Electron Beam Evaporation Research Articles

Thermal shock behavior of novel (Yb0.1Gd0.9)2Zr2O7 thermal barrier coatings with a Cr modified (Ni, Pt)Al bond coat

The durability of thermal barrier coatings (TBCs) is significantly influenced both by the ceramic top coat and the bond coat. In this study, novel YbGdZrO ceramic coats were deposited on the surfaces of three types of Cr-modified (Ni, Pt)Al bond coats via electron beam physical vapor deposition (EB-PVD) technique. These Cr-modified (Ni, Pt)Al bond coats were fabricated by magnetic sputtering Cr onto the (Ni, Pt)Al bond coats with varying sputtering times of 30, 60, and 90 min. The results indicates that the thickness of the Cr-modified layer increases with the extension of sputtering time. A short deposition time of 30 min is adequate for achieving an appropriate Cr content in the (Ni, Pt)Al bond coats, which ensures selective oxidation of Al element within the bond coat and further enhances the metallurgical interfacial bonding strength with the ceramic coat by adapting to the concentration gradient diffusion. However, as the sputtering time is extended to 60 and 90 min, α-Cr begins to form in the Cr-modified (Ni, Pt)Al bond coats, which negatively affects the oxidation resistance of the bond coat. Consequently, the thermal shock life of the TBCs samples is significantly reduced with increasing sputtering time. The longest thermal shock lifetime is obtained on the bond coat with Cr plating time of 30 min owing to a differing thermally grown oxide formation and failure mechanism.

Influence of additional intermediate thick Al layers on the reaction propagation and heat flow of Al/Ni reactive multilayers

This study investigates the effects of sputtering and electron beam evaporation (e‐beam) on the microstructure and reactive properties of Al/Ni reactive multilayers (RML). The intermixing zone, a critical factor influencing reaction kinetics, was characterized using high‐resolution transmission electron microscopy and found to be consistently 3 nm for both fabrication methods. Differential scanning calorimetry revealed that e‐beam samples, with thicker Al layers, exhibited slightly higher total molar enthalpy and maintained high reaction temperatures despite reduced reaction velocities in comparison to sputtered samples. X‐ray diffraction confirmed the formation of both Al3Ni2 and AlNi phases in the e‐beam samples. These findings indicate that while thicker bilayer structures reduce reaction velocity, they keep thermal output and mitigate the impact of intermixing zones, leading to similar total molar enthalpy. This analysis underscores the significance of deposition technique and bilayer thickness in optimizing the performance of Al/Ni RML, offering the possibility to establish different phase formations in thicker RML. It advances the control over the reactive properties of reactive multilayers in their applications, for example reactive bonding.This article is protected by copyright. All rights reserved.

Effect of annealing temperature on the structural, optical, morphological, and photocatalytic properties of TiO2 thin films prepared by sol-gel spin-coating and electron beam physical vapor deposition

TiO2 thin films were prepared by sol-gel spin-coating (SGSC) and electron beam-physical vapor deposition (EB-PVD) methods and annealed at different temperatures (Ta ). X-ray diffraction spectroscopy (XRD) results show that the TiO2 films prepared by the SGSC method transformed from the anatase single phase to the coexistence of anatase and rutile with the increase of Ta . However, TiO2 films prepared by the EB-PVD method existed only in the anatase phase, and the crystalline strength was enhanced with the increase of Ta . Meanwhile, particles of TiO2 targets annealed at different Ta showed a rutile phase for TiO2 target particles in the EB-PVD method. The results indicate that the EB-PVD method hinders the nucleation growth and phase transformation of TiO2 films. Scanning electron microscopy and atomic force microscopy also show that the grain size and R ms of TiO2 thin films prepared by the SGSC method increased with the increase of Ta , and the grain size becomes inhomogeneous when the rutile phase is formed. Ultraviolet–visible results show that the forbidden bandwidth and light absorption capacity increase with increasing Ta . For the EB-PVD method, the grain size and surface roughness gradually increased when the Ta of the films was less than 800 °C, while annealing at 800 °C changed the direction of growth and nucleation, and also produced surface cracks; XRD verified the hypothesis that the EB-PVD method hinders the nucleation growth as well as the phase transition of the films. Weak differences in the optical absorption properties and bandgap values of the films also indicate that the EB-PVD method hinders the phase transformation of TiO2 films. Finally, the results of degradation of methylene blue (MB) under simulated visible light showed that the films prepared by the SGSC method gradually improved the photocatalytic performance with the enhancement of the crystalline strength of the anatase phase. The TiO2 films prepared by the EB-PVD method improved the photocatalytic performance with the increase of the active area.

Rate-Dependent Evolution of Microstructure and Stress in Silicon Films Deposited by Electron Beam Evaporation

Rate-Dependent Evolution of Microstructure and Stress in Silicon Films Deposited by Electron Beam Evaporation

Epitaxial Growth of Large-Area Monolayers and van der Waals Heterostructures of Transition-Metal Chalcogenides via Assisted Nucleation.

The transition-metal chalcogenides include some of the most important and ubiquitous families of 2D materials. They host an exceptional variety of electronic and collective states, which can in principle be readily tuned by combining different compounds in van der Waals heterostructures. Achieving this, however, presents a significant materials challenge. The highest quality heterostructures are usually fabricated by stacking layers exfoliated from bulk crystals, which - while producing excellent prototype devices - is time consuming, cannot be easily scaled, and can lead to significant complications for materials stability and contamination. Growth via the ultra-high vacuum deposition technique of molecular-beam epitaxy (MBE) should be a premier route for 2D heterostructure fabrication, but efforts to achieve this are complicated by non-uniform layer coverage, unfavorable growth morphologies, and the presence of significant rotational disorder of the grown epilayer. This work demonstrates a dramatic enhancement in the quality of MBE grown 2D materials by exploiting simultaneous deposition of a sacrificial species from an electron-beam evaporator during the growth. This approach dramatically enhances the nucleation of the desired epi-layer, in turn enabling the synthesis of large-area, uniform monolayers with enhanced quasiparticle lifetimes, and facilitating the growth of epitaxial van der Waals heterostructures.

Composite nanofilms of graphene and nickel: Fabrication, cw linear and nonlinear optical properties

In this study, the preparation of graphene-nickel composite nanofilms and their linear and linear optical properties under cw regime were investigated. The films were fabricated on glass and c-Si substrates in two steps by electron beam evaporation. The surface morphology of the films showed distinctive features with smooth and rough regions related to the formation of pristine and wrinkled graphene. The complex permittivity functions of the films were calculated using Maxwell-Garnett Theory. The nonlinear optical absorption coefficient and refractive index were calculated based on the open and closed aperture z-scan measurements. Enhanced nonlinear optical properties compared to the pure nickel film were obtained. The enhancement is explained in terms of the participation of the graphene’s π-electrons in the d-band plasmonic oscillation.

Enhanced optical properties of BiVO4 photoanode with subwavelength moth-eye structure fabricated via e-beam evaporation and direct printing

Photoelectrochemical (PEC) water splitting, which harnesses solar radiation (an infinite energy source) for clean hydrogen production without carbon-dioxide emissions, is an ideal eco-friendly energy technology. The core reactions in PEC water splitting, involving the oxidation and reduction of water, are driven by electron–hole pairs generated through solar energy absorption. Consequently, the light-absorption efficiency emerges as a critical parameter in PEC devices. Conventional thin-film-type photoanodes, however, grapple with limited absorption due to their high reflectance, hindering absorption and carrier separation efficiency. Conversely, moth-eye-structured photoanodes exhibit an anti-reflection effect stemming from their subwavelength structure, markedly enhancing light-absorption efficiency. In this study, we present the design and fabrication of a densely packed moth-eye-structured bismuth vanadate (BiVO4) (M-BVO) photoanode, which is engineered to possess superior light absorption properties. The photoanode was fabricated via direct printing, electron-beam evaporation, and Vanadium calcination processes. The light absorption of the resulting M-BVO photoanode increased to approximately 92 % within the 300–500 nm wavelength range, with the absorption efficiency (ηabs) surging to 82.9 %. This represents a 23.5 % enhancement compared to its flat BiVO4 counterparts. Impressively, the photocurrent density of M-BVO reached 2.98 mA cm−2 at 1.23 VRHE, 37.6 % higher than that of flat BiVO4. These results indicate that the PEC efficiency can be significantly increased through moth-eye structuring, emphasizing the indispensable role of nanostructure research in the manufacture of high-efficiency photoanodes.

Assessing the Aging Effect on Ti/Au Bilayers for Transition-Edge Sensor (TES) Detectors.

Transition-edge sensor (TES) microcalorimeters are advanced cryogenic detectors that use a superconducting film for particle or photon detection. We are establishing a new production line for TES detectors to serve as cryogenic anticoincidence (i.e., veto) devices. These detectors are made with a superconducting bilayer of titanium (Ti) and gold (Au) thin films deposited via electron beam evaporation in a high vacuum condition on a monocrystalline silicon substrate. In this work, we report on the development of such sensors, aiming to achieve stable sensing performance despite the effects of aging. For this purpose, patterned and non-patterned Ti/Au bilayer samples with varying geometries and thicknesses were fabricated using microfabrication technology. To characterize the detectors, we present and discuss initial results from repeated resistance-temperature (R-T) measurements over time, conducted on different samples, thereby augmenting existing literature data. Additionally, we present a discussion of the sensor's degradation over time due to aging effects and test a potential remedy based on an easy annealing procedure. In our opinion, this work establishes the groundwork for our new TES detector production line.

On‐Chip THz Helical Antenna Based on Metal Self‐Rolled‐up Membrane Nanotechnology

AbstractThis paper demonstrates the on‐chip terahertz (THz) helical antenna based on metal self‐rolled‐up membrane (M‐SRuM) nanotechnology, which utilizes the residual stress in multilayer metal membrane deposited by electron beam (E‐beam) evaporation to provide the rolling force and to form the radiation body of the helical antenna. Precise design method is proposed based on multi‐physics modeling for mechanical and electrical analysis, and the two operating modes of on‐chip helical antenna are modeled and analyzed. The test results show that the normal mode of self‐rolled‐up THz helical antenna is able to operate at frequency as high as 0.223 THz with the corresponding impedance bandwidth of 13 GHz.

Low temperature hydrogen sensor with high sensitivity based on CeOx thin film

In this work, a 500 nm-thick cerium oxide thin film was prepared by electron beam evaporation. It was found that the deposition of 7 nm thick Pd catalyst was required for obtaining a sensor response to hydrogen. The Pd/CeOx sensing structure has a high response of 5000 towards 25 ppm H2 at a working temperature of 200 °C and exhibits a sensor response of 1.3 at temperatures near ambient. Furthermore, the sensing structure exhibited excellent response/recovery kinetics. The results confirm that the CeOx-based materials are a promising material for the fabrication of room-temperature hydrogen sensors.

Ultra‐Inclined Nanocolumnar ZnO Films Sputtered Using a Novel Masking Configuration Providing Controlled and Restricted Oblique Angle Deposition for Enhanced Sensing Platforms

AbstractOblique angle deposition (OAD) of inclined thin films is mainly performed using electron beam evaporation due to its accurate point source control over the incoming evaporated flux angle α, leading to thin films with a nanocolumnar inclination angle β. However, the utilization of magnetron sputtering (MS) with an extended source for OAD is not extensively studied and reported. This work presents a thorough analysis of ZnO inclined thin films deposited by a novel restricted DC‐reactive MS‐OAD technique. OAD‐inclined films are deposited at α ranged 60°‐88°, where incoming flux is restricted using a patented masking configuration enabling tunable control of deposited nanocolumn angular range. The described technique provides accurate control over the resulting β (99.5% reproducibility), allowing demonstrated βmax of 47.3°, close to theoretical limits predicted for ZnO. The approach discussed here probes enhanced control of β comparable to that observed in evaporation, however using an extended source, resulting in high‐quality reproducible nanocolumnar‐inclined films. The mentioned improvements result from the exploration of operational parameters such as magnetron power, working pressure, and chamber temperature, as well as the design of the restricting configuration and substrate holders and their influence on the resulting inclined thin film crystallinity, and morphology.

Investigation of Ge/Sn/Al2O3 multilayer structure for photodetector application

Photodetectors with considerably high performance working in a wide wavelength range extending from UV to IR are essential for technological applications. The present work primarily focuses on the multilayer structure of Ge/Sn/Al2O3 deposited on Si substrate for visible to short wave infrared (SWIR) broadband photodetector applications. The synthesis of a multilayered structure was carried out using electron beam evaporation. Subsequently, these samples were subjected to rapid thermal annealing (RTA). The crystalline nature of films after RTA was examined using X-ray diffraction, and Raman spectroscopy. Afterward, the photodetector measurements were carried out on the fabricated device. The device structure shows better responsivity, external quantum efficiency, detectivity, and noise equivalent power with varying optical power and voltage. The measured responsivity, external quantum efficiency, and detectivity are 1.07 A/W, 125 %, and 2.1 × 109 Jones, respectively. The results indicated the possibility of using the Ge/Sn/Al2O3 multilayered structure as visible to SWIR photodetector.

Tailoring of structural and optical properties of GeOx thin films using 100 MeV Si ions

In the present work, the effects of 100 MeV Si ions on the structural and optical properties of GeOx thin films have been investigated. Thin films of Germanium oxide (GeOx) were deposited onto silicon substrates using electron beam evaporation technique. Subsequently, 100 MeV Si7+ ions were used to irradiate as-deposited films at different fluences ranging from 5 × 1012 to 2 × 1013 ions/cm2. As-deposited films are amorphous as evident from XRD and Raman results. After irradiation with a fluence of 5 × 1012 ions/cm2 the films show partial crystallization. The strong photoluminescence (PL) exhibited from as-deposited and irradiated films is in ultraviolet (UV) and blue region. The blue shift was observed in PL bands after ion beam irradiation. PL band intensity was found to vary with irradiation fluence. The possible mechanism of variation in the PL emission from GeOx thin films with Si ion irradiation has been studied.

Low-thermal-budget electrically active thick polysilicon for CMOS-First MEMS-last integration

Low-thermal-budget, electrically active, and thick polysilicon films are necessary for building a microelectromechanical system (MEMS) on top of a complementary metal oxide semiconductor (CMOS). However, the formation of these polysilicon films is a challenge in this field. Herein, for the first time, the development of in situ phosphorus-doped silicon films deposited under ultrahigh-vacuum conditions (~10−9 Torr) using electron-beam evaporation (UHVEE) is reported. This process results in electrically active, fully crystallized, low-stress, smooth, and thick polysilicon films with low thermal budgets. The crystallographic, mechanical, and electrical properties of phosphorus-doped UHVEE polysilicon films are studied. These films are compared with intrinsic and boron-doped UHVEE silicon films. Raman spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM) and atomic force microscopy (AFM) are used for crystallographic and surface morphological investigations. Wafer curvature, cantilever deflection profile and resonance frequency measurements are employed to study the mechanical properties of the specimens. Moreover, resistivity measurements are conducted to investigate the electrical properties of the films. Highly vertical, high-aspect-ratio micromachining of UHVEE polysilicon has been developed. A comb-drive structure is designed, simulated, fabricated, and characterized as an actuator and inertial sensor comprising 20-μm-thick in situ phosphorus-doped UHVEE films at a temperature less than 500 °C. The results demonstrate for the first time that UHVEE polysilicon uniquely allows the realization of mechanically and electrically functional MEMS devices with low thermal budgets.

Nb2O5 film optical properties and laser-induced damage by phase-change-driven tuning

Niobium oxide (Nb2O5) is widely used in optical and electrical fields because of its high refractive index, wide band gap, high laser-induced damage threshold (LIDT) and high transparency in the ultraviolet to middle-infrared-wavelength range (0.35–7 μm). In this study, Nb2O5 films with different crystalline phases were successfully prepared on BK7 and Si substrates through electron beam evaporation (EB) and post-annealing. Based on the results of X-ray diffraction (XRD) and Raman spectroscopy analysis, the impact of the post-annealing technique on the structure, and optical and physical properties of Nb2O5 films was thoroughly discussed at the molecular level. The crystal phase of an Nb2O5 film and its molecular bonds considerably affect its properties. The Nb2O5(-12 1 2) film prepared in this study exhibited a higher LIDT (17.72 J/cm2) and a higher RMS (0.447 nm) than the corresponding films prepared in previous studies. Following the post-annealing process, the band gap and refractive index of the prepared films were significantly higher than those of the as-deposited film. Thus, this study has significant guiding implications for Nb2O5 film applications and the development costs of the films.

Modeling temperature dependent Ni/β-Ga2O3 Schottky barrier diode interface properties

A TCAD simulator is used to model measured current–voltage characteristics of Ni/β-Ga2O3 Schottky barrier diode (SBD), deposited by E-beam evaporation, at room temperature. A good fit was obtained when the Ni workfunction, Ni/β-Ga2O3 interface traps concentrations and Si-doped β-Ga2O3 surface electron affinity variation were taken into consideration. Temperature dependent J-V characteristics were investigated and a good agreement at low voltage was obtained. However, the simulated current at high voltage (series resistance domain) was higher than measurement while both series resistance (Rs) and on-resistance (Ron) for measurements were higher than their simulations counterparts. In order to overcome this disagreement, the effect of Si-doped β-Ga2O3 surface electron affinity on the SBD at each temperature was studied. This is due to the fact that the electron affinity can be affected by trap levels located above conduction band maximum (CBM) as reported in the literature. The surface electron affinity decreased with increasing temperature because trap levels located above CBM were activated. A better agreement was achieved.

Single atoms and metal nanoclusters anchored to graphene vacancies

Fabricating dispersed single atoms and size-controlled metal nanoclusters remains a difficult challenge due to sintering. Here, we demonstrate that atoms and clusters can be immobilized using atomically clean defect-engineered graphene as the matrix. The graphene is first cleaned of surface contamination with laser heating, after which low-energy Ar irradiation is used to create spatially well-separated vacancies into it. Metal atoms are then evaporated either via thermal or ebeam evaporation onto graphene, where they diffuse until being trapped into a vacancy. The density of embedded structures can be controlled through irradiation dose, and the size of the structures through evaporation time. The resulting structures are confirmed through atomic-resolution scanning transmission electron microscopy and electron energy loss spectroscopy. We demonstrate here incorporation of Al, Ti, Fe, Ag and Au single atoms or nanoclusters, but the method should work equally well for other elements.

Vertical diamond Schottky barrier diodes with curved field plates

Diamond Schottky barrier diodes (SBDs) could theoretically operate at high voltage, high temperature, and high frequency and be potentially used in power electronics. However, the device breaks down prematurely and cannot operate stably at high voltages due to the edge electric field crowding. In this work, a vertical diamond SBD with a curved field plate (CFP) was prepared using a chemical reflow method, inductively coupled plasma etching, and electron-beam evaporation. This structure alleviates the electric field crowding at the edge of the Schottky electrode and results in a breakdown voltage and current density of 380 V and over 3000 A/cm2, respectively. After repetitive measurements, we found that the device can repeatedly breakdown at around 380 V. These results indicate that CFP structure diamond SBDs have great application in high-voltage and high-power electronic devices.

Electrical properties and field emission characteristics of ITO nanorod thin films synthesized by electron beam physical vapor deposition

Electrical properties and field emission characteristics of ITO nanorod thin films synthesized by electron beam physical vapor deposition

Enhancing Adhesion and Reducing Ohmic Contact through Nickel-Silicon Alloy Seed Layer in Electroplating Ni/Cu/Ag.

Due to the lower cost compared to screen-printed silver contacts, the Ni/Cu/Ag contacts formed by plating have been continuously studied as a potential metallization technology for solar cells. To address the adhesion issue of backside grid lines in electroplated n-Tunnel Oxide Passivating Contacts (n-TOPCon) solar cells and reduce ohmic contact, we propose a novel approach of adding a Ni/Si alloy seed layer between the Ni and Si layers. The metal nickel layer is deposited on the backside of the solar cells using electron beam evaporation, and excess nickel is removed by H2SO4:H2O2 etchant under annealing conditions of 300-425 °C to form a seed layer. The adhesion strength increased by more than 0.5 N mm-1 and the contact resistance dropped by 0.5 mΩ cm2 in comparison to the traditional direct plating Ni/Cu/Ag method. This is because the resulting Ni/Si alloy has outstanding electrical conductivity, and the produced Ni/Si alloy has higher adhesion over direct contact between the nickel-silicon interface, as well as enhanced surface roughness. The results showed that at an annealing temperature of 375 °C, the main compound formed was NiSi, with a contact resistance of 1 mΩ cm-2 and a maximum gate line adhesion of 2.7 N mm-1. This method proposes a new technical solution for cost reduction and efficiency improvement of n-TOPCon solar cells.