Abstract
ABSTRACTIt has been previously reported that intense illumination on a-Si:H induces luminescence fatigue. The effect of light soaking on the photoconductivity of this material is also known. In this work, studies of photoluminescence (PL) at 10°K shows that the intensity of the main peak at 1.3eV can be correlated with the decrease in the photoconductivity (PC) of the sample. Similar to the PC, the effects of light soaking on the PL spectrum are reversible; annealing at 200°C fully restore the PL spectrum. Our results indicate that the light-induced radiative defects are also involved in the carrier recombination mechanism. By measuring the PL spectrum at temperatures in the range from 10 to 120°K, the activation energy for the non-radiative process has been determined in both light-soaked and heat-dried states.
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