Abstract
This study investigates the effect of various deposition parameters on the MOCVD film growth and provide guidelines for process optimization for the film quality improvement. As a typical result, 93 % coverage with average grain size of 70-80 nm and maximum grain size of approximately 110 nm was achieved in 4 h deposition time at 450°C using non-toxic precursors. Further improvement can be expected by CVD apparatus refinement for uniform precursor supply and/or sample rotation.
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