Effect Of Growth Parameters Research Articles

Importance of sensor-based nitrogen application and effect of growth parameters in wheat crop

An experiment of sensor-based nitrogen application and effect of growth parameters in wheat crop was conducted during the Rabi season of 2022 at the Technology Park, CTAE campus, MPUAT, Udaipur. This study examined the impact of various fertilizer treatments, including a crop sensor-based approach, on wheat crop growth. The results showed that the crop sensor-based treatment demonstrated significant improvements in plant height and tiller density as compared to the 100% Recommended Dose of Fertilizer (RDF) treatment.”

Influence of growth parameters on bacteriocin-like inhibitory substances (BLIS) production by lactic acid bacteria.

This study aimed to investigate the possible production of bacteriocin-like inhibitory substances (BLIS) and optimize it by Lactobacillus sakei and combined Lactobacillus curvatus/Pediococcus acidilactici, lactic acid bacteria used for the meat fermentation. The effect of growth parameters on BLIS production was evaluated by measuring the antibacterial activity of the cell-free supernatant of these bacteria. The stability of the cell-free supernatant of combined L.curvatus/P.acidilactici bacteria was also examined after heat treatment and pH variations. Results showed highest BLIS production by L.curvatus/P.acidilactici was at growth temperatures of 28°C and pH 5, while the optimum condition for production of BLIS by L.sakei was 24°C and pH 6.5. The BLIS production by L. curvatus/P. acidilactici bacteria was greatly influenced by carbon and nitrogen sources. The antimicrobial activity of BLIS in supplemented De Man, Rosa, and Sharpe broth (MRS) was 2044.44 AU/mL, 4.84-fold greater than unsupplemented MRS. None of the carbon sources used in this study affected the BLIS production by the L.sakei, while pea peptone enhanced the antimicrobial activity and showed a value of 188.89 AU/mL, 1.47-fold greater than unsupplemented MRS. The characterization of the cell-free supernatant of L. curvatus/P. acidilactici bacteria showed the heat stability and activity of BLIS at pH 2-10.

(Invited) Vertical GaN Diodes: Effect of Growth Parameters, Indium Surfactants, and Device Development for High-Power Electronics

GaN has achieved widespread interest in high-power and high-speed electronics due to its wide-bandgap (WBG), large breakdown field, and high mobility compared to Si and SiC. There is also continued interest in the growth and development of GaN vertical devices owing to their advantageous properties of high current capability from backside ohmic, better field management, scaling feasibility, and enhanced thermal transport, which is not feasible with the lateral device topology. To realize the predicted high breakdown voltage and low on-resistance from vertical devices, high-quality drift layers with low unintentional doping and low compensating defects are fundamentally required. Hence, our research aims to pursue a comprehensive investigation of growth and device development with vertical GaN structures, building from the optimization of thick GaN homoepitaxy with high growth rate but low impurities, improving surface morphology using Indium as a surfactant as well as realizing punch-through field-plate p-n diodes to maximize the average electric field in high-voltage operation.Toward the goal of high-quality GaN epitaxy growth, we performed systematic studies of growth rate effects on the drift layer doping using ammonia molecular beam epitaxy (NH3 MBE) and plasma-assisted molecular beam epitaxy (PA MBE) [1]. The NH3 MBE homoepitaxy GaN demonstrated an unintentional doping (UID) of ~1015 cm-3, significantly lower than that of the conventional metalorganic chemical vapor deposition (MOCVD) reports, which can be potentially contributed by clean growth environment of MBE.We further focused on improving surface morphology using Indium as a surfactant. Through a combination of varying V/III ratios, In flux and growth temperatures, an optimal condition for surface morphology, characterized by atomic force microscopy, was achieved for fast growth rates (on the order of 1 µm/hr and beam equivalent pressures on the order of 5 × 10-7 Torr). However, excessive indium causes the surface morphology to degrade, potentially due to the enhancement of the Ga desorption from the surface as a result of the reaction of indium with ammonia for high indium fluxes. The indium surfactant can also reduce silicon impurities as revealed from the Secondary ion mass spectrometry (SIMS) (Fig. 2).Subsequently, we developed vertical p-n GaN power devices using the NH3 MBE-grown high-quality epitaxy [2]. The vertical p-n GaN diode consisted (from bottom up): ~0.25 µm of n+ GaN ([Si]: 1×1019 cm-3) buffer, ~4 µm UID GaN drift layer for n-type region, ~0.4 µm p+GaN ([Mg]: 3×1019 cm-3) for p-type region, and ~10 nm p++ GaN cap ([Mg]: 3×1020 cm-3) to support the anode ohmic contact. Circular p-n diodes of 80-100 µm diameter were fabricated with Pd/Pt anode and a backside Ti/ Au ohmic contact. The field management was achieved by field-plate of 15 µm formed with Ti/Au metals on top of a field-plate dielectric of a Al2O3 (26 nm)/ Si3N4 (205 nm) stack (Fig. 3).The p-n GaN diodes exhibited an outstanding forward J-V behavior with a low specific on-resistance (Ron,sp) of 0.28 mΩ-cm2 and a minimum ideality factor of 1.36 (Fig. 4), which are among the best achieved in vertical homoepitaxy GaN p-n diodes [2-4]. The best diodes also exhibited a breakdown voltage of > 1 kV (equipment limit 1 kV). These reverse-voltage properties imply a punch-through characteristics with peak electric field (EC) >2.6 MV/cm, as revealed by Silvaco simulation (Fig. 5). The combination of >1 kV breakdown voltage and on-resistance of 0.28 mΩ-cm2 represents one of the best performances of the p-n GaN diodes, achieved with a significantly downscaled (~4 um) drift layer compared to the MOCVD GaN p-n diodes of ≥ 8 um (Fig. 6). Work is ongoing to develop NHE MBE p-n diodes with indium surfactant-assisted drift layer growth which will be promising to further improve the surface morphology, reduce leakage, and enhance breakdown performance of the vertical devices.

Tailoring the Vertical and Planar Growth of 2D WS2 Thin Films Using Pulsed Laser Deposition for Enhanced Gas Sensing Properties.

In this study, pulsed laser deposition has been utilized for the controllable synthesis of WS2 thin films with growth orientation ranging from vertically to horizontally aligned layers, and the effect of growth parameters has been investigated. The growth of thin films on SiO2 substrates at three different pressures (30, 50, and 70 mTorr) and three different temperatures (400, 500, and 600 °C) has been studied. Detailed characterizations carried out on the as-grown layers clearly show the formation of the 2H-WS2 phase and its morphological evolution with deposition conditions. Atomic force microscopy and cross-sectional transmission electron microscopy have been used to deduce the growth mechanism of the vertical and planar films with different deposition parameters. The samples grown with a combination of lower temperatures and higher pressures exhibit a vertical flake-like growth with a flake thickness of ∼2-5 nm. However, at higher temperatures and lower pressures, the film growth is observed to be rather planar. The gas sensing parameters and the underlying mechanism have been observed to be quite different for vertically and horizontally grown layers. The vertical layers showed a selective response toward NO2 gas at room temperature (RT) with a limit of detection less than 50 ppb. In comparison, a very subdued and poor gas sensing response was recorded for the planar film at RT. A large specific area and abundance of active edge sites along with the flat basal plane present in the vertically grown layers seem to be responsible for efficient gas sensing toward NO2.

Ga-free AlInN films growth by close-coupled showerhead metalorganic chemical vapor deposition

In this paper, we have demonstrated that Ga-free AlInN can be obtained in the close-coupled showerhead (CCS) reactor metalorganic chemical vapor deposition (MOCVD) system when thorough cleaning was applied. For the AlInN films grown in the CCS reactor routinely used, the serious unintentional incorporation of gallium (Ga) atoms in AlInN was confirmed by the measurement results of secondary ion mass spectroscopy. To avoid the Ga incorporation, we removed the Ga-contained coatings on the surface of quartz liner, wafer susceptor, and showerhead. Then, in the reactor without Ga-contained coatings, Ga-free AlInN films were obtained. Moreover, the effect of growth parameters on the indium incorporation in AlInN and the structural properties of AlInN were studied systematically. It is worth noting that the realization of Ga-free AlInN in the CCS reactor is significantly important because CCS MOCVD system is widely used for the research and mass production of nitride materials and devices.

Effect of growth parameters on BiOI based solid-state solar cells prepared by SILAR

ABSTRACT This research article reports the effect of absorber layer thickness on the photovoltaic characteristics of the dip-successive ionic layer adsorption and reaction (SILAR) synthesised bismuth oxyiodide (BiOI) solid-state cell. The study result clarifies that, as the cycle number of the dip-SILAR process increases from 10 to 30, the structural and morphological improvement occurs. That causes the enhancement of BiOI absorber layer compactness and continuity; due to that, the photovoltaic properties reach their maximum value. However, as the cycle increased to 35 cycles, the photovoltaic performance decreased. It was also found that the optimum annealing temperature is 100°C. At optimised thickness and post-annealing temperature conditions, the hole transport layer (P3HT) has been introduced. As a result, short-circuit current, fill-factor, and power conversion efficiency were enhanced by 25.5%, 23.1%, and 17.4%, respectively. The stability of BiOI solid-state cell with and without P3HT are also presented.

Effects of growth parameters on HfO2 thin-films deposited by RF Magnetron sputtering

Hafnium oxide is well known and extensively studied material for electronic and optical applications. In this work, HfO2 films have been investigated at different radio frequency (RF) powers to elucidate the grain growth, structural and optical properties. Also, the MATLAB coded envelope method was utilized and tested to extract the optical properties more efficiently. As a result, the film thickness and grain size increase linearly with power. In addition, the grain size increases from 35 nm to 287 nm with RF power. These values are more or less consistent with Rutherford Backscattering Spectroscopy (RBS), optically derived film thickness. An interlayer is formed between film and substrate, and its thickness increases from 4 to 10 nm with deposition power. The transformation from amorphous to polycrystalline nature has been observed with the variation of RF power. The different kinds of oxygen defects were found in films obtained by different deposition rates, which is evident from photoluminescence measurement. This study will be utilized to understand films’ deposition parameter dependant structural and optical properties and understand their underlying physics.

Effect of CVD parameters on large area growth of highly crystalline MoS2 thin flakes

In this study, we presented a report on effect of growth parameters (seeding promoter, growth temperature, Ar gas flow rate) on the formation of MoS2 monolayer. The morphology and structure of as-grown MoS2 were investigated in detail by optical microscopy, atomic force microscopy, Raman and photoluminesence spectroscopy techniques. The results showed that a highly reproducible growth of dense MoS2 triangular flakes with the size of ~35 µm over large area (~1.5x1 cm2) can be obtained by using a optimized parameters. The MoS2 field effect transistors based on the as-grown MoS2 exhibited carrier mobility of 0.5–2 cm2V−1s−1 and On/Off ratio of ~104. Our results can provide a useful information to realize large area, high quality of MoS2 for real electronic applications.

Effect of growth parameters on morphology and quality of magnetic graphene-cobalt nanocomposite made by electrochemical deposition/exfoliation

Effect of growth parameters on morphology and quality of magnetic graphene-cobalt nanocomposite made by electrochemical deposition/exfoliation

Effect of growth parameters on defect structure and optical properties of ultrathin SnO2 films

Tin oxide films with thicknesses in the range from 5 to 110 nm have been deposited by reactive dc magnetron sputtering of Sn in Ar + O plasma at a low working pressure of 1.0× 10 −3 Torr on glass substrates at different temperatures (150–400 °C). The effect of deposition time, substrate temperature, and oxygen partial pressure on surface morphology , crystallographic structure, optical properties, and photoluminescence characteristics of SnO 2 films has been studied and correlated with their defect structure . The structural transformation from nanocrystalline to polycrystalline of thicker films >40 nm and films were grown at higher temperature is explained based on adatom mobility and uniform substrate coverage. Based on photoluminescence characteristics and transmittance spectra, the 20 nm thick film exhibits the least defect structure and best electronic and optical behaviors. • Ultrathin SnO 2 films (5–20 nm) are successfully grown by DC reactive sputtering. • Effect of scaling down film thickness (down to 5 nm) on physical properties. • Correlation between defect structure and optical properties. • Thinner films are much smoother than the thicker films. • Low structural defect concentration found in 10–40 nm films.

Evolution of biomass to porous graphite carbon by catalytic graphitization

The generation of porous graphitic carbon (PGC) by catalytic graphitization of biomass has been widely studied and the growth evolution mechanism needs to be further investigated. This study investigated the direct growth of PGC through sugarcane bagasse and microcrystalline cellulose as raw materials. Structural analyses by Brunauer–Emmett–Teller theory and Raman spectroscopy showed a significant improvement in graphitic structure. The SBET of PGC derived from sugarcane bagasse at 1000 °C for 1 h with 5 mmol Fe was 311 m2 g−1, and I2D/ID ratio was 0.553. The effect of growth parameters on the qualities of PGC was investigated by transition state theory and chemical reaction rate curves, and the growth mechanism of PGC was elucidated. Results showed that the biomass carbon sources evolve first from small molecule substances to graphene oxide and then to PGC under appropriate conditions. This study provided a comprehensive strategy for the rational and effective preparation of PGC and opened a clear pathway for the low-cost synthesis of graphitic carbon materials.

Effect of Growth Parameters on MoS2 Film Quality Deposited by Low-Temperature MOCVD Using I-Pr2DADmo(CO)3 and (t-C4H9)2S2

ABSTRACT Molybdenum disulfide (MoS2) is one of the representative two-dimensional layered material that is being actively researched for application in various fields owing to its characteristics such as a moderately wide bandgap (~1.8 eV) and excellent stability. Particularly promising applications include thin film transistors (TFTs) for displays and three-dimensional integrated circuits (3D-ICs). However, applications in these fields require direct deposition of high-quality films at a low temperature in order to meet the conditions such as the softening temperature of the glass for displays (<500-600°C) and the process temperature in the back-end of line of semiconductor device fabrication (<500°C). Low-temperature fabrication of MoS2 thin film using metalorganic chemical vapor deposition (MOCVD) has already been demonstrated in several previous studies [1-3]. However, they include processes such as long deposition times of about 10 hours or more [1,3], the use of highly toxic hydrogen sulfide (H2S) [2,3], and the addition of NaCl as a growth promoter [1,3]. These processes may lead to decrease in productivity and safety problems which would result in cost increase, and decrease in device reliability due to sodium contamination. These problems are considered to be bottlenecks for industrial and practical use. Our previous report examined process strategies that could overcome these challenges [4]. As a molybdenum precursor, we adopted i-Pr2DADMo(CO)3, which shows high adsorption and is expected to improve the throughput and suppress parasitic gas phase reactions. As a sulfur precursor, we used (t-C4H9)2S2, which is non-toxic as opposed to H2S. For the samples in our study, we demonstrated low-temperature (≤500°C) growth of MoS2 thin film without adding NaCl. However, the grain size was very small, about 10 nm, suggesting that it is necessary to improve the film quality for device application. Therefore, the purpose of this study is to investigate the effects of various deposition parameters on film growth and to provide guidelines for process optimization for improvement of film quality.In this study, the growth of MoS2 thin films by MOCVD was carried out in a cold wall type reactor, and the above-mentioned organic compounds were used as Mo and S precursors, and sapphire (0001) was used as the substrate. The samples were evaluated for film morphology by scanning electron microscope (SEM), Atomic Forth Microscopy (AFM) and film composition by X-ray photoelectron spectroscopy (XPS).Figure 1 (a) shows the surface SEM images of each sample with the S precursor supply rate set from 0.2 to 1.5 sccm while keeping the Mo precursor supply rate constant at 4.9 x 10-3 sccm. In addition, Fig. 1 (b) shows the average grain size and nucleation density calculated from 6 points in the sample with respect to the S precursor supply rate. As the S precursor supply rate increased from 0.2 to 0.7 sccm, decrease in nucleation density and increase in grain size up to approximately 110 nm were confirmed. It has been reported that the critical radius of clusters is larger for the clusters with stoichiometric composition than those with higher metal ratio with lacking chalcogen [5]. Therefore, it is considered that nucleation was suppressed by the increase in the critical radius of the cluster induced by the increase in the supply rate of S precursor. On the other hand, when the S precursor supply rate was further increased to 1.5 sccm, the nucleation density increased and the grain size decreased. This suggests that the S precursor supply rate have an optimum value within the range investigated in this study. We also evaluated the effect of temperature, pressure, and so on.This work was partly supported by JST CREST Number JPMJCR16F4, Japan. This work was also partly supported by JSPS KAKENHI Grant Number 18J22879. REFERENCE Kang, S. Xie, L. Huang, Y. Han, P. Y. Huang, K. F. Mak, C.-J. Kim, D. Muller, and J. Park, Nature 520, 656 (2015). Mun, Y. Kim, I.-S. Kang, S. K. Lim, S. J. Lee, J. W. Kim, H. M. Park, T. Kim, and S.-W. Kang, Scientific Reports 6, 21854 (2016). Mun, H. Park, J. Park, D.H. Joung, S.-K. Lee, J. Leem, J.-M. Myoung, J. Park, S.-H. Jeong, W. Chegal, S.W. Nam, and S.-W. Kang, ACS Appl. Electron. Mater. 1 (4), 608 (2019). Yamazaki, Y. Hibino, Y. Oyanagi, Y. Hashimoto, N. Sawamoto, H. Machida, M. Ishikawa, H. Sudo, H. Wakabayashi and A. Ogura, MRS Advances 5, 1643 (2020). Yue, Y. Nie, L. A Walsh, R. Addou, C. Liang, N. Lu, A. T Barton, H. Zhu, Z. Che, D. Barrera, 2D Mater. 4, 045019 (2017). Figure 1

Crystal Interface Control at Low Thermal Gradient and Investigation of the Effect of Cr on the Crystal Structure and Optical Properties of Bismuth Silicate

Single crystals of bismuth silicate (Bi12SiO20) doped with chromium (0.05, 0.25, 0.5, and 1.0 at%) have been grown along ⟨110⟩ by Czochralski technique. The effect of growth parameters like low axial thermal gradient and crystal rotation rate on the crystal−melt interface is investigated by varying these parameters. Further, the effect of Cr incorporation on the lattice parameter, optical bandgap, emission characteristics, and refractive index is studied. It is observed that as the concentration of Cr increases, the lattice parameter increases, because the size of Cr ion is higher than that of Si ion which it replaces. The bandgap is found to decrease with the increase in the concentration of Cr in the lattice of Bi12SiO20. The estimated bandgap energy of all the samples lies between 2.16 and 3.12 eV. The estimated Urbach energy is ≈115 meV for undoped BSO and it is slightly higher (≈200 meV) for Cr‐doped crystals. Further, 0.05 and 0.25 at% Cr‐doped samples exhibit emission peak at around 470 nm on excitation at 420 nm. The refractive index is found to decrease with the increase in Cr concentration in the lattice.

Effect of Growth Parameters on MoS2 Film Quality Deposited by Low-Temperature MOCVD Using I-Pr2DADmo(CO)3 and (t-C4H9)2S2

This study investigates the effect of various deposition parameters on the MOCVD film growth and provide guidelines for process optimization for the film quality improvement. As a typical result, 93 % coverage with average grain size of 70-80 nm and maximum grain size of approximately 110 nm was achieved in 4 h deposition time at 450°C using non-toxic precursors. Further improvement can be expected by CVD apparatus refinement for uniform precursor supply and/or sample rotation.

The Effect of Growth Parameters on Electrophysical and Memristive Properties of Vanadium Oxide Thin Films.

We have experimentally studied the influence of pulsed laser deposition parameters on the morphological and electrophysical parameters of vanadium oxide films. It is shown that an increase in the number of laser pulses from 10,000 to 60,000 and an oxygen pressure from 3 × 10−4 Torr to 3 × 10−2 Torr makes it possible to form vanadium oxide films with a thickness from 22.3 ± 4.4 nm to 131.7 ± 14.4 nm, a surface roughness from 7.8 ± 1.1 nm to 37.1 ± 11.2 nm, electron concentration from (0.32 ± 0.07) × 1017 cm−3 to (42.64 ± 4.46) × 1017 cm−3, electron mobility from 0.25 ± 0.03 cm2/(V·s) to 7.12 ± 1.32 cm2/(V·s), and resistivity from 6.32 ± 2.21 Ω·cm to 723.74 ± 89.21 Ω·cm. The regimes at which vanadium oxide films with a thickness of 22.3 ± 4.4 nm, a roughness of 7.8 ± 1.1 nm, and a resistivity of 6.32 ± 2.21 Ω·cm are obtained for their potential use in the fabrication of ReRAM neuromorphic systems. It is shown that a 22.3 ± 4.4 nm thick vanadium oxide film has the bipolar effect of resistive switching. The resistance in the high state was (89.42 ± 32.37) × 106 Ω, the resistance in the low state was equal to (6.34 ± 2.34) × 103 Ω, and the ratio RHRS/RLRS was about 14,104. The results can be used in the manufacture of a new generation of micro- and nanoelectronics elements to create ReRAM of neuromorphic systems based on vanadium oxide thin films.

Effect of growth parameters at different levels of seed rate in wheat under irrigated area

Optimum seeding rate is one of the most important production factors for higher grain yield as well as for quality crop. Indiscriminate use of seeding rates not only increases production costs but usually decrease wheat grain yield. Crop sown with quality of seeds, row-spacing of 22.5 cm and seed rate of 120 kg ha-1 had better growth and yield. Maximum plant height, number of tillers, length of ear head, grains spike-test weight, biological yield, grain yield and harvest index were found in breeder seed with 22.5 cm row-spacing at 120 kg ha-1 seed rate which was superior over other treatments combinations.

A study on the effect of film crystallinity and morphology on charge carrier concentration-dependent hole mobility in pentacene thin-film transistors: advantages of high deposition rate

The combined effect of deposition rate and substrate temperature on the film crystallinity, morphology, and electronic properties of pentacene is studied. It is shown that the channel mobility in polycrystalline pentacene thin-film transistors is relatively immune to substrate temperature, and the films offer good hole mobility when grown at a high rate. This is advantageous when high throughput with low deviation in electrical parameters over devices are required. The surface morphology is characterized by atomic force microscopy measurements and the crystallinity is studied using x-ray diffraction. The effect of growth parameters on the crystalline phases of pentacene is correlated to the charge carrier transport. It is found that the field-effect mobility is primarily affected by the crystalline phases of the film rather than the grain size. The charge carrier dependence of the hole mobility is used to parameterize the dispersion (width) in the density of states (DOS) of the highest occupied molecular orbital of the films in the transistor channel region. It is found that the presence of multiple phases in the path of the charge carrier flow increases the dispersion of the DOS.

Facile preparation and strong adhesive strength of honeycomb polyurethane films with small pore diameter

AbstractWith the continuous development of bionics, such as, geckos and virginia creeper with both superhydrophobic and super‐adhesive, the surface wetting and super‐adhesive properties of various porous materials have attracted extensive attention of the scientific and medical communities. Here, the honeycomb polyurethane (PU) porous films with strong adhesion were successfully prepared by microphase separation method and the effects of growth parameters on their microstructure and adhesive strength to ice were investigated. It was found that a high relative humidity (e.g., 100%) and a low solution concentration (e.g., 2%) facilitated the formation of ordered honeycomb PU porous films, and as‐prepared PU pores with average pore diameter as small as 5 μm are better ordered and more uniform than these in related documents. Although the contact angle of water droplets on the surface of PU porous films increased from the premodification value of 85–130° to more than 160° after surface modification with polydopamine (PDA), the corresponding rolling angle remained approximately constant (180°), indicating that the surface of PU porous films has strong adhesion similar to geckos and virginia creeper. Furthermore, at lower temperature, the PU porous films exhibited the high adhesive strength of 142.13 kPa on ice, which was strongly dependent on the porous microstructures and surface compositions. The improved adhesive behavior to ice of honeycomb PU porous films modified with PDA provides new strategies for surface modification of materials and potential applications in medical domain.

Effect of Growth Parameters on the Photocatalytic Performance of TiO2 Films Prepared by MOCVD

The present study evaluated the main factors that influence the photocatalytic activity of titanium dioxide (TiO2) films grown by metalorganic chemical vapor deposition (MOCVD) at 400 and 500 °C, in different growth times. The photocatalytic behavior was analyzed by measuring the methyl orange dye degradation at different pH values. Structural and morphological characteristics, and the recyclability of the catalysts for several cycles were also investigated. Anatase phase was identified in all films. The higher photodegradation performances were obtained at acidic pH. The results demonstrated that the photocatalyst thickness is an important parameter in heterogenous photocatalysis. The best photocatalytic result occurred for the 395 nm-thick TiO2 film grown at 400 °C, which presented 65.3% of the dye degradation under UV light. The recyclability experiments demonstrated that the TiO2 films grown by MOCVD present a great stability after several photocatalytic cycles, which allows their practical application for water treatment with high efficiency.

Design of a new MD-600C ZnO-MOCVD reaction cavity and study of process parameters

In this study, a low maintenance cost and high production efficiency MD-600C ZnO-MOCVD is developed based on the mass-produced MD-600B ZnO-MOCVD. Based on the design model of the MD-600C reaction chamber, the chemical reaction-transport model of ZnO grown with DEZn and O2 was used to analyze the deposition rate and uniformity of ZnO thin films by orthogonal experimental design. The effects of growth parameters on film quality were determined. The results show that the ZnO thin films prepared under the optimized conditions have good uniformity and a good deposition rate. The growth temperature and chamber pressure have the greatest influence on the deposition rate quality, followed by the inlet flow rate and the base speed, and the most important factors affecting film uniformity are the cavity pressure and inlet flow rate, followed by the base speed and growth temperature. The optimum combination process was simultaneously obtained by orthogonal analysis. The above results provide a solution for high quality epitaxy growth of MD-600C ZnO-MOCVD and a theoretical basis for equipment process improvement.