Abstract
Tuning of structural and electrical properties of indium oxide (In 2O 3) films by means of metal organic chemical vapor deposition is demonstrated. Phase selective growth of rhombohedral In 2O 3(0001) and body-centered cubic In 2O 3(001) polytypes on (0001) sapphire substrates was obtained by adjusting the substrate temperature and trimethylindium flow rate. The specific resistance of the as-grown films can be tuned by about two orders of magnitude by varying the growth conditions.
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