Abstract
The authors report the electrical transport properties of an individual degenerately In-doped ZnO (ZnO:In) nanobelts. The room temperature resistivity and electron concentration of the ZnO:In nanobelts are found to be 8.9×10−4 Ω cm and 1.17×1020 cm−3, respectively. The temperature dependent resistivity of the ZnO:In nanobelts agrees well with the Bloch–Grüneisen theory due to the electron-acoustic phonon scattering mechanism. A high failure-current density of 7.4×106 A/cm2 is measured because of the single-crystalline metallic structure.
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