Electrical Transport Measurements Research Articles

Experimental Evidence for a Berry Curvature Quadrupole in an Antiferromagnet

Berry curvature multipoles appearing in topological quantum materials have recently attracted much attention. Their presence can manifest in novel phenomena, such as nonlinear anomalous Hall effects (NLAHE). The notion of Berry curvature multipoles extends our understanding of Berry curvature effects on the material properties. Hence, research on this subject is of fundamental importance and may also enable future applications in energy harvesting and high-frequency technology. It was shown that a Berry curvature dipole can give rise to a second-order NLAHE in materials of low crystalline symmetry. Here, we demonstrate a fundamentally new mechanism for Berry curvature multipoles in antiferromagnets that are supported by the underlying magnetic symmetries. Carrying out electric transport measurements on the kagome antiferromagnet FeSn, we observe a third-order NLAHE, which appears as a transverse voltage response at the third harmonic frequency when a longitudinal ac drive is applied. Interestingly, this NLAHE is strongest at and above room temperature. We combine these measurements with a scaling law analysis, a symmetry analysis, model calculations, first-principle calculations, and magnetic Monte Carlo simulations to show that the observed NLAHE is induced by a Berry curvature quadrupole appearing in the spin-canted state of FeSn. At a practical level, our study establishes NLAHE as a sensitive probe of antiferromagnetic phase transitions in other materials—such as moiré superlattices, two-dimensional van der Waal magnets, and quantum spin liquid candidates, which remain poorly understood to date. More broadly, Berry curvature multipole effects are predicted to exist for 90 magnetic point groups. Hence, our work opens a new research area to study a variety of topological magnetic materials through nonlinear measurement protocols. Published by the American Physical Society 2024

Coexistence of Superconductivity and Antiferromagnetism in Topological Magnet MnBi2Te4 Films.

The interface of two materials can harbor unexpected emergent phenomena. One example is interface-induced superconductivity. In this work, we employ molecular beam epitaxy to grow a series of heterostructures formed by stacking together two nonsuperconducting antiferromagnetic materials, an intrinsic antiferromagnetic topological insulator MnBi2Te4 and an antiferromagnetic iron chalcogenide FeTe. Our electrical transport measurements reveal interface-induced superconductivity in these heterostructures. By performing scanning tunneling microscopy and spectroscopy measurements, we observe a proximity-induced superconducting gap on the top surface of the MnBi2Te4 layer, confirming the coexistence of superconductivity and antiferromagnetism in the MnBi2Te4 layer. Our findings will advance the fundamental inquiries into the topological superconducting phase in hybrid devices and provide a promising platform for the exploration of chiral Majorana physics in MnBi2Te4-based heterostructures.

Inducing a tunable skyrmion-antiskyrmion system through ion beam modification of FeGe films

Skyrmions and antiskyrmions are nanoscale swirling textures of magnetic moments formed by chiral interactions between atomic spins in magnetic noncentrosymmetric materials and multilayer films with broken inversion symmetry. These quasiparticles are of interest for use as information carriers in next-generation, low-energy spintronic applications. To develop skyrmion-based memory and logic, we must understand skyrmion-defect interactions with two main goals—determining how skyrmions navigate intrinsic material defects and determining how to engineer disorder for optimal device operation. Here, we introduce a tunable means of creating a skyrmion-antiskyrmion system by engineering the disorder landscape in FeGe using ion irradiation. Specifically, we irradiate epitaxial B20-phase FeGe films with 2.8 MeV Au4+ ions at varying fluences, inducing amorphous regions within the crystalline matrix. Using low-temperature electrical transport and magnetization measurements, we observe a strong topological Hall effect with a double-peak feature that serves as a signature of skyrmions and antiskyrmions. These results are a step towards the development of information storage devices that use skyrmions and antiskyrmions as storage bits, and our system may serve as a testbed for theoretically predicted phenomena in skyrmion-antiskyrmion crystals.

Superconductivity in breathing kagome-structured C14 Laves phase XOs2(X = Zr, Hf)

Recently, the emergence of superconductivity in kagome metals has generated significant interest due to its interaction with flat bands and topological electronic states, which exhibit a range of unusual quantum characteristics. This study thoroughly investigates largely unexplored breathing kagome structure C14 Laves phase compounds XOs2 (X = Zr, Hf) by XRD, electrical transport, magnetization, and specific heat measurements. Our analyses confirm the presence of the MgZn2-type structure in ZrOs2 and HfOs2 compounds, exhibiting type-II superconductivity with critical temperature ( TC ) values of 2.90(3) K and 2.69(6) K, respectively. Furthermore, specific heat measurements and electron–phonon coupling constants for both compounds indicate weakly coupled fully gapped superconductivity.

Spin‐Orbit Torque Switching of Magnetization in Ultra‐Thick Ferromagnetic Layers

AbstractCurrent‐induced magnetization switching via spin‐orbit torque (SOT) holds great potential for applications in high‐speed and energy‐efficient magnetic memory and logic devices. In the extensively studied heavy metal/ferromagnet (HM/FM) SOT heterostructures, the thickness of the FM layer is typically restricted to a few nanometers or less due to the rapid spin dephasing, making it challenging to implement thermally stable memory cells with high density. In this study, it is demonstrated that this thickness constraint can be significantly alleviated by utilizing an oxide ferromagnet La0.67Sr0.33MnO3 (LSMO). Through electrical transport and magnetic optical measurements, it is found that the SOT can switch the magnetization in Pt/LSMO heterostructures even at an LSMO thickness of 35 nm, which is one order of magnitude larger than that for metallic FMs, such as CoFeB. Furthermore, based on the FM thickness dependence of the switching current and the domain switching type revealed by magnetic optical Kerr effect imaging (MOKE), a possible picture is proposed to describe the SOT switching in Pt/LSMO, which highlights the critical role of the domain wall propagation in the vertical direction. The work provides valuable insights into the behavior of SOT switching in ultra‐thick FM films, offering new possibilities for their practical applications.

Two-fold symmetry of the in-plane resistance in kagome superconductor Cs(V1–xTax)3Sb5 with enhanced superconductivity

Abstract The kagome superconductor CsV3Sb5 has attracted widespread attention due to its rich correlated electron states including superconductivity, charge density wave (CDW), nematicity, and pair density wave. Notably, the modulation of the intertwined electron orders by the chemical doping is significant to illuminate the cooperation/competition between multiple phases in kagome superconductors. In this study, we have synthesized a series of tantalum-substituted Cs(V1-x Ta x )3Sb5 by a modified self-flux method. Electrical transport measurements reveal that CDW is suppressed gradually and becomes undetectable as the doping content of x over 0.07. Concurrently, the superconductivity is enhanced monotonically from T c ~ 2.8 K at x = 0.00 to 5.2 K at x = 0.12. Intriguingly, in the absence of CDW, Cs(V1-x Ta x )3Sb5 (x = 0.12) crystals exhibit a pronounced twofold symmetry of the in-plane angular-dependent magnetoresistance (AMR) in the superconducting state, indicating the anisotropic superconducting properties in the Cs(V1-x Ta x )3Sb5. Our findings demonstrate that Cs(V1-x Ta x )3Sb5 with the non-trivial band topology is an excellent platform to explore the superconductivity mechanism and intertwined electronic orders in quantum materials.

Study of vortex glass-liquid transition and superconducting properties of single-crystalline boron-doped FeSe0.5Te0.5

We report on the superconducting transport properties of B-doped FeSe0.5Te0.5 single crystals grown by the self-flux method. The structure and superconductivity of these samples were carefully analyzed using X-ray diffraction, scanning electron microscopy, and electrical transport measurements. The crystal structure owns the same tetragonal symmetry as PbO. The B-doped samples show a more significant electronic anisotropy in the superconducting state. Microstructural analysis shows that B-doping of FeSe0.5Te0.5 increases the Fe content in the single crystal samples. B-doping decreases Tc slightly, resulting in lower irreversibility lines. This work revealed the physical effects of B-doping in FeSe0.5Te0.5 superconductors and inspired a way to regulate the superconductivity through elemental manipulation.

Multifunctional features of rare-earth based perovskite-like ferrocobaltite Eu(Fe0.5Co0.5)O3

Currently, the search for new materials that allow the electronic manipulation of spin for the transport of both electric charge and spin has intensified, since their applications in spintronic devices depend on this adjustment. The aim of this work is the analysis of the crystallographic properties and their correlation with the semiconducting ferromagnetic response of the compound Eu(Fe0.5Co0.5)O3 synthesised by solid reaction. It is observed that this material crystallizes forming an orthorhombic structure (Pnma space group) with disorder in the distribution of Fe and Co ions. Optical evaluation shows a bandgap of 1.15 eV, typical in semiconductors, which is corroborated by electrical transport measurements. Magnetic characterization reveals a predominantly antiferromagnetic behaviour in the low temperature regime, while at high temperatures a soft ferromagnetic response predominates as results of super-exchange interactions between magnetic moments. First-principles electronic structure calculations suggest the occurrence of direct semiconductor-type band gap but of different value for the two orientations spin up and spin down. This result allows inferring the technological applicability of the material in devices based on polarized spin currents.

Superconductivity above 105 K in Nonclathrate Ternary Lanthanum Borohydride below Megabar Pressure.

Hydrides are promising candidates for achieving room-temperature superconductivity, but a formidable challenge remains in reducing the stabilization pressure below a megabar. In this study, we successfully synthesized a ternary lanthanum borohydride by introducing the nonmetallic element B into the La-H system, forming robust B-H covalent bonds that lower the pressure required to stabilize the superconducting phase. Electrical transport measurements confirm the presence of superconductivity with a critical temperature (Tc) of up to 106 K at 90 GPa, as evidenced by zero resistance and Tc shift under an external magnetic field. X-ray diffraction and transport measurements identify the superconducting compound as LaB2H8, a nonclathrate hydride, whose crystal structure remains stable at pressures as low as ∼ half megabar (59 GPa). Stabilizing superconductive stoichiometric LaB2H8 in a submegabar pressure regime marks a substantial advancement in the quest for high-Tc superconductivity in polynary hydrides, bringing us closer to the ambient pressure conditions.

Arrays of nano-high-transition temperature superconductor quantum interference devices

We report the fabrication and testing of arrays of nanoscale superconducting quantum interference devices (SQUIDs) directly written into a thin film of the high-transition temperature superconductor YBa2Cu-3O7−δ with a focused helium ion beam. We compare three array configurations with 400 nm by 400 nm nanoSQUIDs connected in series and parallel and a two-dimensional (2D) combination of both. Our electrical transport measurements show that series arrays of three nanoSQUIDs exhibit modulation voltages greater than 1 mV and that combining the devices in parallel greatly enhances the slope of the voltage–magnetic field characteristic. A 2D array with 3 SQUIDS in series and 7 in parallel exhibited a transfer function of 5.51 mV/mT.

Enhancement of superconductivity and phase diagram of Ta-doped Kagome superconductor CsV3Sb5

Kagome superconductors AV3Sb5 (A = K, Rb, and Cs) have attracted enormous interest due to the coexistence of charge density wave (CDW) order, unconventional superconductivity (SC) and anomalous Hall effect (AHE). In this paper, we reported an intensive investigation on Cs(V1−xTax)3Sb5 single crystals with systematic Ta doping. Ta was confirmed to be doped into V-site in the Kagome layer from both single crystal X-ray diffraction structural refinement and scanning transmission electron microscopy observation. The highest Ta doping level was found to be about 16%, which is more than twice as much as 7% in Nb-doped CsV3Sb5. With the increase of Ta doping, CDW order was gradually suppressed and finally vanished when the doping level reached to more than 8%. Meanwhile, superconductivity was enhanced with a maximum critical temperature (Tc) of 5.3 K, which is the highest Tc in the bulk crystal of this Kagome system at ambient pressure so far. The μ0Hc2(T) behavior demonstrates that the system is still a two-band superconductor after Ta doping. Based on the electrical transport measurement, a phase diagram was set up to exhibit the evolution of CDW and SC in the Cs(V1−xTax)3Sb5 system. These findings pave a new way to search for new superconductors with higher Tc in the AV3Sb5 family and establish a new platform for tuning and controlling the multiple orders and superconducting states.

Electronic inhomogeneity and phase fluctuation in one-unit-cell FeSe films

One-unit-cell FeSe films on SrTiO3 substrates are of great interest owing to significantly enlarged pairing gaps characterized by two coherence peaks at ±10 meV and ±20 meV. In-situ transport measurement is desired to reveal novel properties. Here, we performed in-situ microscale electrical transport and combined scanning tunneling microscopy measurements on continuous one-unit-cell FeSe films with twin boundaries. We observed two spatially coexisting superconducting phases in domains and on boundaries, characterized by distinct superconducting gaps (Δ1\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${\\Delta }_{1}$$\\end{document}~15 meV vs. Δ2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${\\Delta }_{2}$$\\end{document}~10 meV) and pairing temperatures (Tp1~52.0 K vs. Tp2~37.3 K), and correspondingly two-step nonlinear V~Iα\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$V \\sim {I}^{\\alpha }$$\\end{document} behavior but a concurrent Berezinskii–Kosterlitz–Thouless (BKT)-like transition occurring at TBKT\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${T}_{{{{{{\\rm{BKT}}}}}}}$$\\end{document}~28.7 K. Moreover, the onset transition temperature Tconset\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${T}_{{{{{{\\rm{c}}}}}}}^{{{{{{\\rm{onset}}}}}}}$$\\end{document}~54 K and zero-resistivity temperature Tczero\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${T}_{{{{{{\\rm{c}}}}}}}^{{{{{{\\rm{zero}}}}}}}$$\\end{document}~31 K are consistent with Tp1 and TBKT\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${T}_{{{{{{\\rm{BKT}}}}}}}$$\\end{document}, respectively. Our results indicate the broadened superconducting transition in FeSe/SrTiO3 is related to intrinsic electronic inhomogeneity due to distinct two-gap features and phase fluctuations of two-dimensional superconductivity.

Gold-Template-Assisted Mechanical Exfoliation of Large-Area 2D Layers Enables Efficient and Precise Construction of Moiré Superlattices.

Moiré superlattices, consisting of rotationally aligned 2D atomically thin layers, provide a highly novel platform for the study of correlated quantum phenomena. However, reliable and efficient construction of moiré superlattices is challenging because of difficulties to accurately angle-align small exfoliated 2D layers and the need to shun wet-transfer processes. Here, efficient and precise construction of various moiré superlattices is demonstrated by picking up and stacking large-area 2D mono- or few-layer crystals with predetermined crystal axes, made possible by a gold-template-assisted mechanical exfoliation method. The exfoliated 2D layers are semiconductors, superconductors, or magnets and their high quality is confirmed by photoluminescence and Raman spectra and by electrical transport measurements of fabricated field-effect transistors and Hall devices. Twisted homobilayers with angle-twisting accuracy of ≈0.3°, twisted heterobilayers with sub-degree angle-alignment accuracy, and multilayer superlattices are precisely constructed and characterized by their moiré patterns, interlayer excitons, and second harmonic generation. The present study paves the way for exploring emergent phenomena in moiré superlattices.

Effect of Ar pressure on phase transition characteristics and charge transport mechanism in VO2 films grown by RF sputtering of V2O5

In this study, we report the growth and characterization of VO2 films deposited on YSZ (001) substrate employing RF magnetron sputtering of vanadium pentoxide (V2O5) target in pure Ar gas ambient. The VO2 film growth has been carried out at ∼700 °C for ∼15 min at ∼100 W RF power with a flow rate of ∼20 sccm at Ar gas deposition pressure of ∼3, ∼6, ∼20, and ∼40 mTorr. x-ray diffractometry and Raman spectroscopy show that the nearly pure VO2 phase achieved at lower Ar pressure, e.g., ∼3 and ∼6 mTorr transform into a multiphase V-O system at ∼20 and ∼40 mTorr. This pattern is also supported by the electrical transport measurements through the occurrence of hysteretic IMT in films grown at ∼3 and ∼6 mTorr and the absence of this signature in these films deposited at ∼20 and ∼40 mtorr Ar pressure. The most pronounced with the strongest hysteresis is seen in the Y6 film, and therefore, the optimum growth pressure in the present study is ∼6 mTorr. The suppression of IMT in Y20 and Y40 is attributed to the appearance of other V-O phases, which smear out the phase transition. The activation energy of the insulating phase is estimated from the Arrhenius fit to the ρ-T data is found to be ∼0.223 eV at ∼3 mTorr Ar pressure which increases to ∼0.311 eV for ∼6 mTorr film in the cooling cycle. The low temperature (120K≤T≤300K) transport conduction in all VO2 films is governed by Efros-Shklovskii’s variable range hopping (ES-VRH) mechanism with a systematic relation between growth conditions and phase transition characteristics. Thus, Argon gas pressure plays a critical role in growth and brings out the feasibility of VO2 films growth by RF sputtering of oxide V2O5 target under Argon ambient only.

Pressure-induced magnetic phase and structural transition in SmSb2

Abstract Motivated by the recent discovery of unconventional superconductivity around a magnetic quantum critical point in pressurized CeSb2, here we present a high-pressure study of an isostructural antiferromagnetic (AFM) SmSb2 through electrical transport and synchrotron x-ray diffraction measurements. At P C ~2.5 GPa, we found a pressure-induced magnetic phase transition accompanied by a Cmca→P4/nmm structural phase transition. In the pristine AFM phase below P C, the AFM transition temperature of SmSb2 is insensitive to pressure; in the emergent magnetic phase above P C, however, the magnetic critical temperature increases rapidly with increasing pressure. In addition, at ambient pressure, the magnetoresistivity (MR) of SmSb2 increases suddenly upon cooling below the AFM transition temperature and presents linear nonsaturating behavior under high field at 2 K. With increasing pressure above P C, the MR behavior remains similar to that observed at ambient pressure, both in terms of temperature- and field-dependent MR. This leads us to argue an AFM-like state for SmSb2 above P C. Within the investigated pressure of up to 45.3 GPa and the temperature of down to1.8 K, we found no signature of superconductivity in SmSb2.

Ionic liquid composites with garnet-type Li6.75Al0.25La3Zr2O12: Stability, electrical transport, and potential for energy storage applications

Garnet composites with ionic liquid dispersion have been prepared for electrolytic applications. Various ionic liquids (ILs) in small amounts were added to garnet type Li6.75Al0.25La3Zr2O12 (LALZO) to improve its ionic conductivity and electrode-electrolyte interfacial compatibility. The optimal composition having ∼6 wt% EMIM BF4 in LALZO showed a high ionic conductivity of 6 × 10-4 Ω-1cm-1 at room temperature, which is almost two orders of magnitude higher than the pristine garnet pellet. Such a high conductivity is attributed to the alteration of the ionic liquid-garnet interface by a weak non-uniform chemisorption. The thermal stability of the composites was confirmed by high-temperature X-ray diffraction, thermogravimetric analysis, differential scanning calorimetry (DSC), and dynamic electrical transport measurements, which suggested their stability at least up to 200 °C. The electrochemical performance of the composite was evaluated by assembling 2032-type LFP//LALZO-IL//Li cell, which displayed promising candidature for energy storage applications.

Tunable anomalous resistance and large magnetoresistance in HfTe5 by atom doping

The Dirac layered material HfTe5 renews significant interest due to its exotic band structure, leading to abundant transport properties, such as the anomaly resistance peak and its large magnetoresistance. Here, we prepared single crystals HfTe5 and Cr-doped CrxHf1−xTe5 and carried out their electrical transport measurements to explore the underlying physical origin of the anomaly resistance behavior and the large magnetoresistance. An anomalous resistance peak was observed in both intrinsic HfTe5 and the Cr-doped ones. Specifically, the peak temperature in the doped ones experiences an obvious shift from 52 to 34 K as the doping concentration x increases from 0 to 0.15, as well as the magnitude of the peak resistance is significantly enhanced. Furthermore, the magnetoresistance of CrxHf1−xTe5 is reduced by more than one order of magnitude compared with the intrinsic one. The significant reduction in magnetoresistance after Cr doping is attributed to the breaking of the balance between electron and hole carriers, which is confirmed by Kohler's plots. Meanwhile, in the sample where the magnetoresistance was minimized, we observed Shubnikov–de Haas oscillations. These observations illustrate that the large magnetoresistance is primarily contributed by the compensation of electrons and holes rather than the high mobility. Our findings provide valuable insight into how to engineer HfTe5 to achieve large magnetoresistance and its further applications in magnetic sensors and spintronics.

Electronic structure of superconducting VN(111) films

Vanadium nitride (VN) is a transition-metal nitride with remarkable properties that have prompted extensive experimental and theoretical investigations in recent years. However, there is a current paucity of experimental research investigating the temperature-dependent electronic structure of single-crystalline VN. In this study, high-quality VN(111) films were successfully synthesized on α\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\alpha$$\\end{document}-Al2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$_2$$\\end{document}O3\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$_3$$\\end{document}(0001) substrates using magnetron sputtering. The crystal and electronic structures of the VN films were characterized by a combination of high-resolution X-ray diffraction, low-energy electron diffraction, resonant soft X-ray absorption spectroscopy, and ultraviolet photoelectron spectroscopy. The electrical transport measurements indicate that the superconducting critical temperature of the VN films is around 8.1 K. Intriguingly, the temperature-dependent photoelectron spectroscopy measurements demonstrate a weak temperature dependence in the electronic structure of the VN films, which is significant for understanding the ground state of VN compounds.

Variation of magnetic properties with current in ferrimagnetic semiconductor Mn3Si2Te6

Orbital currents play a fundamental role in a wide range of transport phenomena. Recently, the discovery of a novel chiral orbital current state in the ferrimagnetic nodal-line semiconductor Mn3Si2Te6 has attracted significant interest, supported by anomalous I–V characteristics and time-dependent bistable switching. However, the direct experimental verifications, combining electrical transport and magnetic measurement, that detect the variation of the magnetic properties vs the current are still rare. Here, we investigate the transport properties of Mn3Si2Te6 and track the current-induced dynamics of the magnetic moment. Reflective magnetic circular dichroism reveals that significant alterations in Mn3Si2Te6 magnetoresistance in response to an electric field are necessarily coupled with a magnetic phase transition, establishing a rare correlation. Our findings indicate the predominance of magnetic chiral orbital currents in the colossal angular magnetoresistance effect, offering a unique platform for advanced studies in orbital magnetism.

Thermally stable Peltier controlled vacuum chamber for electrical transport measurements.

The design, manufacture, and characterization of an inexpensive, temperature-controlled vacuum chamber with millikelvin stability for electrical transport measurements at and near room temperature is reported. A commercially available Peltier device and a high-precision temperature controller are used to actively heat and cool the sample space. The system was designed to minimize thermal fluctuations in spintronic and semiconductor transport measurements, but the general principle is relevant to a wide range of electrical measurement applications. The main issues overcome are the mounting of a sample with a path of high thermal conductivity through to the Peltier device and the heat sinking of the said Peltier device inside a vacuum. A copper slug is used as the mount for a sample, and a large copper block is used as a thermal feedthrough before a passive heat sink is used to cool this block. The Peltier device provides 20W of heating and cooling power, achieving a maximum range of 30K below and 40K above the ambient temperature. The temperature stability is within 5 mK at all set points with an even better performance above the ambient temperature. A vacuum pressure of 10-8 hPa is achievable. As a demonstration, we present experimental results from current-induced electrical switching of a CuMnAs thin film. Transport measurements with and without the Peltier control emphasize the importance of a constant temperature in these applications. The thermal lag between the sample space measurement and the sample itself is observed through magnetoresistance values measured during a temperature sweep.