Investigation of thermal annealing on the characteristics of ScxAl1−xN thin films

Abstract

Good temperature stability is essential for radio-frequency (RF) devices working at high frequencies. AlN and Sc doped AlN (ScxAl1−xN) are widely used as piezoelectric thin films for their excellent performance, but the temperature characteristics of these two materials could be more precise. In this work, the effect of high-temperature thermal annealing on the characteristics of ScxAl1−xN thin films was investigated. ScxAl1−xN thin films with different Sc compositions were deposited and then annealed in different atmospheres at various temperatures. It was found that ScxAl1−xN thin films could maintain good temperature stability below 900 °C in vacuum or air, and AlN can even maintain up to 1300 °C under vacuum. When the annealing temperature exceeded 900 °C, the films’ crystallinity and lattice would appear to have apparent changes. Moreover, the introduction of oxygen at elevated temperatures could impair the surface morphologies and mechanical properties of the ScxAl1−xN thin films. The results revealed that the increased Sc composition decreased the temperature stability of the ScxAl1−xN thin films, and AlN was proved to have better temperature stability than the other two thin films. This work establishes a research foundation for utilizing ScxAl1−xN thin films in high-temperature applications.