Field Effect Research Articles

Review of Magnetization Impacts on Vapor Absorption Refrigeration Systems

Amidst the ongoing maintainable energy revolution, reducing energy consumption in vapor absorption refrigeration system (VARS) has become a critical application part. Over the past several decades, extensive research has been devoted to these systems. This study presents a thorough classification and review of the existing literature on magnetized refrigeration systems, specifically focusing on VARS. The paper explores the effects of magnetic fields on fluid flow interactions, categorizing the research into Electro-Hydrodynamics (EHD) and Magneto-Hydrodynamics (MHD). It highlights the distinctive impacts of magnetic fields on the thermophysical properties of electrically conducting fluids. Additionally, the article delves into the fundamental mechanisms behind the influence of magnetization on these properties. The review encompasses experimental studies conducted over the last two decades regarding the effects of magnetization on VARS.

Analytical justification of the thermochemical interaction between blast reagents and carbon-containing products under the influence of magnetic fields

Purpose. To justify and develop a model that describes the effect of magnetic treatment of blast reagents and carbon-containing products on the gasification process for predicting the intensification of gas formation. Methodology. The study involves theoretical modeling based on experimental data to investigate the influence of magnetic fields on the underground coal gasification process and co-gasification of coal and carbon-containing products. The Arrhenius equation was used to estimate the rate constants of gasification reactions in the temperature range of 800–1,000 °C. The effect of the magnetic field was incorporated by adjusting the activation energy (Ea). The results of analytical and experimental studies were processed using methods of computer and mathematical modeling. Findings. The results show that the application of magnetic fields significantly intensifies the gasification process of carbon containing products. Increasing the reactivity of the blast reagents, particularly water and oxygen, leads to a higher overall yield of combustible gases. The use of magnetic fields in the gasification process substantially increases the reaction rate (k) due to the reduction in activation energy (Ea), improving the overall efficiency of gasification. Originality. For the first time, an analytical model has been developed to describe the effect of magnetic treatment of blast reagents and carbon-containing products on the gasification process in the temperature range of 800–1,000 °C. The obtained reaction rates follow an exponential trend. The established and correlation-validated pattern shows the relationship between changes in the approximation coefficient (F ) and the change in the carbon fraction (C, %) during the magnetic treatment of blast components within the specified temperature range. Practical value. The results of this study can be applied to enhance the efficiency of industrial gasification processes, particularly underground coal gasification and co-gasification of coal and carbon-containing productss.

Mapping domain structures near a grain boundary in a lead zirconate titanate ferroelectric film using X-ray nanodiffraction

The effect of an electric field on local domain structure near a 24° tilt grain boundary in a 200 nm-thick Pb(Zr0.2Ti0.8)O3 bi-crystal ferroelectric film was probed using synchrotron nanodiffraction. The bi-crystal film was grown epitaxially on SrRuO3-coated (001) SrTiO3 24° tilt bi-crystal substrates. From the nanodiffraction data, real-space maps of the ferroelectric domain structure around the grain boundary prior to and during application of a 200 kV cm−1 electric field were reconstructed. In the vicinity of the tilt grain boundary, the distributions of densities of c-type tetragonal domains with the c axis aligned with the film normal were calculated on the basis of diffracted intensity ratios of c- and a-type domains and reference powder diffraction data. Diffracted intensity was averaged along the grain boundary, and it was shown that the density of c-type tetragonal domains dropped to ∼50% of that of the bulk of the film over a range ±150 nm from the grain boundary. This work complements previous results acquired by band excitation piezoresponse force microscopy, suggesting that reduced nonlinear piezoelectric response around grain boundaries may be related to the change in domain structure, as well as to the possibility of increased pinning of domain wall motion. The implications of the results and analysis in terms of understanding the role of grain boundaries in affecting the nonlinear piezoelectric and dielectric responses of ferroelectric materials are discussed.

Multi-Electrode Extended Gate Field Effect Transistors Based on Laser-Induced Graphene for the Detection of Vitamin C and SARS-CoV-2.

Despite the clinical data showing the importance of ascorbic acid (AA or vitamin C) in managing viral respiratory infections, biosensors for their simultaneous detection are lacking. To address this need, we developed a portable and wireless device for simultaneous detection of AA and SARS-CoV-2 virus by integrating commercial transistors with printed laser-induced graphene (LIG) as the extended gate. We studied the effect of laser printing pass number and showed that with two laser printing passes (2-pass LIG), the sensor sensitivity and limit of detection (LOD) for AA improved by a factor of 1.6 and 12.8, respectively. Using complementary characterization methods, we attribute the improved response to a balanced interplay of crystallinity, defect density, surface area, surface roughness, pore density and diameter, and mechanical integrity/stability. These factors enhance analyte transport, reduce noise/variability, and ensure consistent sensor performance, making 2-pass LIG the most effective material in this work. Our sensors exhibit promising performance for detecting AA with a selective response in the presence of common salivary interfering molecules, with sensitivity and LOD of 73.67 mV/dec and 54.04 nM in 1× phosphate buffered saline and 81.05 mV/dec and 78.34 nM in artificial saliva, respectively. We also showed that functionalization of the 2-pass LIG gate with S-protein antibody enables the detection of SARS-CoV-2 protein antigens with an ultralow LOD of 52 zg/mL─an improvement of more than 10-fold compared to 1-pass LIG─and 4 particles/mL for virion mimics with a selective response against influenza virus and multiple human coronavirus strains. With low signal drift/hysteresis and wireless capabilities, the developed device holds great potential for improving at-home monitoring and clinical decision-making.

RadicalPy: A Tool for Spin Dynamics Simulations.

Radical pairs (electron-hole pairs, polaron pairs) are transient reaction intermediates that are found and exploited in all areas of science, from the hard realm of physics in the form of organic semiconductors, spintronics, quantum computing, and solar cells to the soft domain of chemistry and biology under the guise of chemical reactions in solution, biomimetic systems, and quantum biology. Quantitative analysis of radical pair phenomena has historically been successful by a few select groups. With this in mind, we present an intuitive open-source framework in the Python programming language that provides classical, semiclassical, and quantum simulation methodologies. A radical pair kinetic rate equation solver, Monte Carlo-based spin dephasing rate estimations, and molecule database functionalities are implemented. We introduce the kine-quantum method, a new approach that amalgamates classical rate equations, semiclassical, and quantum techniques. This method resolves the prohibitively large memory requirement issues of quantum approaches while achieving higher accuracy, and it also offers wavelength-resolved simulations, producing time- and wavelength-resolved magnetic field effect simulations. Model examples illustrate the versatility and ease of use of the software, including the new approach applied to the magnetosensitive absorption and fluorescence of flavin adenine dinucleotide photochemistry, spin-spin interaction estimation from molecular dynamics simulations on radical pairs inside reverse micelles, radical pair anisotropy inside proteins, and triplet exciton pairs in anthracene crystals. The intuitive interface also allows this software to be used as a teaching or learning aid for those interested in the field of spin chemistry. Furthermore, the software aims to be modular and extensible, with the aim to standardize how spin dynamics simulations are performed.

Photoinduced modulation and the effect of CNT loading on field effect transistor characteristics of CNT/ZnO/PVDF composite.

CNT/ZnO/PVDF polymer composite phototransistor is studied for the effect of CNT loading and the photoinduced modulation on its transfer characteristics. XRD study shows that the induced strain in the composite is due to the addition of CNT to the ZnO/PVDF composite. The percentage of β-phase present in PVDF is estimated through Raman spectroscopy and the composite's spectral response is determined by UV-Vis absorbance spectroscopy. From the DC electrical conductivity study it is found that the percolation threshold for the composites is obtained for 0.3 wt% of CNT, and 0.44 wt % of CNT loading makes the composite conductive. On adding 1 wt% of CNT, the electrical conductivity of the ZnO/PVDF composite increases 40 times (~ 0.2 μS/m). The temperature-dependent DC conductivity shows that the conductivity of the composites changes from variable range hopping (VRH) to band conductance upon an increase in CNT loading above the percolation threshold and exhibits a negative temperature coefficient (NTC). Two terminal photoconductivity studies are done to understand the photo enhancement and sensitivity of all the devices. PE hysteresis studies show that the polarization of the composites increases drastically from 0.05 μC/cm2 below the percolation threshold to 10 - 30 μC/cm2 above the percolation threshold of CNT in the composite. To study the effect of interfacial polarization on photoconductivity, the composite is studied in a three-terminal device format using SiO2 as a gate dielectric. A band diagram analysis of the oxide-composite and CNT/ZnO interface is done to understand the mechanism behind the photoinduced field effect on transfer characteristics and the effect of CNT loading. The switching behavior and decay time under UV illumination are studied to understand the effect of CNT loading and photoinduced polarization. The persistent photoconductivity decreases and the charge collection efficiency of the FET increases as the CNT loading increases.

First-Principles Study of Monolayer GeTe and the Effect of External Strain and Electric Field

First-Principles Study of Monolayer GeTe and the Effect of External Strain and Electric Field

Quantification of hemolysis rates from pulsed field ablation

Abstract Introduction Pulsed electric fields induce hemolysis of red blood cells as a dose-dependent effect of the electric field. Voltage pulsations induce a transmembrane potential across the cell membrane and either open up or create pores in the red cells. In isotonic conditions, the pores allow passage of potassium and sodium ions but not sucrose or hemoglobin, and leakage of ions leads to an osmotic imbalance which in turn causes a colloidal hemolysis of the red cells. Objective To quantify hemolysis rates during pulsed field ablation (PFA). Methods We created a computational model of PFA to determine the total volume of blood hemolyzed from each pulse during catheter ablation using pulsed field energy. The percentage hemolysis was calculated as a function of electric field intensity utilizing existing published experimental data. A single electrode delivering a single pulse of 100 microseconds duration was modeled at voltages of 1 kV, 1.5 kV, and 2 kV. Results The total volume of hemolyzed blood per pulse increased with increasing applied voltage (Figure). For 2 electrodes in direct tissue contact, the electrode surface exposed to the blood pool generated 19 microliters of hemolyzed red blood cells with a single pulse of a 2 kV field strength. In the case of a single pulse train consisting of 50 pulses, using a catheter configuration with 20 electrodes, an estimate of total volume per pulse train is approximately 9.5 mL of hemolyzed blood. In the case of electrodes not in direct contact with endocardial tissue, and exposed to the blood pool, up to double this volume could be anticipated per pulse train. Hemolyzed volume can be reduced with better tissue contact (reducing exposure to blood), or potentially with the use of irrigation to dilute the local red blood cell concentration. Increased tonicity of the irrigant fluid may also reduce the osmotic pressure increases that result in hemolysis. Conclusions Typical voltages utilized in pulsed field ablation can cause significant hemolysis, which is exacerbated by inadequate tissue contact. A greater number of electrodes and number of pulses delivered increases the risk, whereas better tissue contact, and the use of irrigation, may reduce it.

A Million Person Study Innovation: Evaluating Cognitive Impairment and other Morbidity Outcomes from Chronic Radiation Exposure Through Linkages with the Centers for Medicaid and Medicare Services Assessment and Claims Data.

The study of One Million U.S. Radiation Workers and Veterans, the Million Person Study (MPS), examines the health consequences, both cancer and non-cancer, of exposure to ionizing radiation received gradually over time. Recently the MPS has focused on mortality patterns from neurological and behavioral conditions, e.g., Parkinson's disease, Alzheimer's disease, dementia, and motor neuron disease such as amyotrophic lateral sclerosis. A fuller picture of radiation-related late effects comes from studying both mortality and the occurrence (incidence) of conditions not leading to death. Accordingly, the MPS is identifying neurocognitive diagnoses from fee-for-service insurance claims from the Centers for Medicare and Medicaid Services (CMS), among Medicare beneficiaries beginning in 1999 (the earliest date claims data are available). Linkages to date have identified ∼540,000 workers with available health information. Such linkages provide individual information on important co-factor and confounding variables such as smoking, alcohol consumption, blood pressure, obesity, diabetes and many other health and demographic characteristics. The total person-level set of time-dependent variables, outcomes, organ-specific dose measures, co-factors, and demographics will be massive and much too large to be evaluated with standard software. Thus, development of specialized open-source software designed for large datasets (Colossus) is nearly complete. The wealth of information available from CMS claims data, coupled with individual dose reconstructions, will thus greatly enhance the quality and precision of health evaluations for this new field of low-dose radiation and neurocognitive effects.

Analysis on density of states and ION/IOFF ratio of GaN/GaN-graphene nanoribbon tunnel FET for enhanced bio-sensing applications

Abstract This research introduces a new analytical model that studies the effect of ferro-dielectric on the operational performance of TFETs doped with halogens. The effect of source and drain depletions, voltage-drain & gate, thickness and capacitance of gate insulator are all investigated in this study. Accurate measurements of the surface potential are required to ascertain the transconductance, gate-to-drain capacitance, and lateral electric field of the device. Our model, which employs Ferroelectric Halo-Doped double gate (FHDD)-gated device designs, has been demonstrated to produce results that nearly match those produced from TCAD simulations. This was accomplished by doing a comparative analysis of the outcomes derived from both sets of simulations. Furthermore, the performance of the suggested structure of TFET, which integrates a dielectric of Fe and GaN heterostructure, surpasses that of other similar devices (fT) in terms of ON current, ON/OFF ratio, transconductance, and cut-off frequency. A ferroelectric dielectric was used to create a ferroelectric heterostructure. This study also centers on the creation and application of a graphene nanoribbon field effect transistor (GNR-TFET) to detect sugar molecules, specifically fructose, xylose, and glucose. The detecting signal is generated by utilizing the fluctuation in the electrical current of the GNR-TFET caused by the presence of individual sugar molecules. The GNR-TFET exhibits noticeable variations in the density of states, transmission spectrum, and current when exposed to individual sugar molecules. The sensor under investigation is being developed and examined using a combination of semi-empirical modeling and non-equilibrium Green's functional theory (SE + NEGF). According to the research, the modified GNR TFET has the ability to quickly and accurately detect individual sugar molecules in real-time.

Nonvolatile logic inverters based on 2D CuInP2S6 ferroelectric field effect transistors

With the capability of in-memory computing, integrated nonvolatile logic devices can mitigate the back-and-forth movement of data between storage and logic units, thus effectively enhancing computational speed and reducing power consumption. In this work, two-dimensional (2D) CuInP2S6, which reveals robust polarization within a few nanometer thicknesses, was utilized as gate dielectric for ferroelectric field effect transistor (FeFET). Device with a ReS2 channel demonstrated a high on/off ratio of current of 105, accompanied by a substantial hysteresis window of 2.8 V. Additionally, ReS2 FETs, gated with an h-BN layer, exhibited a switch ratio of 108 and minimal hysteresis of 61.6 mV at room temperature, attributed to the atomically flat heterointerface with negligible traps. Leveraging the performance of these devices enabled the creation of a nonvolatile logic inverter, wherein the ReS2/h-BN FET acts as the load transistor, and ReS2/h-BN/CIPS FeFET serves as the driving unit. This configuration stably operates with low power consumption of 0.45 μW and outstanding retention exceeding 1000 s. This work presents a viable device architecture for designing nonvolatile logic circuits applicable in in-memory computing.

Continuous monitoring of heart failure biomarker using a sensitive graphene-based electrical sensor

Abstract Heart Failure (HF) is a complex condition that imposes significant burdens on both patients and healthcare systems. The economic impact of HF therapy and management is substantial, underscoring the urgency for proactive measures to mitigate its development. Regular assessments play a pivotal role in identifying individuals at risk and initiating timely interventions to prevent or delay HF progression [1, 2]. NT-proBNP, an amine-terminated form of brain natriuretic peptide, emerges as a promising biomarker in the realm of chronic HF diagnosis, prognosis, and risk assessment [3]. Its utility lies in providing valuable insights into disease progression and prognosis. In recent years, biosensors based on Field Effect Transistors with Graphene (Gr) gate (GFET) have garnered attention for their rapid response, sensitivity, and on-chip integration [4]. Here, we present a sensitive miniaturized GFET sensor for continuous NT-proBNP measurement. The sensor is an array of GFET devices with sensing gates of a monolayer Gr decorated with aptamers as catch probes. Averaging over similar devices in an array approach ensures measurement consistency throughout the experiment. Moreover, the significant challenge posed by the Debye length in FET biosensors is effectively addressed through the functionalization with short folding aptamers [4]. The sensor is built based on a chip comprising an array of 28 individual micro GFETs (Fig. 1a). For the functionalization of Gr gates, we utilized 1-pyrene butyric acid N-hydroxysuccinimide ester as a linker between the aptamer probes and the Gr surface. Subsequently, the Gr surface was incubated with an amine-terminated aptamer solution (Fig. 1c). A schematic diagram of the sensory chip having a droplet of the sample is shown in Fig. 1b. To quantify NT-proBNP levels an 8µL droplet of the buffer solution containing a specific NT-proBNP concentration was deposited onto the sensor. The drain current (IDS) served as the sensor signal for each target concentration (Figs. 2a and 2b). The sensor signal decreased with increasing target concentration, while negligible response was observed when injecting blank buffers. This phenomenon can be attributed to the folding of aptamers upon binding to their target. Also, continuous measurement was conducted at a fixed gate voltage of 0.9V, recording the drain current while the target concentration gradually increased in the sample droplet. This process revealed a decrease in sensor current as we expected (Fig. 2c). The sensor exhibits remarkably low detection limits of 50 pg/mL and a linear range from 100 pg/mL to 10 ng/mL, which are highly conducive for early HF diagnosis and aligning well with reported NT-proBNP levels in patient biofluid [5]. The proposed sensor holds promise as a wearable device for continuous monitoring of high-risk patients. Additionally, this technology shows potential as a detection tool for acute heart failure in hospitalized patients.Sensor viewSensor responses

Investigation of PNN Inverter-Based Low PDP 12T GNRFET Full Adder for VLSI Signal Processing Applications

When an adder circuit, which uses less power and operates at a higher speed, is introduced as a fundamental building block, the multiplier, arithmetic and logic unit (ALU), and digital system’s power delay product (PDP) performance can be easily improved. The graphene nanoribbon field effect transistor (GNRFET) used in very large-scale integrated (VLSI) circuits was developed in the submicron regime and offers superior electrical properties to the MOS transistor. This research paper introduces a full-adder circuit containing twelve GNRFETs (12T GF-FA). Calculations have been made about the introduced 12T GF-FA’s power usage, speed, PDP and leakage power. A few of the existing full adders with 8–32 transistors are compared to the performance of the newly proposed 12T GF-FA in terms of power and delay. For this comparison, some conventional full adders with 8–32 transistors have been implemented using 16[Formula: see text]nm technology GNRFETs. The pull-down network of the suggested adder has two stacked GNRFETs. The proposed adder’s current conduction and power consumption are reduced by the use of stacked transistors. According to the simulation results, the PDP of the suggested 12T GF-FA is 73.2–99% lower when compared to other full adders considered state-of-the-art. Additionally, it has been researched and documented how variations in the PVT and GNRFET parameters affect the performance of full-adder circuits. The proposed adder, with its low PDP, is especially suitable for VLSI signal processing applications. The simulation was carried out using the HSPICE simulation tool and the 16[Formula: see text]nm MOS-GNRFET model.

Improvement of N-type carbon nanotube field effect transistor performance using the combination of yttrium diffusion layer in HfO2 dielectrics and metal contacts.

In this paper, we obtained n-type top-gate carbon nanotube thin film field effect transistors (CNTFET) with source/drain extensions structure through dielectrics optimization strategy, combining the yttrium layer with HfO2 dielectric argon annealing process and metal contacts. The mechanism for enhanced n-type conduction was explained as being due to the vertical diffusion of yttrium to the HfO2 dielectric during argon annealing. This diffusion causes abending of the energy band, which results in more positive fixed charges and a reduction in the electron injection barrier between the low work function source-drain Cr electrode and carbon nanotube. The optimized technology has great prospects for the low cost, large scale and high performance n-type CNTFET to be used in integrated electronic devices.&#xD.

The Effect оf Laser Radiation оn Functional Properties of MOS Structures

The electrophysical properties of instrument MOSFET structures (capacitor, field-effect transistor with an isolated gate and an induced channel, CMOS integrated circuit) when exposed to unmodulated laser radiation are studied. Static and dynamic characteristics were measured. The theoretical study was carried out using the developed SPICE models and numerical experiments. An expression is obtained for the volt-ampere characteristic of a field-effect transistor operating in a mode with constant optical illumination. It is shown that the characteristics of the structures are determined by the generation and recombination of nonequilibrium charge carriers, the field effect, the photovoltaic effect in p—n junctions, the photo-Dember effect and tunneling of charge carriers through a gate dielectric. The results of the work are of interest from the point of view of creating high-speed transistors and integrated circuits of a new type.

Simulation of silicon conical field effect GAA nanotransistors with stack SiO2/HfO2 dielectric of gate

The issues of modeling the electrophysical characteristics of a silicon conical field effect GAA nanotransistor are discussed. An analytical model of the drain current of a transistor with a fully enclosing conical gate with a stack sub-gate oxide SiO2/HfO2 has been developed, taking into account the effect of the charge of the interphase trap at the Si/SiO2 interface. To simulate the potential distribution in a conical working area under the condition of constant trap density, an analytical solution of the Poisson equation was obtained using the method of parabolic approximation in a cylindrical coordinate system with appropriate boundary conditions. The potential model was used to develop an expression for the GAA drain current of a nanotransistor with a stack gate oxide. The key electrophysical characteristics are numerically investigated depending on the density of traps and the thicknesses of SiO2 and HfO2 layers.

Comparative Study of Indium Oxide Films for High‐Mobility TFTs: ALD, PLD and Solution Process

AbstractDeposition of indium oxide base films for high‐mobility thin film transistors (TFTs) has been an important part in the implementation of high‐resolution and high‐frequency display back panels. In this study, three types of In2O3 (InO) films have been fabricated for TFTs using atomic layer deposition (ALD), pulsed laser deposition (PLD), and solution process, respectively. ALD‐derived InO films show controllable grain formation and optimized TFTs show the field effect mobility of ≈100 cm2 V−1s−1 in both the conventional transistor measurements and critical four‐probe measurements, reaching the level of low‐temperature polycrystalline silicon (LTPS). Combined spectroscopy investigations show that the ALD‐derived InO film features advantages as compared to those of the PLD‐deposited and solution‐processed InO film in providing a smoother surface morphology, good crystallinity, and more orderly atomic growth mode. Moreover, the bias‐stress stability of ALD‐derived TFTs can be improved with further passivation.

Effects of magnetic, electric, and non-resonant intense laser fields on exciton binding energy and exciton absorption in a symmetric Gaussian single quantum well

Effects of magnetic, electric, and non-resonant intense laser fields on exciton binding energy and exciton absorption in a symmetric Gaussian single quantum well

Assorted optical solitons of the (1+1)- and (2+1)-dimensional Chiral nonlinear Schrödinger equations using modified extended tanh-function technique

In this research article, the (1+1)- and (2+1)-dimensional Chiral nonlinear Schrödinger equations (CNLSEs) are studied, which play an important role in the development of quantum mechanics, particularly in the field of quantum Hall effect. Our primary goal is to obtain the analytical solutions utilizing novel methodology, particularly the modified extended tanh-function technique. We concentrate on the search to solitary wave solutions inside the (1+1)- and (2+1)-dimensional CNLSEs, which are relevant in domains such as optics, electro-magnetic wave propagation, plasma physics, optics and quantum mechanics. Our objective is to increase knowledge of this equation and give insight into the behavior of solitary waves by employing a novel mathematical technique. This will be accomplished by displaying our findings in 2D and 3D graphics. We believe that our results would pave a way for future research generating optical memories based on the nonlinear solitons.

Electric fields imbue enzyme reactivity by aligning active site fragment orbitals

It is broadly recognized that intramolecular electric fields, produced by the protein scaffold and acting on the active site, facilitate enzymatic catalysis. This field effect can be described by several theoretical models, each of which is intuitive to varying degrees. In this contribution, we show that a fundamental effect of electric fields is to generate electrostatic potentials that facilitate the energetic alignment of reactant frontier orbitals. We apply this model to demystify the impact of electric fields on high-valent iron-oxo heme proteins: catalases, peroxidases, and peroxygenases/monooxygenases. Specifically, we show that this model easily accounts for the observed field-induced changes to the spin distribution within peroxidase active sites and explains the transition between epoxidation and hydroxylation pathways seen in Cytochrome P450 active site models. Thus, for the intuitive interpretation of the chemical effect of the field, the strategy involves analyzing the response of the orbitals of active site fragments, and their energetic alignment. We note that the energy difference between fragment orbitals involved in charge redistribution acts as a measure for the chemical hardness/softness of the reactive complex. This measure, and its sensitivity to electric fields, offers a single parameter model from which to quantitatively assess the effects of electric fields on reactivity and selectivity. Thus, the model provides an additional perspective to describe electrostatic preorganization and offers ways for its manipulation.