Abstract In this work, a 2D analytical model for a Highly Doped Double Pocket Double Gate NCFET (HDDP-DG-NCFET) device has been developed. The framework of the model is derived from the Poisson’s equation, LK equation and solved utilizing appropriate boundary conditions. The developed model is projected for several device variables, including electric field, surface potential and drain current.
Afterward, to verify the model’s accuracy, Sentaurus TCAD has been utilized for device simulation, and a good agreement with 85–95% precision is witnessed. The comprehensive and structured analysis of device is provided by examining variations in dimensions of device, ferroelectric material and oxide materials. The presented analysis shows that, the proposed HDDP-DG-NCFET device has significant potential for low power applications.
Read full abstract