Abstract We theoretically propose a structure that the population inversion between the Landau levels (LLs) of the graphene can be achieved by the electrical injection. This structure may be used for the Landau level-laser and related infrared and terahertz emitters. We mainly study the linewidth of the optical transitions between LLs in graphene due to the electron–acoustic phonon scattering. Within the Huang–Rhysʼs lattice relaxation model, we improve the effective single-phonon mode (ESM) for the acoustic phonon to calculate the linewidth of the optical transition and compare the obtained results with that of in the low and high-temperature limit. We find that the ESM provides a very good approximation for the temperature dependence of linewidth, which covers the dominating features of the low and high-temperature limit.