Abstract
In this work, the dark electrical resistivity, charge carrier density and Hall mobility ofTl2InGaSe4 single crystal have been recorded and analyzed to investigate the dominant scatteringmechanism in the crystal. The data analyses have shown that this crystal exhibits anextrinsic n-type conduction. The temperature-dependent dark electrical resistivity analysisreflected the existence of two energy levels as 0.396 and 0.512 eV, being dominant aboveand below 260 K, respectively. The temperature dependence of the carrier density wasanalyzed by using the single-donor–single-acceptor model. The latter analysis has shownthat the above maintained 0.512 eV energy level is a donor impurity level. Thecompensation ratio for this crystal is determined as 0.96. The Hall mobility ofTl2InGaSe4 is found to be limited by the scattering of electron–acoustic phonon interactions.The calculated theoretical acoustic phonon scattering mobility agrees with theexperimental one under the condition that the acoustic deformation potential is 12.5 eV.
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