We have used aluminum indium gallium nitride (AlInGaN) graded layers instead of the conventional combination of three p-type layers i.e., AlGaN final quantum barrier (FQB), AlGaN electron blocking layer (EBL), and top p-AlGaN hole injecting layer to increase the performance of ultraviolet light-emitting diodes (UV LEDs). In this study, the effects of graded quaternary layers (GQLs) on efficiency droop have also been investigated. These GQLs improve the injection of holes into the quantum wells. Our simulated results show that our proposed structure (LED K2) has a high peak efficiency of ∼ 68% and a significantly reduced efficiency droop of ∼41% than LED K1. The radiative recombination rate in the multiquantum wells (MQWs) of LED K2 is improved by ∼90% which can be attributed to enhanced carrier overlap or recombination in the multiquantum wells. The concentration of electrons in the active region of LED K2 is increased by ∼ 56% as compared to LED K1. This is due to the high aluminum (Al) content in GQLs of LED K2 which minimizes the electron leakage.