Design of a new MD-600C ZnO-MOCVD reaction cavity and study of process parameters

Abstract

In this study, a low maintenance cost and high production efficiency MD-600C ZnO-MOCVD is developed based on the mass-produced MD-600B ZnO-MOCVD. Based on the design model of the MD-600C reaction chamber, the chemical reaction-transport model of ZnO grown with DEZn and O2 was used to analyze the deposition rate and uniformity of ZnO thin films by orthogonal experimental design. The effects of growth parameters on film quality were determined. The results show that the ZnO thin films prepared under the optimized conditions have good uniformity and a good deposition rate. The growth temperature and chamber pressure have the greatest influence on the deposition rate quality, followed by the inlet flow rate and the base speed, and the most important factors affecting film uniformity are the cavity pressure and inlet flow rate, followed by the base speed and growth temperature. The optimum combination process was simultaneously obtained by orthogonal analysis. The above results provide a solution for high quality epitaxy growth of MD-600C ZnO-MOCVD and a theoretical basis for equipment process improvement.