate and can be used for miniaturized displacement measurements, micro-resonators, acceleration measurements, and so on.

Study of Spatial Distortion in InP Nanophotonic Membranes on Different Carrier Substrates

Electron Beam Lithography (EBL) metrology and least-square estimation of wafer-scale distortions is used to determine InP membrane deformation as a result of bonding to different substrate materials. First, the accuracy of EBL as a metrology tool for this particular application was assessed. Next, modelling of distortions was tested on unbonded InP wafers as a reference for extracting post-bonding distortions. Then we investigated the effect of substrate material choice on InP membrane deformation after bonding. We found residual expansion factors of 4.53±1, 312.4±1, and 317±1 ppm of the InP membrane bonded to InP, Si, and 3C-SiC carriers, respectively. For the SiO2 carrier, the 3inch InP membrane split into smaller membranes to reduce the stress, highlighting the importance of substrate choice.

Fabrication of slanted gratings by using glancing angle deposition

Slanted gratings, commonly used for manipulating light in various applications, are typically fabricated using conventional top-down methods. However, these methods have limitations on material choice. This paper explores the use of glancing angle deposition (GLAD) to fabricate slanted gratings with various materials and slant angles on silicon (Si) and quartz (SiO2) substrates. The process involves the first step of creating a template using electron beam lithography, lift-off, and dry etching, and the second step of electron beam evaporation at a glancing angle on the prefabricated template. The template consists of grating structures with very shallow trenches. Different materials, such as chromium (Cr), copper (Cu), aluminum oxide (Al2O3), and titanium oxide (TiO2), were used in the GLAD process to create slanted grating structures on Si or SiO2 substrates, showcasing their versatility. Here, the formation of the slanted grating is due to the shadowing effect that leads to deposition onto the protruded grating lines but not into the trench. Using TiO2 as the source material, the GLAD technique can produce slanted gratings with various angles by adjusting the deposition angle. The optical characteristics of the slanted grating prepared using GLAD were verified through simulations with COMSOL software, confirming its excellent light guide performance.

Evaporation of sessile droplets on nanoscale periodic cubic-pillar surface: Experimental investigation

To enhance liquid–vapor phase-change heat transfer, the evaporation of droplets on nanostructured surfaces has been experimentally and numerically investigated. Nevertheless, understanding of how the nanostructured surfaces influence evaporation remains insufficient. In particular, physical models have been unable to predict evaporation characteristics. The present study employs periodic nanostructured surfaces. Electron beam lithography is used to fabricate nanoscale cubic pillars in a periodic configuration on silicon specimens. The pillars are nominally 100 nm in width, height, and gap opening. Water droplets can spread on the nanostructured surface, which shows better wettability than the silicon flat surface. In addition, the contact line of the droplet is effectively pinned on the nanostructured surface. We confirm that the nanostructured surfaces can reduce the lifetime of an evaporating droplet by approximately one-half at maximum. In addition, the nanostructured surfaces induce a unique intermediate evaporation mode between the constant contact radius (CCR) and constant contact angle (CCA) modes, herein referred to as the transition mode. In the transition mode, the contact line slowly recedes, together with the transient change in contact angle, during the evaporation process and the dynamics differ from those in the CCR and CCA modes. A novel phenomenological predictive model is proposed for the nanostructured surface.

High‐Throughput Fabrication of Large‐Scale Metaholograms via One‐step Printing

AbstractMetasurfaces, which are designed by arranging meta‐atoms, have attracted attention for their ability to create optical properties that do not exist in nature. However, previous methods for fabricating metasurfaces using electron‐beam lithography (EBL) are expensive and have limited production capacity, inhibiting mass production. In this study, a new manufacturing method is demonstrated using an argon fluoride (ArF) scanner and nanoimprint lithography (NIL) to overcome these limitations. 266 millimeter‐scale metasurfaces are designed and fabricated on an 8‐inch wafer using an ArF scanner. Subsequently, this is used as a master stamp to replicate the metasurfaces in an 8‐inch wafer scale through the NIL process all at once. To demonstrate the effectiveness of this method, a metahologram is designed and manufactured using TiO2 nanoparticle‐embedded‐resin (nano‐PER). The metahologram achieves an 81.2% yield during replication, with a maximum efficiency of 60.7% at 450 nm, 45.1% at 532 nm, and 38.5% at 635 nm, respectively. The results demonstrate the production of practical metaholograms using low‐cost and high‐throughput processes.

Micro CT Test Pattern for Everyday Productive Use

The rapid evolution of Industrial Computed Tomography (CT) continues to raise the bar for high-resolution, accurate, and precise imaging tools. Developing effective micro CT test patterns is key to meeting these expectations. This study presents XRnanotech's advanced MicroCT test target, engineered using micro- and nano-fabrication technologies, including electron beam lithography. There are several variants; one set features various lines and spaces with dimensions as small as 200 nm and a gold contrast height of 1.5 µm for high contrast. Another set features a contrast height of approximately 4 µm, with the smallest feature sizes of 300 nm and 400 nm, respectively. The paper highlights its performance metrics, ultimately demonstrating how this innovation advances the potential of MicroCT testing.

Nanopatterned Monolayers of Bioinspired, Sequence-Defined Polypeptoid Brushes for Semiconductor/Bio Interfaces.

The ability to control and manipulate semiconductor/bio interfaces is essential to enable biological nanofabrication pathways and bioelectronic devices. Traditional surface functionalization methods, such as self-assembled monolayers (SAMs), provide limited customization for these interfaces. Polymer brushes offer a wider range of chemistries, but choices that maintain compatibility with both lithographic patterning and biological systems are scarce. Here, we developed a class of bioinspired, sequence-defined polymers, i.e., polypeptoids, as tailored polymer brushes for surface modification of semiconductor substrates. Polypeptoids featuring a terminal hydroxyl (-OH) group are designed and synthesized for efficient melt grafting onto the native oxide layer of Si substrates, forming ultrathin (∼1 nm) monolayers. By programming monomer chemistry, our polypeptoid brush platform offers versatile surface modification, including adjustments to surface energy, passivation, preferential biomolecule attachment, and specific biomolecule binding. Importantly, the polypeptoid brush monolayers remain compatible with electron-beam lithographic patterning and retain their chemical characteristics even under harsh lithographic conditions. Electron-beam lithography is used over polypeptoid brushes to generate highly precise, binary nanoscale patterns with localized functionality for the selective immobilization (or passivation) of biomacromolecules, such as DNA origami or streptavidin, onto addressable arrays. This surface modification strategy with bioinspired, sequence-defined polypeptoid brushes enables monomer-level control over surface properties with a large parameter space of monomer chemistry and sequence and therefore is a highly versatile platform to precisely engineer semiconductor/bio interfaces for bioelectronics applications.

Multi-scale alignment to buried atom-scale devices using Kelvin probe force microscopy

Abstract Fabrication of quantum devices by atomic-scale patterning with scanning tunneling microscopy (STM) has led to the development of single/few atom transistors, few-donor/quantum dot devices for spin manipulation, and arrayed few-donor devices for analog quantum simulation. We have developed atomic precision lithography, dopant incorporation, device encapsulation, ex situ device re-location, and contact processes to enable high-yield device fabrication. In this work, we describe a multiscale alignment strategy using Kelvin probe force microscopy to enable the alignment of buried device components to electronic support structures such as source/drain leads, in-plane and top gates, and waveguides while preserving flexibility in the placement of fabricated STM patterns. The required spatial accuracy to bridge the sub-micrometer scale central region of the device to millimeter scale large wire-bond pads is achieved through a multi-step alignment process at various stages of fabrication, including atom-scale device fabrication using STM, re-location and registration, and electron beam lithography for contact leads and pads. This alignment strategy allows imaging small device regions as well as large-scale fiducial marks, thereby bridging the gap from nanometer STM patterns to the millimeter-scale electrical contact fabrication with a 95% yield on more than 150 devices fabricated to date.

Fabrication and sensing properties of a molecularly imprinted polymer on a photonic PDMS substrate for the optical detection of C-reactive protein

This work presents the development of a novel photonic-based sensor on a nanoscale patterned polydimethylsiloxane (PDMS) substrate acting as transducer, combined with a molecularly imprinted polymer for the rapid and sensitive detection of C-reactive protein (CRP). A silicon wafer was patterned using electron-beam lithography with a one-dimensional (1D) reflective grating (periodicity of about 400 nm) and then replicated using nanoimprint lithography. The latter silicon mould was used for replica moulding to generate a patterned PDMS. The unique 1D design gave PDMS photonic properties that were suitable as a substrate to assemble the biorecognition layer. The surface of the photonic PDMS was modified to become hydrophilic and additionally functionalized with vinyl silane groups to bind the imprinted polymer, resulting in a photonic molecularly imprinted polymer substrate (PMIPS). The developed method was successfully used to detect CRP in serum samples. The reflectance intensity decreased with increasing CRP concentrations, and the sensing PMIPS showed a linear response between 0.005 and 1.215 µg mL−1, a limit of detection of 0.003 µg mL−1, and a selective response to CRP when tested against serum calprotectin. Overall, this novel optical sensor can be used to detect CRP, a serum biomarker of inflammation, particularly in inflammatory bowel diseases.

Multiscale Fabrication Process Optimization of DFB Cavities for Organic Laser Diodes.

In the context of the quest for the Organic Laser Diode, we present the multiscale fabrication process optimization of mixed-order distributed-feedback micro-cavities integrated in nanosecond-short electrical pulse-ready organic light-emitting diodes (OLEDs). We combine ultra-short pulsed electrical excitation and laser micro-cavities. This requires the integration of a highly resolved DFB micro-cavity with an OLED stack and with microwave electrodes. In a second challenge, we tune the cavity resonance precisely to the electroluminescence peak of the organic laser gain medium. This requires precise micro-cavity fabrication performed using e-beam lithography to pattern gratings with a precision in the nanometer scale. Optimal DFB micro-cavities are obtained with 300 nm thick hydrogen silsesquioxane negative-tone e-beam resist on 50 nm thin indium tin oxide anode exposed with a charge quantity per area (i.e., dose) of 620 µC/cm2, developed over 40 min in tetramethylammonium hydroxide diluted in water. We show that the integration of the DFB micro-cavity does not hinder the pulsed electrical operability of the device, which exhibits a peak current density as high as 14 kA/cm2.

Development of electron beam lithography technique for large area nano structural color

Plasmonic color is a structural color generated via preferential light absorption and scattering in dielectric nanostructures. In this study, a large plasmonic color image was successfully fabricated by an electron beam lithography (EBL) system. A software program, referred to as P-color in this study, was developed to facilitate the conversion of a desired color bitmap image to a GDS file composed of multiple nano-patterns to realize plasmonic color. The relationship between the color, width, and pitch of the pattern structures was investigated under different area-dose conditions during EBL as basic data for plasmonic color image design. After establishing conversion techniques for both the large-capacity GDS and EBL files, a plasmonic color image sample with a size of 60 mm × 40 mm area (which is difficult to fabricate using a conventional point-type EBL system) was successfully fabricated.

Reduced material loss caused by Electron Beam Lithography in thin-film lithium niobate through post-process annealing

Thin-film lithium niobate (TFLN), characterized by its low optical loss, remarkable optical nonlinearity and electro-optic properties, serves as an outstanding platform for integrated photonics. However, the existing processing techniques introduce potential damage, thereby impeding the development of high-performance optical devices. The specific sources of damage caused by the processing steps remain unclear. In this paper, we demonstrate that the high-energy electron beam utilized in the Electron Beam Lithography (EBL) process introduces material damage and thus significantly increase the optical loss in TFLN. We further illustrate that the introduced damage can be effectively repaired through post-process annealing, enabling the realization of micro-ring resonators with intrinsic Q-factor (Qint) as high as 3.93 × 106 on X-cut TFLN.

Investigation of silicon-on-insulator back-gate nano vacuum channel transistor array

Recent advances in nanofabrication have made it possible to combine planar solid-state devices with vacuum electronics to create planar nano vacuum channel transistors that offer the advantages of cold-field emission and ballistic transmission. However, the current research is mainly limited to the study of a single field emission transistor, which has problems such as low current and poor gate control capability. To solve the above problems, a multitip field emission array is used in this work, and gate modulation is performed by a back-gate structure to fabricate and process a back-gate nano vacuum transistor array. First, we conducted simulation modeling of the back-gate nano vacuum transistor, investigated the impact of its structural parameters on its performance, and obtained the optimal simulation results. Then, structural parameters of the back-gate nano vacuum channel transistor array (BG-NVCTA) are selected based on the simulation results and fabricated by electron beam lithography on the silicon wafer. The experimental results, agreed well with the simulation results, show that the BG-NVCTA device has excellent gate control characteristics and a high current density. Its anode current is greater than 5 μA, and the transconductance is 1.05 μS when the anode voltage is 5 V.

Experimental study on subwavelength focusing optical field detection methods for micro-Fresnel zone plate

In this paper, the detection methods and detection systems for the subwavelength focusing optical field of the micro-Fresnel zone plate (FZP) are experimentally studied. First, a comparison is made between the micro/nanofabrication methods for micro-FZP, namely, focused ion beam (FIB) and electron beam lithography, and the results show that FIB is better suited for the amplitude-type micro-FZP fabrication. Subsequently, the experimental detection devices based on the wide-field microscopy amplification (WFMA) imaging method (indirect detection method) and scanning near-field optical microscopy (direct detection method) are, respectively, constructed for the detection of the subwavelength focusing optical field of micro-FZP. The experimental results are compared and analyzed with theoretical calculation results, indicating that the WFMA method is more suitable for the detection of micro-FZP subwavelength focusing optical field that is not sensitive to radial components. This study provides an experimental reference for the micro/nanofocusing optical field detection of micro/nano-optical components similar to micro-FZP and promotes the practical application of micro-FZP.

Comparative study of the sidewall shape and proximity effect in bilayer electron beam resist systems

The experimental investigation and simulation of electron beam lithography (EBL) for bilayer and trilayer resist systems have been carried out. Important parameters of the EBL process, such as dissolution rate, resolution, absorbed energy, and resist profile in the investigated bilayer resist systems, have been studied and discussed. Various combinations of resist layers with positive electron resist have been proposed to examine the effects of lithographic process parameters on the resist profile. The results of this work are intended for use in multilayer resist systems to produce high-frequency electronics, where the fabrication of a T-shaped gate is one of the most crucial processes.

Towards large scale integration of MoS2/graphene heterostructure with ALD-grown MoS2

In the pursuit of ultrathin and highly sensitive photodetectors, a promising approach involves leveraging the combination of light-sensitive two-dimensional (2D) semiconducting transition-metal dichalcogenides, such as MoS2 and the high electrical conductivity of graphene. Over the past decade, exfoliated 2D materials and electron-beam lithography have been used extensively to demonstrate feasibility on single devices. But for these devices to be used in the real-world systems, it is necessary to demonstrate good device performance similar to lab-based devices with repeatability of the results from device to device and a path to large scale manufacturing. To work in this way, a fabrication process of MoS2/graphene vertical heterostructures with a wafer-scale integration in a CMOS compatible foundry environment is evaluated here. Large-scale atomic layer deposition on 8 inch silicon wafers is used for the growth of MoS2 layers which are then transferred on a 4 inch graphene-based wafer. The MoS2/graphene phototransistors are fabricated collectively, achieving a minimum channel length of 10 μm. The results measured on dozen of devices demonstrate a photoresponsivity of 50 A W−1 and a remarkable sensitivity as low as 10 nW at 660 nm. These results not only compete with lab-based photodetectors made of chemical vapor deposition grown MoS2 layers transferred on graphene, but also pave the way for the large-scale integration of these emerging 2D heterostructures in optoelectronic devices and sensors.