Abstract
The experimental investigation and simulation of electron beam lithography (EBL) for bilayer and trilayer resist systems have been carried out. Important parameters of the EBL process, such as dissolution rate, resolution, absorbed energy, and resist profile in the investigated bilayer resist systems, have been studied and discussed. Various combinations of resist layers with positive electron resist have been proposed to examine the effects of lithographic process parameters on the resist profile. The results of this work are intended for use in multilayer resist systems to produce high-frequency electronics, where the fabrication of a T-shaped gate is one of the most crucial processes.
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