Abstract
This paper proposes a triple-frequency terahertz amplitude modulator that utilizes an I-shaped strip and four U-shaped metal patches within a common metal-substrate configuration. The top metal layer consists of an I-shaped strip and four U-shaped metal patches, while the bottom substrate layer is made of polyimide. Amplitude modulation is achieved through adjusting the plasma frequency of the high-electron-mobility transistors, resulting in a modulation depth of nearly 93% at resonance frequencies of 0.26 and 0.49 THz. At 0.6 THz, the modulation depth reaches 65%, demonstrating excellent performance. Resonance frequencies are determined by electric field and surface current distribution. The triple-frequency terahertz amplitude modulator is applicable in various fields, including terahertz communications and imaging.
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