Improvement of N-type carbon nanotube field effect transistor performance using the combination of yttrium diffusion layer in HfO2 dielectrics and metal contacts.

Abstract

In this paper, we obtained n-type top-gate carbon nanotube thin film field effect transistors (CNTFET) with source/drain extensions structure through dielectrics optimization strategy, combining the yttrium layer with HfO2 dielectric argon annealing process and metal contacts. The mechanism for enhanced n-type conduction was explained as being due to the vertical diffusion of yttrium to the HfO2 dielectric during argon annealing. This diffusion causes abending of the energy band, which results in more positive fixed charges and a reduction in the electron injection barrier between the low work function source-drain Cr electrode and carbon nanotube. The optimized technology has great prospects for the low cost, large scale and high performance n-type CNTFET to be used in integrated electronic devices.&#xD.