Abstract
In the present work, an influence of annealing on physical properties of Indium oxide (In2O3) thin films is investigated for H2S gas sensing applications. The In2O3 films of thickness 450 nm are grown employing physical vapor deposition based electron beam evaporation technique followed by annealing at different temperatures viz. 250 °C, 325 °C and 400 °C for 1 h. XRD analysis indicated crystallization of annealed films in cubic phase having (222) predominant reflection where crystallite size of all the In2O3 layers is tuned in range of 17–26 nm. Optical analysis unveiled higher transmittance in ultraviolet and visible regions whereas absorbance of films is fluctuated with thermal annealing. The 2D AFM images of In2O3 films indicated distribution of nano-spherical grains and these In2O3 films also indicated Ohmic nature where resistivity is detected to be enhanced with annealing. Optimized In2O3 films based gas sensors showed gas response of 0.85 and sensor response of 15.38 % towards toxic H2S gas.
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