Quantum Electron Transport Research Articles

Transport effects of twist-angle disorder in mesoscopic twisted bilayer graphene.

Magic-angle twisted bilayer graphene is a tunable material with remarkably flat energy bands near the Fermi level, leading to fascinating transport properties and correlated states at low temperatures. However, grown pristine samples of this material tend to break up into landscapes of twist-angle domains, strongly influencing the physical properties of each individual sample. This poses a significant problem to the interpretation and comparison between measurements obtained from different samples. In this work, we study numerically the effects of twist-angle disorder on quantum electron transport in mesoscopic samples of magic-angle twisted bilayer graphene. We find a significant property of twist-angle disorder that distinguishes it from onsite-energy disorder: it leads to an asymmetric broadening of the energy-resolved conductance. The magnitude of the twist-angle variation has a strong effect on conductance, while the number of twist-angle domains is of much lesser significance. We further establish a relationship between the asymmetric broadening and the asymmetric density of states of twisted bilayer graphene at angles smaller than the first magic angle. Our results show that the qualitative differences between the types of disorder in the energy-resolved conductance of twisted bilayer graphene samples can be used to characterize them at temperatures above the critical temperatures of the correlated phases, enabling systematic experimental studies of the effects of the different types of disorders also on the other properties such as the competition of the different types of correlated states appearing at lower temperatures.

High-performance negative differential resistance characteristics in homoepitaxial AlN/GaN double-barrier resonant tunneling diodes

In this work, high-performance negative differential resistance (NDR) characteristics are demonstrated in homoepitaxial AlN/GaN double-barrier resonant tunneling diodes (RTDs). The devices are grown by plasma-assisted MBE on bulk GaN substrates and exhibit robust and repeatable NDR at RT. A high peak current density of 183 kA cm−2 is simultaneously demonstrated with a large peak-to-valley current ratio of 2.07, mainly benefiting from the significantly reduced dislocation density and improved hyper-abrupt heterointerfaces in the active region, which boosts the electron quantum transport in the resonant tunneling cavity. The achievement shows the promising potential to enhance the oscillation frequency and output power of GaN-based RTD oscillators, imperative for next-generation high-power solid-state compact terahertz oscillators application.

Electronic states and quantum transport in bilayer graphene Sierpinski-carpet fractals

Electronic states and quantum transport in bilayer graphene Sierpinski-carpet fractals

Electric-field-controlled electronic structures and quantum transport in monolayer InSe nanoribbons

Electronic structures and quantum transport properties of the monolayer InSe nanoribbons are studied by adopting the tight-binding model in combination with the lattice Green function method. Besides the normal bulk and edge electronic states, a unique electronic state dubbed as edge-surface is found in the InSe nanoribbon with zigzag edge type. In contrast to the zigzag InSe nanoribbon, a singular electronic state termed as bulk-surface is observed along with the normal bulk and edge electronic states in the armchair InSe nanoribbons. Moreover, the band gap, the transversal electron probability distributions in the two sublayers, and the electronic state of the topmost valence subband can be manipulated by adding a perpendicular electric field to the InSe nanoribbon. Further study shows that the charge conductance of the two-terminal monolayer InSe nanoribbons can be switched on or off by varying the electric field strength. In addition, the transport of the bulk electronic state is delicate to even a weak disorder strength, however, that of the edge and edge-surface electronic states shows a strong robustness against to the disorders. These findings may be helpful to understand the electronic characteristics of the InSe nanostructures and broaden their potential applications in two-dimensional nanoelectronic devices as well.

Quantum electronic transport properties of 3d transition metal doped SnO monolayer for spin-thin film transistor

Quantum electronic transport properties of 3d transition metal doped SnO monolayer for spin-thin film transistor

Topological Quantum Transport Characteristic by Three‐band Correlation Mechanism in 2D SnSe

AbstractUnderstanding electron quantum transport and their coupling interactions in 2D matrix is crucial for manipulating and designing more efficient energy conversion devices, especially in the context of spin transport. Here, we systematically calculate the electronic dispersion properties which the synergistic interaction of the three‐band accounted for the topological transport of edge correlated electrons. The helical state protected by the topology appears at the boundary, accompanied by the upward movement (∼0.2 eV) of the helical point caused by the excitation and the loop channel, which the weak braiding effect reveal local strongly correlated interactions between the boundary electrons. In addition, we also introduce spin Hall conductance and Z2 topological invariants to describe the election dispersion of the topological transport. This provides more possibilities for the realization of topological quantum computing application.

Theoretical dissection of the electronic anisotropy and quantum transport of ultrascaled halogenated borophene MOSFETs

Theoretical dissection of the electronic anisotropy and quantum transport of ultrascaled halogenated borophene MOSFETs

Effect of lattice distortion on spin admixture and quantum transport in organic devices with spin–orbit coupling

Abstract With an extended Su–Schrieffer–Heeger model and Green’s function method, the spin–orbit coupling (SOC) effects on spin admixture of electronic states and quantum transport in organic devices are investigated. The role of lattice distortion induced by the strong electron–lattice interaction in organics is clarified in contrast with a uniform chain. The results demonstrate an enhanced SOC effect on the spin admixture of frontier eigenstates by the lattice distortion at a larger SOC, which is explained by the perturbation theory. The quantum transport under the SOC is calculated for both nonmagnetic and ferromagnetic electrodes. A more notable SOC effect on total transmission and current is observed for ferromagnetic electrodes, where spin filtering induced by spin-flipped transmission and suppression of magnetoresistance are obtained. Unlike the spin admixture, a stronger SOC effect on transmission exists for the uniform chain rather than the organic lattices with distortion. The reason is attributed to the modified spin-polarized conducting states in the electrodes by lattice configuration, and hence the spin-flip transmission, instead of the spin admixture of eigenstates. This work is helpful to understand the SOC effect in organic spin valves in the presence of lattice distortion.

Electronic Transport and Quantum Phenomena in Nanowires.

Nanowires are natural one-dimensional channels and offer new opportunities for advanced electronic quantum transport experiments. We review recent progress on the synthesis of nanowires and methods for the fabrication of hybrid semiconductor/superconductor systems. We discuss methods to characterize their electronic properties in the context of possible future applications such as topological and spin qubits. We focus on group III-V (InAs and InSb) and group IV (Ge/Si) semiconductors, since these are the most developed, and give an outlook on other potential materials.

Nanoribbons of large-gap quantum spin Hall insulator: electronic structures and transport properties

Two-dimensional Bi grown on semiconductor substrate, a large-gap quantum spin Hall insulator characterized by a (p x , p y )-orbital hexagonal lattice, has been theoretically proposed and experimentally confirmed. Here, by combining tight-binding modeling with first-principles calculations, we investigate the electronic structures and quantum transport properties of Bi nanoribbons (NRs), focusing on the topological edge states for nanoelectronics. We reveal that band gap emerges due to the quantum confinement, and the gaps size depends crucially on the width and edge shape: for zigzag NRs, the gap decreases monotonically with the increase of width; while for armchair NRs, it can be categorized into three subgroups with band-gap hierarchies of Eg(3p−1)>Eg(3p)>Eg(3p+1) , so that the overall relation is an oscillating dependence dumped by 1/width decay. Quantum transport calculations demonstrate that the conductance is quantized to 2 e2/h , and an applied gate voltage can efficiently regulate the conductance plateau, originating from the interplay between gate voltage and topological gaps. Furthermore, the quantized conductance remains robust against strong disorder, suggesting the unique advantage of topological states for electronic transport. This work not only provides fundamental insights into the electronic properties of topological insulator nanostructures, but also sheds light on the potential applications of exotic states for quantum devices compatible with semiconductor technology.

Interfacial Properties of Anisotropic Monolayer SiAs Transistors

The newly prepared monolayer (ML) SiAs is expected to be a candidate channel material for next-generation nano-electronic devices in virtue of its proper bandgap, high carrier mobility, and anisotropic properties. The interfacial properties in ML SiAs field-effect transistors are comprehensively studied with electrodes (graphene, V2CO2, Au, Ag, and Cu) by using ab initio electronic structure calculations and quantum transport simulation. It is found that ML SiAs forms a weak van der Waals interaction with graphene and V2CO2, while it forms a strong interaction with bulk metals (Au, Ag, and Cu). Although ML SiAs has strong anisotropy, it is not reflected in the contact property. Based on the quantum transport simulation, ML SiAs forms n-type lateral Schottky contact with Au, Ag, and Cu electrodes with the Schottky barrier height (SBH) of 0.28 (0.27), 0.40 (0.47), and 0.45 (0.33) eV along the a (b) direction, respectively, while it forms p-type lateral Schottky contact with a graphene electrode with a SBH of 0.34 (0.28) eV. Fortunately, ML SiAs forms an ideal Ohmic contact with the V2CO2 electrode. This study not only gives a deep understanding of the interfacial properties of ML SiAs with electrodes but also provides a guide for the design of ML SiAs devices.

Quantum transport of charge density wave electrons in layered materials

The charge density wave (CDW) is a condensate that often forms in layered materials. It is known to carry electric current en masse, but the transport mechanism remains poorly understood at the microscopic level. Its quantum nature is revealed by several lines of evidence. Experiments often show lack of CDW displacement when biased just below the threshold for nonlinear transport, indicating the CDW never reaches the critical point for classical depinning. Quantum behavior is also revealed by oscillations of period h/2e in CDW conductance vs. magnetic flux, sometimes accompanied by telegraph-like switching, in TaS3 rings above 77 K. Here we discuss further evidence for quantum CDW electron transport. We find that, for temperatures ranging from 9 to 474 K, CDW current-voltage plots of three trichalcogenide materials agree almost precisely with a modified Zener-tunneling curve and with time-correlated soliton tunneling model simulations. In our model we treat the Schrödinger equation as an emergent classical equation that describes fluidic Josephson-like coupling of paired electrons between evolving topological states. We find that an extension of this ‘classically robust’ quantum picture explains both the h/2e magnetoconductance oscillations and switching behavior in CDW rings. We consider potential applications for thermally robust quantum information processing systems.

Effects of Decapitation, Water-Deficit Stress, and Pot Size on Morpho-Anatomy and Physiology of Pterocarpus indicus

The interacting effects of stem decapitation, water-deficit stress, and pot size on the growth, morpho-anatomical, and physiological traits of Pterocarpus indicus seedlings were analyzed in this study. Changes in root collar diameter (RCD), biomass allocation, number of leaflets (NL), mean leaf area, guard cell size, stomatal aperture size, phloem cap fiber (PCF) thickness, xylem vessel density (XVD), relative leaf water content (RWC), stomatal conductance (gsw), transpiration rate (E), fluorescence quantum yield, transpiration (E), photosynthesis (PN), and electron transport rate (ETR) of decapitated and undecapitated P. indicus seedlings in different pot sizes (small, medium, large) and watering regimes (every 2, 7, and 14 days) were analyzed. The decapitation × water-deficit stress × and pot size interaction did not affect growth and morpho-anatomical variables, but they did on most of the physiological traits. Decapitated seedlings watered every 14 days and planted in medium or large pots have lower gsw, PN, E, and RWC. While the RCD of large-potted and water-stressed (every 14 days) seedlings decreased, allocations to stem and fine roots increased. Moreover, the NL and PCF significantly decreased, while the ETR and XVD significantly increased in decapitated and water-stressed seedlings. Overall, the decapitation-watering interaction caused significant stress to P. indicus seedlings. Keywords: biomass allocations, decapitation, drought stress, multiple stress, xylem vessel density

Tunable ohmic van der Waals-type contacts in monolayer C3N field-effect transistors.

Monolayer (ML) C3N, a novel two-dimensional flat crystalline material with a suitable bandgap and excellent carrier mobility, is a prospective channel material candidate for next-generation field-effect transistors (FETs). The contact properties of ML C3N-metal interfaces based on FETs have been comprehensively investigated with metal electrodes (graphene, Ti2C(OH/F)2, Zr2C(OH/F)2, Au, Ni, Pd, and Pt) by employing ab initio electronic structure calculations and quantum transport simulations. The contact properties of ML C3N are isotropic along the armchair and zigzag directions except for the case of Au. ML C3N establishes vertical van der Waals-type ohmic contacts with all the calculated metals except for Zr2CF2. The ML C3N-graphene, -Zr2CF2, -Ti2CF2, -Pt, -Pd, and -Ni interfaces form p-type lateral ohmic contacts, while the ML C3N-Ti2C(OH)2 and -Zr2C(OH)2 interfaces form n-type lateral ohmic contacts. The ohmic contact polarity can be regulated by changing the functional groups of the 2D MXene electrodes. These results provide theoretical insights into the characteristics of ML C3N-metal interfaces, which are important for choosing suitable electrodes and the design of ML C3N devices.

Non-uniform magnetic fields for single-electron control.

Controlling single-electron states becomes increasingly important due to the wide-ranging advances in electron quantum optics. Single-electron control enables coherent manipulation of individual electrons and the ability to exploit the wave nature of electrons, which offers various opportunities for quantum information processing, sensing, and metrology. Here we explore non-uniform magnetic fields, which offer unique mechanisms for single-electron control. Considering the modeling perspective, conventional electron quantum transport theories are commonly based on gauge-dependent electromagnetic potentials. A direct formulation in terms of intuitive electromagnetic fields is thus not possible. In an effort to rectify this, a gauge-invariant formulation of the Wigner equation for general electromagnetic fields has been proposed [M. Nedjalkov et al., Phys. Rev. B, 2019, 99, 014423]. However, the complexity of this equation requires the derivation of a more convenient formulation for linear electromagnetic fields [M. Nedjalkov et al., Phys. Rev. A, 2022, 106, 052213]. This formulation directly includes the classical formulation of the Lorentz force and higher-order terms, depending on the magnetic field gradient, that are negligible for small variations of the magnetic field. In this work, we generalize this equation in order to include a general, non-uniform electric field and a linear, non-uniform magnetic field. The thus obtained formulation has been applied to investigate the capabilities of a linear, non-uniform magnetic field to control single-electron states in terms of trajectory, interference patterns, and dispersion. This has led to the exploration of a new type of transport inside electronic waveguides based on snake trajectories and the possibility of splitting wavepackets to realize edge states.

Ohmic contact in two-dimensional WS2/Hf2CX2 (X = F/OH) and WS2/graphene/Hf2C heterojunctions

Low-resistance Ohmic contacts are the key to improving the performance of electronic devices. By performing ab initio electronic calculations and quantum transport simulations, we systematically investigate the contact types of the original WS2/Hf2C, the functionalized WS2/Hf2CX2 (X = F/OH), and the graphene-doped WS2/graphene/Hf2C heterojunctions. The obtained results suggest that the strong interfacial coupling occurs in the WS2/Hf2C system, leading to the metallization of the WS2 layer. Functionalization of the Hf2C layer can significantly weaken the interlayer interactions. Thus, the semiconductor characteristics of the WS2 layer can be maintained in the WS2/Hf2CX2 (X = F/OH) and WS2/graphene/Hf2C heterojunctions. Stable Ohmic contacts are formed in these heterojunctions. The heights of the vertical electron Schottky barrier are −0.13 eV, −0.43 eV, and −0.12 eV for WS2/Hf2CF2, WS2/Hf2C(OH)2, and WS2/graphene/Hf2C, respectively. Based on these heterojunctions, we construct a two-probe field-effect transistor model and explore its quantum transport properties. In the lateral direction, all systems form n-type Schottky contacts. This investigation provides a basis for the selection of electrode materials based on WS2 devices.

A DFT study of quantum electronic transport properties of InTeCl

A DFT study of quantum electronic transport properties of InTeCl

Isotropic Contact Properties in Monolayer GeAs Field-Effect Transistors

Owing to the tunable bandgap and high thermodynamic stability, anisotropic monolayer (ML) GeAs have arisen as an attractive candidate for electronic and optoelectronic applications. The contact properties of ML GeAs with 2D metal (graphene, Ti2CF2, V2CF2, and Ti3C2O2) and Cu electrodes are explored along two principal axes in field-effect transistors (FET) by employing ab initio electronic structure calculations and quantum transport simulations. Weak van der Waals interactions are found between ML GeAs and the 2D metal electrodes with the band structure of ML GeAs kept the same, while there is a strong interaction between ML GeAs and the Cu metal electrode, resulting in the obvious hybridization of the band structure. Isotropic contact properties are seen along the two principal directions. P-type lateral Schottky contacts are established in ML GeAs FETs with Ti3C2O2, graphene, and Ti2CF2 metals, with a hole Schottky barrier height (SBH) of 0.12 (0.20), 0.15 (0.11), and 0.29 (0.21) eV along the armchair (zigzag) direction, respectively, and an n-type lateral Schottky contact is established with the Cu electrode with an electron SBH of 0.64 (0.57) eV. Surprisingly, ML GeAs forms ideal p-type Ohmic contacts with the V2CF2 electrode. The results provide a theoretical foundation for comprehending the interactions between ML GeAs and metals, as well as for designing high-performance ML GeAs FETs.

Interfacial electronic states and self-formed asymmetric Schottky contacts in polar α-In2Se3/Au contacts

In recent years, the two-dimensional (2D) semiconductor α-In2Se3 has great potential for applications in the fields of electronics and optoelectronics due to its spontaneous iron electrolysis properties. Through ab initio electronic structure calculations and quantum transport simulations, the interface properties and transport properties of α-In2Se3/Au contacts with different polarization directions are studied, and a two-dimensional α-In2Se3 asymmetric metal contact design is proposed. When α-In2Se3 is polarized upward, it forms an n-type Schottky contact with Au. While when α-In2Se3 is polarized downward, it forms a p-type Schottky contact with Au. More importantly, significant rectification effect is found in the asymmetric Au/α-In2Se3/Au field-effect transistor. The carrier transports under positive and negative bias voltages are found to be dominated by thermionic excitation and tunneling, respectively. These findings provide guidance for the further design of 2D α-In2Se3-based transistors.

Spin Transfer Torque and Nonlinear Quantum Electron Transport in Chiral Helimagnets

Spin Transfer Torque and Nonlinear Quantum Electron Transport in Chiral Helimagnets