Exposure of intrinsic and lightly doped glow discharge hydrogenated amorphous silicon to white light at an intensity of about 100 mW cm −2 for several hours (light soaking) induces changes in the temperature dependence of the photoconductivity. These changes, which can be reversed by heating to 200 °C, are different for samples with different Fermi levels E F but can in each case be explained by an increase in the density of states in the lower half of the gap. These states are different from the states 1 and 2 previously inferred from the temperature dependence of the photoconductivity. For E F near midgap, no increase in the density of dangling bonds is seen after light soaking. The behavior of slightly n-type samples can be explained by shifts of E F and the resulting changes in occupation of existing dangling bonds. In p-type samples, increased recombination probably occurs through the light-induced states, which are not dangling bonds.