Abstract
Photoluminescence (PL) intensity and luminescence fatigue with illumination time and annealing in a-Si:H have been measured at various temperatures. The results show that the luminescence fatigue is minimum at 150K and there exist at least two kinds of defect or trap at low temperatures, giving rise to opposite light-soaking effect each other. The results are interpreted in terms of the change in band bending caused by optically induced defect or surface states at the native oxide layer of a-Si:H.
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