Effect Of Thermal Annealing Research Articles

Effects of thermal annealing on analog resistive switching behavior in bilayer HfO2/ZnO synaptic devices: the role of ZnO grain boundaries.

The effects of thermal annealing on analog resistive switching behavior in bilayer HfO2/ZnO synaptic devices were investigated. The annealed active ZnO layer between the top Pd electrode and the HfO2 layer exhibited electroforming-free resistive switching. In particular, the switching uniformity, stability, and reliability of the synaptic devices were dramatically improved via thermal annealing at 600 °C atomic force microscopy and X-ray diffraction analyses revealed that active ZnO films demonstrated increased grain size upon annealing from 400 °C to 700 °C, whereas the ZnO film thickness and the annealing of the HfO2 layer in bilayer HfO2/ZnO synaptic devices did not profoundly affect the analog switching behavior. The optimized thermal annealing at 600 °C in bilayer HfO2/ZnO synaptic devices dramatically improved the nonlinearity of long-term potentiation/depression properties, the relative coefficient of variation of the asymmetry distribution σ/μ, and the asymmetry ratio, which approached 1. The results offer valuable insights into the implementation of highly robust synaptic devices in neural networks.

Effects of rapid thermal annealing on deep-level defects and optical properties of n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature

Effects of rapid thermal annealing on deep-level defects and optical properties of n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature

Low-temperature rapid preparation of high-performance indium oxide thin films and transistors based on solution technology

Indium oxide (In<sub>2</sub>O<sub>3</sub>) thin films and thin-film transistors (TFTs) based on the solution process are prepared by pulsed UV-assisted thermal annealing at a low temperature (200 ℃) for 5 min. The effects of pulsed UV-assisted thermal annealing on the surface morphology, chemical structure, and electrical properties of the In<sub>2</sub>O<sub>3</sub> thin films are investigated, and they are compared with those of conventional thermal annealing (300 ℃, 30 min). The experimental results show that the pulsed UV-assisted thermal annealing method can improve the quality of In<sub>2</sub>O<sub>3</sub> thin film and the performance of TFT in a short period. The results of atomic force microscopy and field emission scanning electron microscopy show that the surface of the In<sub>2</sub>O<sub>3</sub> film is denser and flatter than that of the conventional thermally annealed film, and X-ray photoelectron spectroscopy tests show that the pulsed UV-assisted thermal annealing process generates oxygen vacancies, which increases the carrier concentration and improves the electrical conductivity of the In<sub>2</sub>O<sub>3</sub> film. In addition, the effect of pulsed UV-assisted thermal annealing on the electrical characteristics of In<sub>2</sub>O<sub>3</sub> TFTs is investigated in a comparative way. The results show that the electrical characteristics of the device are significantly improved: the subthreshold swing decreases to 0.12 mV/dec, the threshold voltage is 7.4 V, the current switching ratio is as high as 1.29×10<sup>7</sup>, and the field effect mobility is enhanced to 1.27 cm<sup>2</sup>·V<sup>–1</sup>·s<sup>–1</sup>. Therefore, pulsed UV-assisted thermal annealing is a simple and fast annealing method, which can rapidly improve the performances of In<sub>2</sub>O<sub>3</sub> thin film and TFTs, even under low-temperature conditions.

Structure and luminescence properties of EuF3 and SrF2:Eu nanoparticles after microwave plasma annealing in "methane-hydrogen".

Recently, progress has been made in fabricating diamond-based scintillators with integrated rare-earth luminescent particles. These luminescent particles are integrated into the bulk of diamond during their synthesis by chemical vapor deposition (CVD). However, the growth conditions include a chemically aggressive plasma environment and elevated temperatures, which results in the partial degradation of particles and a decrease in the intensity of their luminescence. Here, we investigate the effect of thermal annealing of luminescent EuF3 and SrF2:Eu powders in microwave plasma that simulates the growth conditions of polycrystalline diamond. It was found that silicon substrates act as efficient reducing agents that lead to the partial reduction of trivalent europium to divalent europium. When annealing occurs on a diamond substrate, the reduction processes proceed at a significantly slower rate. The observed luminescence spectra showed both Eu2+ and Eu3+ luminescence bands, which allows for a targeted tuning of the luminescence spectrum of europium in composites and can be used to fabricate detectors and visualizers of X-ray radiation using a visible signal from the desired combination of Eu2±/Eu3± ions. During plasma annealing in pure hydrogen at moderate temperatures (600 °C), an intensive hydrogenation of particles is observed. Such hydrogen plasma treatment of fluorides may be considered a promising route to fabricate hydrides of various metals.

Effect of crystallographic orientation on the potential barrier and conductivity of Bessel written graphitic electrodes in diamond

Ultrafast laser micromachining can be used to promote diamond graphitization, enabling the creation of electrically conductive wires embedded in the diamond matrix. In this context, the presence of a potential barrier in the conductivity of transverse graphitic wires fabricated by pulsed Bessel beams without sample translation across 500 μm thick monocrystalline CVD diamond has been studied. In particular, the role of the crystallographic orientation has been analysed. The morphology and the conductivity of the obtained electrodes have been studied using optical microscopy and current-voltage measurements, while the structural changes have been investigated by means of micro-Raman spectroscopy. By using different laser writing parameters, we have explored the features of different electrodes in a (100) and a (110) oriented diamond crystal respectively. We show that in addition to the use of specific pulse energies and durations (in the fs and ps regimes), the crystallographic orientation of the sample plays an important role in reducing or eliminating the potential barrier height of the IV electrical characterization curves. In a (110) oriented sample, it is possible to eradicate the potential barrier completely even for graphitic wires fabricated at low pulse energy and in the fs pulse duration regime, in contrast to the (100) oriented-crystal case where the barrier is generally observed. The effect of thermal annealing of the diamond samples on the resistivity of the fabricated micro-electrodes has also been investigated. In (110) oriented diamond, resistivities lower than 0.015 Ω cm have been obtained.

Optical, morphological and electrical properties of rapid thermally annealed CoPc/n-Ge heterostructures for photodiode applications

Effect of rapid thermal annealing (RTA) temperature on electrical, morphological and optical properties of cobalt phthalocyanine (CoPc)/n-Ge heterostructures is investigated. UV–Vis measurements of as-deposited and annealed CoPc thin films show the presence of Q band transition at 618 nm and 690 nm absorption wavelength suggesting π-π* transitions. A phase transition is evidenced for the 300 °C annealed CoPc sample. Further, no degradation of Q band intensities is noticed which signifies highly stable CoPc thin films even after annealing at 400 °C. AFM measurements of CoPc thin film on Ge substrate reveal an increased RMS roughness with increased annealing temperature until 200 °C and further roughness was found to be decreased for the sample annealed at 300 °C. A clear change in the morphology of CoPc thin films is observed for the 300 °C annealed sample than 200 °C annealed sample which shows an evidence for the phase transition of CoPc thin films from α-phase to β-phase. This phase transition of CoPc thin films was also confirmed using XRD measurements. FESEM with EDS measurements were carried out for the as-deposited and annealed heterostructures. The surface topography of all the samples reveals a spherical-grained morphology and the grains seem to be highly dispersed in 400 °C annealed CoPc/Ge layers. The electrical and current transport mechanisms of the Au/CoPc/n-Ge heterostructure have been explored at different annealing temperatures by using I–V and C–V characteristics. Notably, the results reveal that superior barrier parameters are observed for the heterostructure annealed at 300 °C than as-deposited heterostructure. Rapid thermal annealing of the Au/CoPc/Ge heterostructure shows its promising applications in the areas of optoelectronic or photoresponsive devices.

Thermal annealing of DC sputtered Nb3Sn and V3Si thin films for superconducting radio-frequency cavities

Nb 3 Sn and V3Si thin films are promising candidates for the next generation of superconducting radio-frequency (SRF) cavities. However, sputtered films often suffer from stoichiometry and strain issues. This exploratory study investigates the structural and chemical effects of thermal annealing, both in−situ and post-sputtering, on DC-sputtered Nb3Sn and V3Si films with varying thicknesses, deposited on Nb or Cu substrates. Building upon our initial studies [Howard et al., Proceedings of the SRF’21, East Lansing, MI (JACoW, 2021), p. 82.], we provide fundamental insights into recrystallization, phase changes, and the issues of stoichiometry and strain. Through annealing at 950 °C, we have successfully enabled the recrystallization of 100 nm thin Nb3Sn films on Nb substrates, yielding stoichiometric and strain-free grains. For 2 μm thick films, elevated annealing temperatures led to the removal of internal strain and a slight increase in grain size. Moreover, annealing enabled a phase transformation from an unstable to a stable structure in V3Si films, while we observed significant Sn loss in 2 μm thick Nb3Sn films after high-temperature annealing. Similarly, annealing films atop Cu substrates resulted in notable Sn and Si loss due to the generation of Cu–Sn and Cu–Si phases, followed by evaporation. These results encourage us to refine our process to obtain high-quality sputtered films for SRF use.

Biochar gasification: Insights from pyrolysis atmospheres and gasification heating rates

Gasification is a promising technology for the synthesis of syngas and hydrogen, with char reactivity being a pivotal factor in the design of industrial gasifiers. Despite extensive studies on the gasification characteristics of biochar, the influence of the pyrolysis atmospheres on the evolution of biochar pore structure and its reactivity in gasification remains poorly understood. This study aims to bridge this gap by comprehensively investigating the effects of char preparation atmospheres (i.e., CO2, H2O, and N2) on ensuring gasification reactivities at varied heating rates. Biochars were synthesized in a horizontal tube furnace at 700 °C with a low heating rate (10 °C min−1) under three different atmospheres: N2, CO2, and H2O. Subsequent gasification reactivities were investigated using i) a thermogravimetric analyzer (TGA) at a low heating rate (10 °C min−1) and ii) a wire mesh reactor (WMR) at a high heating rate (1000 °C s−1), both under CO2 atmosphere at 950 °C. The results showed that the presence of an active atmosphere (CO2 and H2O) during pyrolysis significantly impacts the biochar’s aromaticity, crystalline structure, and surface morphology. The functional group concentration and surface area trends indicated that CO2 and H2O atmospheres during pyrolysis enhance biochar reactivity compared to the N2 atmosphere, with the highest reactivity observed for biochars produced under H2O. Furthermore, biochar gasification reactivity was markedly higher using the WMR compared to TGA, underscoring the pronounced effects of heating rate on gasification behavior. The high heating rate in WMR preserved the biochar’s porous and amorphous structure, whereas the TGA gasification encountered diffusional limitations and thermal annealing effects. These insights underscore the need to consider pyrolysis atmosphere and heating rate in gasification studies, offering a more comprehensive understanding of biochar’s behavior under practical gasification conditions.

Structural and optical properties of Cu implanted Ge thin films

Effects of rapid thermal annealing (RTA) on 100 keV Cu implanted germanium (Ge) thin films were studied in the present report. The Cu ion implantation into Ge films was carried out at different ion fluences 5 × 1015 and 1 × 1016 ions/cm2. Subsequently, the implanted samples were subjected to RTA at 600 °C. XRD and Raman results illustrate the amorphization of implanted films, whereas RTA results in crystallization. Crystallite size increases from 10.5 to 11.6 nm with fluence for RTA-treated samples. The bandgap of pristine film is 0.73 eV, which gets narrowed to 0.59 eV with an increase in ion fluence. RTA leads to increase in band gap up to 1.16 eV due to recovery of lattice damage and recrystallization of films. XPS analysis of RTA-treated implanted films reveals the presence of Ge, Ge suboxides, and Cu. The broad PL emission in the visible region signifies the possible use of Ge for optoelectronic applications.

Effect of solvent and thermal annealing on D18/Y6 polymer solar cells

Organic solar cells (OSCs) as emerging generation solar cells are required to face climate and energy challenges. In this regard, OSCs based on the D18:Y6 active layer with a ratio of 1:1.6 with thermal and solvent annealing as a post-treatment were fabricated. The effect of different thermal annealing with chloroform on the active layer and the cell performance was studied. Optical, morphological and thermal analysis are executed to investigate the effect of thermal with solvent annealing on the D18:Y6 active layer. Photoluminescence (PL), transmission electron microscope (TEM) and atomic force microscope (AFM) reveal that D18:Y6 film treated at 55 °C with chloroform for 5.0 min had the lowest PL intensity, interpenetrating grain networking structures and more smoother surface leads to optimize photo-induced charge transfer and exciton dissociation in the active layer. D18: Y6 blend film annealed at 80 °C with chloroform for 5.0 min exhibits higher roughness of 17.81 nm than 11.60 nm for D18:Y6 blend film treated at 55 °C. As a result, the optimal performance of the fabricated conventional OSCs based on active layer treated at 55 °C with chloroform had short-current density (Jsc), open circuit voltage (Voc), fill factor (FF) and efficiency of 60 mA/cm2, 0.70V, 39.8% and 16.5%, respectively. This study indicates additional thermal annealing with chloroform as a post-treatment enhances the device performance of OSCs.Graphical abstractStudying the effect of solvent vapor annealing with thermal annealing of D18:Y6 layer aspost-treatment on the performance of organic solar cells.

UV irradiation assisted low-temperature process for thin film transistor performance improvement of praseodymium-doped indium zinc oxide

Flexible displays have developed rapidly in recent years, low-temperature process to produce high performance amorphous oxide semiconductor devices are significant for the wide application of low-cost flexible display. In this work, praseodymium-doped indium zinc oxide semiconductor deposited by vacuum sputtering was irradiated with UV light before low-temperature thermal annealing. The treated semiconductor retains its characteristics of amorphous and high transparency to visible light. The carrier concentration and oxygen-related defects of the PrIZO films were significant changed under the superposition of UV irradiation and thermal annealing, the effects of UV light and thermal annealing can be well superimposed. The PrIZO-TFT that have been thermally annealed at 200 °C for 1 h after irradiated by UV light with power density of 175 mW cm−2 for 1800 s exhibit an optimal performance (μ sat of 12.34 cm2 V−1·s−1, I on/I off of 3.8 × 108, V th of 0.7 V, SS of 0.15 V/decade) and stability. The device performance broadens the application prospect of AOS TFT in low-cost flexible display.

Effect of rapid thermal annealing on the charge storage kinetics of conductive N-doped SnO2 thin film anodes for Li-ion batteries

This study focuses on the fabrication of a flexible thin film electrode composed of N-doped tin oxide (SnO2: N). The fabrication process involves sputtering SnO2 onto a Cu foil sheet using radio frequency (RF) magnetron sputtering, conducted under an N2 atmosphere. The deposited thin films are subsequently exposed to annealing treatment using rapid thermal annealing (RTA) at temperatures ranging from 200 to 400 °C. The primary objective of this study is to get an understanding of the effects of N-doping, annealing temperature on the growth of SnO2: N. as well as the influence of film thickness on the crystallographic state. We evaluate their thin-film anode performance for lithium-ion batteries (LIBs). The specific capacity of the as-deposited SnO2 thin films standing at 859 mAh g−1 when measured at 1 mA g−1. This enhanced capacity is attributed to the limited crystal growth in ultrathin SnO2, a factor that effectively combats electrode degradation while simultaneously improving the lithium-ion diffusion coefficient and electron kinetics of the electrode. However, the SnO2: N film that undergoes annealing at 400 °C demonstrates remarkable cyclic retention, reaching 82 %. This improvement is due to the enhanced electrical conductivity resulting from annealing, which prevents the aggregation of tin (Sn) and effectively accommodates the volume changes that occur in prolonged cycles. Additionally, this synchronized approach involving sputtering and RTA is proving to be a simple, efficient, and scalable method. It holds the potential to emerge as a valuable strategy to produce anode materials for lithium-ion batteries.

Influence of Active Afterheater in the Crystal Growth of Gallium Oxide via Edge-Defined Film-Fed Growing Method

In this study, we explored the effect of an active afterheater on the growth of gallium oxide single crystals using the EFG method. We analyzed the temperature distribution of the crystal under the growing process through multiphysics simulations of the models with and without an active afterheater and investigated the morphology of crystals by applying each model to real experimental growths. The afterheater is a component in the growing furnace that activates radiant heat transfer, and its performance depends on its location, size, material, and shape. The simulation results showed that the afterheater applied in this study was found to be effective in obtaining good temperature distribution in the reactor. Through experimental crystal growth corresponding to the simulation approaches, it was confirmed that an appropriate afterheater reduces thermal stress at the growth front and provides a thermal annealing effect on the post-grown crystals during the growing process to improve crystal quality.

Room-Temperature Nitric Oxide Gas Sensors Based on NiO/SnO2 Heterostructures.

Nitric oxide (NO) is a very well-known indoor pollutant, and high concentrations of it in the atmosphere lead to acid rain. Thus, there is great demand for NO sensors that have the ability to work at room temperature. In this work, NiO/SnO2 heterostructures have been prepared via the polyol process and were tested against different concentrations of NO gas at room temperature. The structural and morphological characteristics of the heterostructures were examined using X-ray diffraction and scanning electron microscopy, respectively, while the ratio of NiO to SnO2 was determined through the use of energy-dispersive spectrometry. The effects of both pH and thermal annealing on the morphological, structural and gas-sensing properties of the heterostructure were investigated. It was found that the morphology of the heterostructures consisted of rod-like particles with different sizes, depending on the temperature of thermal annealing. Moreover, NiO/SnO2 heterostructures synthesized with pH = 8 and annealed at 900 °C showed a response of 1.8% towards 2.5 ppm NO at room temperature. The effects of humidity as well as of stability on the gas sensing performance were also investigated.

Investigation of thermal annealing on the characteristics of ScxAl1−xN thin films

Good temperature stability is essential for radio-frequency (RF) devices working at high frequencies. AlN and Sc doped AlN (ScxAl1−xN) are widely used as piezoelectric thin films for their excellent performance, but the temperature characteristics of these two materials could be more precise. In this work, the effect of high-temperature thermal annealing on the characteristics of ScxAl1−xN thin films was investigated. ScxAl1−xN thin films with different Sc compositions were deposited and then annealed in different atmospheres at various temperatures. It was found that ScxAl1−xN thin films could maintain good temperature stability below 900 °C in vacuum or air, and AlN can even maintain up to 1300 °C under vacuum. When the annealing temperature exceeded 900 °C, the films’ crystallinity and lattice would appear to have apparent changes. Moreover, the introduction of oxygen at elevated temperatures could impair the surface morphologies and mechanical properties of the ScxAl1−xN thin films. The results revealed that the increased Sc composition decreased the temperature stability of the ScxAl1−xN thin films, and AlN was proved to have better temperature stability than the other two thin films. This work establishes a research foundation for utilizing ScxAl1−xN thin films in high-temperature applications.

Effect of thermal annealing on the magnetization reversal and spin dynamics in ferrimagnetic TbCo thin films

“Ferrimagnetic rare earth-transition metal alloys are promising materials for high-speed and low-power spintronic device applications due to their wide tunability in magnetic properties as a function of temperature and composition. Here, we report the influence of thermal annealing on the magnetization reversal and spin dynamics of ferrimagnetic Tb10Co90 thin films. We have used the co-sputtering technique for the deposition of two different thicknesses (20 nm and 25 nm) of the TbCo films. Annealing of the samples has been carried out in the vacuum at 350 °C for 1 h. The magnetization reversal and dynamic properties of the as-deposited and annealed films are studied using the magneto-optical Kerr effect and broadband ferromagnetic resonance measurements at room temperature, respectively. The hysteresis loops reveal an anisotropic reversal process. The anisotropy field reduces from 66 Oe to 38 Oe for 20-nm-thick films and 98 Oe to 31 Oe for 25-nm-thick films upon annealing. Consequently, thermal annealing has led to a large reduction (∼70 %) in inhomogeneous linewidth broadening of the ferromagnetic resonance modes. Gilbert damping constant is found to decrease from 0.027 to 0.021 for 20-nm-thick films, whereas it decreases from 0.043 to 0.019 for 25-nm-thick films. The results have been attributed to the enhanced crystallinity of the films as observed in the structural analysis using grazing incidence X-ray diffraction.”

Investigating the Effect of Thermal Annealing and Changing the Concentration of GO in GO/PVA Nanocomposites on Their Structural, Electrical, and Optical Properties

The present research involves producing graphene oxide (GO) using the Hummers method, generating a composite using GO and PVA, and analyzing these composites’ structural and optical characteristics. PVA and GO were used in varied percentages to deal with the issue of how the features of GO/PVA alter depending on concentration. The impact of thermal annealing on the structure and optical characteristics of GO/PVA materials at various concentrations were also investigated. UV-VIS was used to investigate the band gap value of GO/PVA composites. The band gap value changed due to an increase in the concentration of GO in the composites in the PVA and the impact of thermal annealing. The band gap value, specific resistance, and dielectric constant were all found to be well controlled by varying the thermal annealing temperature and the concentration of GO in this case. Differential Scanning Calorimetry (DSC) and thermogravimetric analysis (TGA) were performed on pure PVA and GO/PVA samples in various percentages of GO in order to examine the effect of temperature on the physical properties of (n = 1, 2, 3, 5, 20%) nGO%/PVA nanocomposites. Thermal stability increased as the fraction of GO in the PVA polymer matrix increased.

Thermal-Induced Performance Decay of the State-of-the-Art Polymer: Non-Fullerene Solar Cells and the Method of Suppression.

Improving thermal stability is of great importance for the industrialization of polymer solar cells (PSC). In this paper, we systematically investigated the high-temperature thermal annealing effect on the device performance of the state-of-the-art polymer:non-fullerene (PM6:Y6) solar cells with an inverted structure. Results revealed that the overall performance decay (19% decrease) was mainly due to the fast open-circuit voltage (VOC, 10% decrease) and fill factor (FF, 10% decrease) decays whereas short circuit current (JSC) was relatively stable upon annealing at 150 °C (0.5% decrease). Pre-annealing on the ZnO/PM6:Y6 at 150 °C before the completion of cell fabrication resulted in a 1.7% performance decrease, while annealing on the ZnO/PM6:Y6/MoO3 films led to a 10.5% performance decay, indicating that the degradation at the PM6:Y6/MoO3 interface is the main reason for the overall performance decay. The increased ideality factor and reduced built-in potential confirmed by dark J - V curve analysis further confirmed the increased interfacial charge recombination after thermal annealing. The interaction of PM6:Y6 and MoO3 was proved by UV-Vis absorption and XPS measurements. Such deep chemical doping of PM6:Y6 led to unfavorable band alignment at the interface, which led to increased surface charge recombination and reduced built-in potential of the cells after thermal annealing. Inserting a thin C60 layer between the PM6:Y6 and MoO3 significantly improved the cells' thermal stability, and less than 2% decay was measured for the optimized cell with 3 nm C60.

Mid-wave infrared photoluminescence from low-temperature-grown PbSe epitaxial films on GaAs after rapid thermal annealing

We investigate the beneficial effects of rapid thermal annealing on structure and photoluminescence of PbSe thin films on GaAs (001) grown below 150 °C, with a goal of low temperature integration for infrared optoelectronics. Thin films of PbSe deposited on GaAs by molecular beam epitaxy are epitaxial at these reduced growth temperatures, yet the films are highly defective with a mosaic grain structure with low angle and dendritic boundaries following coalescence. Remarkably, we find that rapid thermal annealing for as short as 180 s at temperatures between 300 and 425 °C in nitrogen ambient leads to extensive re-crystallization and transformation of these grain boundaries. The annealing at the same time dramatically improves the band edge luminescence at 3.7 μm from previously undetectable levels to nearly half as intense as our best conventionally grown PbSe films at 300 °C. We show using an analysis of laser pump-power dependent photoluminescence measurements that this dramatic improvement in the photoluminescence intensity is due to a reduction in the trap-assisted recombination. However, we find it much less correlated with improved structural parameters determined by x-ray diffraction rocking curves, thereby pointing to the importance of eliminating point defects over extended defects. Overall, the success of rapid thermal annealing in improving the luminescent properties of low growth temperature PbSe is a step toward the integration of PbSe infrared optoelectronics in low thermal budget, back end of line compatible fabrication processes.

Effect of Rapid Thermal Annealing on Si-Based Dielectric Films Grown by ICP-CVD.

Silicon nitride, silicon oxide, and silicon oxynitride thin films were deposited on the Si substrate by inductively coupled plasma chemical vapor deposition and annealed at 1100 °C for 3 min in an Ar environment. Silicon nitride and silicon oxide films deposited at ratios of the reactant flow rates of SiH4/N2 = 1.875 and SiH4/N2O = 3, respectively, were Si-rich, while Si excess for the oxynitride film (SiH4/N2/N2O = 3:2:2) was not found. Annealing resulted in a thickness decrease and structural transformation for SiOx and SiNx films. Nanocrystalline phases of Si as well as α- and β-Si3N4 were found in the annealed silicon nitride film. Compared to oxide and nitride films, the oxynitride film is the least susceptible to change during annealing. The relationship between the structure, composition, and optical properties of the Si-based films has been revealed. It has been shown that the calculated optical parameters (refractive index, extinction coefficient) reflect structural peculiarities of the as-deposited and annealed films.