Ohmic contact in two-dimensional WS2/Hf2CX2 (X = F/OH) and WS2/graphene/Hf2C heterojunctions

Abstract

Low-resistance Ohmic contacts are the key to improving the performance of electronic devices. By performing ab initio electronic calculations and quantum transport simulations, we systematically investigate the contact types of the original WS2/Hf2C, the functionalized WS2/Hf2CX2 (X = F/OH), and the graphene-doped WS2/graphene/Hf2C heterojunctions. The obtained results suggest that the strong interfacial coupling occurs in the WS2/Hf2C system, leading to the metallization of the WS2 layer. Functionalization of the Hf2C layer can significantly weaken the interlayer interactions. Thus, the semiconductor characteristics of the WS2 layer can be maintained in the WS2/Hf2CX2 (X = F/OH) and WS2/graphene/Hf2C heterojunctions. Stable Ohmic contacts are formed in these heterojunctions. The heights of the vertical electron Schottky barrier are −0.13 eV, −0.43 eV, and −0.12 eV for WS2/Hf2CF2, WS2/Hf2C(OH)2, and WS2/graphene/Hf2C, respectively. Based on these heterojunctions, we construct a two-probe field-effect transistor model and explore its quantum transport properties. In the lateral direction, all systems form n-type Schottky contacts. This investigation provides a basis for the selection of electrode materials based on WS2 devices.