Doping Concentration Research Articles

Study of Structural, Thermal and Electrical Properties of Sr-Doped CaMnO<sub>3</sub>

Sr-doped CaMnO3 materials have wide applications due to their thermal and electrical properties. The importance of the synthesis of Sr-doped CaMnO3 material for various applications encourages researchers to evaluate and refine the synthesis process. In this study, Ca1-xSrxMnO3 (x = 0; 0.05; 0.1; 0.15; 0.2) system has been prepared by sol-gel method followed by conventional sintering process at 850°C for 8 hr. A thorough discussion has been made on the outcomes derived from the investigation on the structural, electrical, and thermal properties of Sr-doped CaMnO3 system using powder x-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy, DC fourprobe method, thermal expansion studies, and thermoelectric power analyses. The XRD patterns of all prepared samples exhibited single phase with orthorhombic crystal structure (space group Pnma). Rietveld refinements were performed for all the patterns by using Fullprof software to extract the structural properties. The values of unit cell volume of samples tend to increase with the increment of dopant concentration, whereas the crystallite size values were decreased with dopant concentration. The microstructures of all the samples were studied using SEM, and elemental compositions were confirmed from the EDS results. Linear thermal expansion coefficients of all the samples were found to have moderate values in the temperature range from 30°C to 800°C. The electrical properties of all the system of samples were studied in the temperature range from 30°C to 400°C using DC fourprobe conductivity setup. It was found that all the samples exhibited semiconductor nature. Sr-content on the A-site suppress the electrical resistivity up to 10% of concentration and 5% dopant content exhibited the lowest electrical resistivity. The values of Seebeck coefficient found to vary from -160 µV/K to -124 µV/K with the increase of dopant content in the parent compound.

Design and performance exploration of Pb-free low-cost all-inorganic perovskite-inspired CuAgBi2I8 solar cells: theoretical approach

Abstract Organic–inorganic halide perovskites have demonstrated great potential for photovoltaic applications owing to their unprecedented optoelectronic properties and low manufacturing costs. However, the commercialization of this technology is hindered by its thermal instability and inherent toxicity. In this study, SCAPS-1D simulation software was used to study the performance of solar cell based on CuAgBi2I8, which is a novel inorganic non-toxic lead-free perovskite-inspired material. Different electron transport layers (TiO2, In2S3, ZnO, Zn0.75Mg0.25O,SnO2 and SrTiO3) and hole transport layers (CuI, PEDOT:PSS, CuSCN and Cu2O) were studied, our research indicated that SnO2 and NiO formed the optimal combination. Further analysis revealed that the optimal absorption layer thickness was 900 nm, the absorption layer doping concentration should be less than 1 × 1013 cm−3 and the defect density should be less than 1 × 1014 cm−3. The optimal thickness of SnO2 and NiO was 30 nm, the optimal doping concentration of SnO2 and NiO was 1 × 1020 cm−3, the defect density of absorber layer/SnO2 and absorber layer/NiO interfaces should be less than 1 × 1012 cm−3, C was the optimal back electrode material. Consequently, the optimal device configuration was identified as FTO/SnO2/CuAgBi2I8/NiO/C, the efficiency was improved from original 2.76% to 19.10% after above optimization. These results indicate that solar cell with CuAgBi2I8 as the absorber layer is a potential alternative to organic–inorganic lead halide perovskite solar cells.

Improved Dopant Fraction Variance Estimation in Statistical ALCHEMI Based on Correct Error Propagation Rule.

This report revisits the statistical atom location by channeling enhanced microanalysis (St-ALCHEMI) method, correcting the dopant site occupancy error by applying an appropriate error propagation rule. A revised equation for calculating the uncertainty in the determined dopant fractions is proposed. The revised equation is expected to correct the uncertainty in the determined dopant fractions, which is particularly significant in cases of low dopant concentrations and variable dopant occupancies across inequivalent host atomic sites. The approach is validated using Eu-doped Ca2SnO4 as a typical model system.

Effects of 10 keV Electron Irradiation on the Performance Degradation of SiC Schottky Diode Radiation Detectors

The silicon carbide (SiC) Schottky diode (SBD) detector in a SiC hybrid photomultiplier tube (HPMT) generates signals by receiving photocathode electrons with an energy of 10 keV. So, the performance of the SiC SBD under electron irradiation with an energy of 10 keV has an important significance for the application of the SiC-HPMT. However, studies on 10 keV radiation effects on the SiC SBDs were rarely reported. In this paper, the performance degradation of the SiC SBDs irradiated by 10 keV electrons at different fluences was investigated. After the irradiation, the forward current of the SiC SBDs increased, and the turn-on voltage decreased with the irradiation fluences until 1.6 × 1016 cm−2. According to the capacitance–voltage (C-V) curves, the effective doping concentration increased slightly after the irradiation, and an obvious discrepancy of C-V curves occurred below 5 V. Moreover, as a radiation detector, the peak position of the α-particles’ amplitude spectrum changed slightly, and the energy resolution was also slightly reduced after the irradiation due to the high collection charge efficiency (CCE) still being larger than 99.5%. In addition, the time response of the SiC SBD to the 50 ns pulsed X-ray was almost not affected by the irradiation. The results indicated that the performance degradation of the SiC SBD irradiated at the fluence of 1.5 × 1017 cm−2 would not result in a deterioration of the properties of the SiC-HPMT and showed an important significance for the supplement of the radiation resistance of the SiC SBD radiation detector.

Half-Metal Ferromagnetism V-Doped GaN Nanosheet Application in Spintronic Device

The density functional theory calculations using general gradient approximation (GGA) have been systematically performed to study the electronic structures, the density of states (DOS), and magnetic properties of V-doped GaN nanosheet for different dopant concentrations (2.08% and 4.16%). We conducted the entire study using the Atomistixtool kit code. The electronic properties were improved with the Hubbard values U = 4 eV. V-doped CaN nanosheet exhibits stable ferromagnetic (FM) states relative to corresponding antiferromagnetic (AFM) states. The calculated TC with the V-doping is found to be above the room temperature (RT) one. Calculation results reveal that V-doped nanosheets may be a good candidates for spintronics due to its good half-metal ferromagnetism.

In-Silico Design and Optimization of p-BaSi₂/n-Bi₂S₃ Heterojunction for Enhanced Photovoltaic Performance

This study aims to explore the integration of Bi2S3 as an electron transport layer (ETL) in BaSi2-based thin-film solar cells for the enhanced performance. Using the globally accepted SCAPS-1D simulation tool, a novel device architecture consisting of Al/SnO2:F/Bi2S3/BaSi2/Ni was systematically designed and optimized. Key optimization parameters include the thicknesses, carrier concentrations, bulk defect densities of each layer, interface defects, operating temperature, and the influence of series and shunt resistance on overall efficiency. The simulation results reveal that a BaSi2 layer with an optimized thickness of 1 µm and a doping concentration of 5 x 1019 cm-3, yields noteworthy outcomes. Specifically, champion efficiency (

Charge Transport Characteristics in Doped Organic Semiconductors Using Hall Effect

Numerical computations through the finite element method (FEM) are used to determine the impact of doping on carrier concentration and recombination between charges in time for organic semiconductor diodes having low mobility. The Hall effect is used to determine the effects of doping on the performance and reliability of organic semiconductor devices by accurately modeling these processes. In this work, the number density of charge carriers and Hall voltages are computed for n-type doped semiconductors with two different recombination processes, such as non-Langevin and Langevin-type. The findings reveal that in the Langevin system with β′=1, the number density of charge carriers is almost five and four times lower compared with the non-Langevin system with β′=0.01 for increasing dopant concentrations of Npd = 1 and 3, respectively. The Langevin system also had lower Hall voltages than the steady-state and non-Langevin systems for different magnetic fields with dopants, and the non-Langevin system had nearly identical Hall voltages as the steady-state case. The outcome of the current work provides insights into charge transportation mechanisms in low-mobility doped organic semiconductors with Hall effect measurements to improve device efficiency.

The advantages of employing i-a-SiOX:H as a buffer layer in hydrogenated amorphous silicon oxide solar cells

Abstract This study focuses on a p-i-n single junction solar cell made of hydrogenated amorphous silicon oxide (a-SiOx:H), aiming to enhance solar cell efficiency by mitigating the impact of discontinuities and mismatches occurring at the i/p defect-rich interface between the window layer and the absorber layer. To address this concern, the impact of adding a thin i-a-SiOx:H buffer layer between the p-a-SiOx:H window layer and the i-a-SiOx:H active layer was investigated through numerical modeling using the AMPS-1D (Analysis of Micro-electronic and Photonic Structures) computer program. Implementing these changes led to a remarkable increase in conversion efficiency, rising from 5.714% to an impressive 8.929%. The increase in short-circuit current (JSC), however, is due to improved quantum efficiency at short wavelengths between 350 and 550 nm. Furthermore, enhancing the built-in potential (Vbi) at the i/p interface, combined with the buffer layer’s appropriate band gap energy, increases VOC (open-circuit voltage) from 850 to 993 mV. The substantial improvement in the fill factor (FF) from 63.1 to 83.1% can be largely attributed to the smoothed band offset, primarily facilitated by the presence of the buffer layer at the p/i interface, which led to more efficient extraction of photogenerated holes. To ensure effective usage of the buffer layer, the thickness of a-SiOx:H (buffer layer) varied between 3 nm and 9 nm, while the p-type doping concentration of the same layer was adjusted between 0 and 1020 cm−3. In summary, adding a 3 nm thick a-SiOx:H buffer layer with an intermediate band gap and with a p-type doping concentration (NA) below 1018 cm−3 at the i/p interface improves the electrical and optical properties of the p-i-n solar cells (EFF = 8.951%; VOC = 0.994 V; FF = 83.1%; JSC = 10.842 mA.cm−2).

New Horizons for Temperature Sensing and Bioimaging Using Er3+‐Doped Core@Shell Nanoparticles and Effects of H2O and D2O Solvents on Their Spectroscopic Properties

AbstractLanthanide‐doped nanoparticles (NPs) exhibit temperature‐dependent luminescence, enabling the design of luminescent nanothermometers for industrial and medical applications. This research demonstrates the temperature‐sensing properties of NaYF4:7.5%Er3+@NaYF4 and NaErF4@NaYF4 NPs, which have a hexagonal shape and average size of 17 nm. Their core@shell structure is confirmed using high‐resolution transmission electron microscopy, and they exhibit intense upconversion (UC) emission under 1532 nm excitation in H2O and D2O colloids. The recorded spectra show Er3+ emission bands with varying intensity ratios depending on the Er3+ concentration, chosen solvent, and temperature. The spectroscopic properties of the studied NPs allow for their excitation and observation of emission within biological windows, which makes them useful for bio‐related applications. The emission of prepared NPs is analyzed as a function of temperature from 298 up to 358/363 K in H2O and D2O. The ratios for thermally‐coupled levels and non‐TCLs and their relative sensitivities are studied. For the high dopant concentration sample in water, the O─H vibrations and blue shift in the absorption spectrum lead to a record relative sensitivity of 2.50% K−1 (at 363 K) for the 2H11/2/4I11/2 ratio. The use of synthesized NPs for bioimaging under 1550 nm excitation is also demonstrated to observe their accumulation in the guts of Daphnia magna.

Effect of (Zr, Ta) doping on electronic and magnetic properties of zinc-blende MgTe DMS compound: AB-initio approach

This study utilizes density functional theory (DFT) and the Korringa-Kohn-Rostoker coherent potential approximation (KKR-CPA) to explore the effects of zirconium (Zr) and tantalum (Ta) doping on the electronic and magnetic properties of zinc-blende MgTe. The electronic configurations of Mg1-x(TM)xTe (TM = Zr, Ta) were analyzed, revealing that Zr induces magnetic behavior with near-total spin polarization, while Ta doping leads to metallic behavior with partial polarization. The variations in magnetic moments are largely determined by impurity concentrations, with ferromagnetic stability in both systems driven by a double exchange interaction mechanism. Additionally, Curie temperatures exceeding room temperature were observed for specific doping concentrations. These results suggest significant potential for MgTe-based materials in spintronic applications. The findings further illustrate that Zr-doped alloys display half-metallicity, making them especially promising for future spintronics device development. KEY WORDS: DMS, KKR-CPA, Polarization, Metallic behavior, Curie temperature, Double exchange, Spintronic Bull. Chem. Soc. Ethiop. 2025, 39(1), 153-164. DOI: https://dx.doi.org/10.4314/bcse.v39i1.13

An improved 4H-SiC trench MOS barrier Schottky diode with current spreading layer and low resistance layer

This paper investigates an improved trench MOS barrier Schottky (TMBS) structure with extra double epitaxial layers (DE-TMBS) based on the conventional TMBS (C-TMBS) featuring a high-doped N-type current spreading layer (CSL) and a high-doped low resistance layer (LRL). Compared to the C-TMBS, the CSL in the improved structure is grown on the N-type drift region, and the LRL is extended on the CSL. According to the numerical simulations and analytical models, the specific on-resistance (Ron,sp) of DE-TMBS can be significantly reduced compared to the conventional one. This is primarily due to the high doping concentration in CSL, which effectively lowers both the JFET resistance and spreading resistance. Additionally, the increased doping concentration in LRL reduces the channel resistance and JFET resistance. Moreover, the doping concentration and thickness of CSL and LRL are optimized to maximize the figure of merit (FOM), that Ron,sp is reduced by 40.9 % and the FOM (BV2/Ron,sp) is improved by 67.9 % compared to the C-TMBS structure.

Electrical Doping in Sc-III-Nitrides: Toward Multifunctional Devices at the Signal Device Level.

A homogeneous integration of various types of devices using a single material platform is an ideal route toward multifunctional devices at the single-device level for miniaturized, fast, and energy-efficient systems. However, such a single material platform is still missing. Scandium-containing III-nitrides (Sc-III-nitrides) are promising, but their electrical doping properties remain unknown. In this work, the electrical doping in Sc-III-nitrides is investigated and optoelectronic devices using Sc-III-nitrides on silicon (Si) are further demonstrated. The material format of the nanowire is used, with magnesium (Mg) serving as the impurity dopant to control the electrical doping. It is discovered that, by adjusting the Mg doping concentrations, the Sc-III-nitrides can be tuned from n-type to p-type. Device application in light-emitting is further demonstrated using the p-type Sc-III-nitrides as the hole injection layer. The performance comparison between devices using the regrown Sc-containing p-type contact layers and non-Sc-containing p-type contact layers indicates the advantage of Sc incorporation in improving the quality of the regrown p-type layer in a device structure. The electrical doping in Sc-III-nitrides demonstrated in this study represents an important step toward a homogeneous integration of different types of devices using a single material platform.

Characterization of newly developed large area SiC sensors for the NUMEN experiment

First prototypes of large area, p–n junction, silicon carbide (SiC) detectors have been produced as part of an ongoing programme to develop a new particle identification wall for the focal plane detector of the MAGNEX magnetic spectrometer, in preparation for future NUMEN experimental campaigns. First characterizations of sensors from two wafers obtained with epitaxial silicon carbide growth and with different doping concentration are presented. Current (I–V) and capacitance (C–V) characteristics are investigated in order to determine the full depletion voltage and the doping profile. Radioactive α-sources are used to measure the energy resolution and estimate the depletion depth.

Giant permittivity and humidity sensitivity of SrTiO3 based ceramics induced by K, Nb donor-acceptor co-doping

This research utilizes a solid-state sintering process to fabricate a series of Sr1-xKxTi1-xNbxO3 (x =0.01, 0.02, 0.025, 0.03) ceramics. The sample with a doping concentration of x=0.025 achieved a dielectric constant of 10409 and a dielectric loss of 0.026 at 1 kHz. With increased dopant concentrations of K and Nb, the thermal stability of the ceramics is significantly enhanced, as evidenced by a dielectric constant variation of less than 15 % for x=0.025 sample over a temperature range from room temperature to 240 °C. Employing activation energy analysis, impedance spectroscopy, humidity response assessments, and X-ray photoelectron spectroscopy, it is indicated that the excellent electrical performance is attributed to the combined effects of the Internal Barrier Layer Capacitance and the formation of complex defect dipoles. Moreover, the insights into the moisture characteristics of SrTiO3 presented in this paper imply that the giant dielectric Sr1-xKxTi1-xNbxO3 ceramics have potential in the application of humidity sensing devices.

Performance Analysis of JL-FinFET with Varied Non-Uniform Doping Concentrations, Fin Height and Fin Width using Device Simulator

With the growth of the MOSFET technology, the size of the transistor becomes smaller which can lead to Short-Channel Effects (SCEs). In order to address the SCEs, multi-gate transistor such as Fin Field-Effect Transistor (FinFET) has been invented. Meanwhile, it is found that the conventional transistor with junctions also has its drawbacks and limitations due to the decrease in the gate length. The SCEs can occur and affect the overall performance of the device with lower switching times and lower current density . In order to address these limitations, new structure of transistor without junction known as a junctionless (JL) transistor has been proposed. In this work, the impact of uniform versus non-uniform doping concentrations, fin height (Hfin) and fin width (Wfin) in JL-FinFET were investigated by using Technology Computer Aided Design (TCAD) Tools. It was found that non-uniform doping concentration of 4 x1018 cm-3 for the source/drain and of 4 x1017 cm-3 for the channel, together with Hfin of 20 nm and Wfin of 4 nm provide the best electrical performance of Ioff = 6.45 x10-17 A, Ion = 6.14 x10-6 A, Ion/Ioff = 9.52 x1010 and DIBL = 11 mV/V. The outcome of this research work can be used as a basis to understand JL-FinFET biosensors for medical applications and more complex JL structures.

Electrochemical performance of cobalt-doped NiO thin films synthesized by spray pyrolysis

ABSTRACT In this work, various cobalt-doped NiO thin films have been synthesized via the spray pyrolysis. The cobalt-doped NiO thin films show a cubic phase with preferred orientation along the (111) plane. The scanning electron microscopy images of the cobalt-doped NiO thin films show interconnected flakes with small agglomerated particles. The optical bandgap decreases from 3.30 eV for the undoped NiO thin film to 2.90 eV for 20 mol% cobalt doping, with an increase in cobalt doping concentration in NiO. The electrochemical activities have been tested in 2M KOH electrolyte with cyclic voltammetry, galvanostatic charge–discharge and electrochemical impedance spectroscopy. The highest specific capacitance observed for the 10 mol% cobalt-doped NiO thin film electrode is 760 Fg−1 at a scan rate of 5 mVs−1. The 10 mol% cobalt-doped NiO thin film electrode shows 92% retention in capacitance after 1000 cycles and a low charge transfer resistance of 10 Ωcm2.

Defect induced persistence photoconductivity in spray pyrolyzed ZnO thin films: Impact of Sm3+doping

The persistent photoconductivity of the rare earth ion doped ZnO is an emerging field. The present work focuses on the effect of samarium (Sm3+) ion doping on the persistence photo response behaviour ZnO host matrix. The Zn1-xSmxO (x = 0.0 to 0.10) thin films were deposited on chemically cleaned glass substrates using spray pyrolysis technique. The films showed polycrystalline nature and hexagonal wurtzite structure without any impurity peaks. The Zn0.93Sm0.07O films showed maximum crystallite size of 24.2 nm and minimum dislocation density. The gradual change in the thickness of the fibrous nature was observed with the addition of Sm3+ ions into ZnO lattice. Energy dispersive analysis of x-ray and X-ray photoelectron spectroscopy confirmed the presence of elements and its oxidation states in the deposited film respectively. The area under the curve of deconvoluted photoluminescence spectra of deposits confirmed the decrease in the various defect percentage with increase in the doping concentration of Sm3+ ions. The photoluminescence spectra of Zn0.93Sm0.07O films showed maximum near band edge emission and minimum defects. The Zn0.93Sm0.07O films showed higher carrier concentration of 1 × 1017 cm−3, mobility 32 cm2/Vs and lower resistivity of 1 × 102 Ω cm due to improved film quality. The Zn0.93Sm0.07O films exhibited the current value under dark and ultraviolet light illumination was in the range of 10−6 A and 10−4 A respectively. The maximum photocurrent was noticed at 375 nm which corresponds to the bandgap of the deposited films. The Zn0.93Sm0.07O films showed faster photo response (5 s and 131 s of response and recovery time) due to the presence of minimum trap states. Hence the Zn0.93Sm0.07O films can be used in the fabrication of light dependent resistors and ultraviolet sensors.

A fin-gate p-GaN HEMT with high threshold voltage and improved dynamic performance

A novel fin-gate p-GaN (FPG) HEMT is proposed to simultaneously increase threshold voltage (Vth) and improve dynamic performance of the p-GaN HEMT. The fin-gate structure works as a normally-on p-channel MESFET between gate and source by forming a Schottky-type contact on sidewall and a source-connected Ohmic-type contact on top of the fin. Thus, the Vth can change with the shutdown voltage of the p-channel MESFET, which can be modulated by the doping concentration and width of the fin-p-GaN. By optimizing the fin structure, a high positive Vth of 4V is achieved without transconductance and breakdown voltage degradation in this work. It breaks the restriction between Vth and on-resistance for conventional p-GaN HEMT. The dynamic characteristics of the FPG HEMT are investigated by SPICE simulations. Owing to the well-grounded p-GaN through the normally-on MESFET, the recovery process of the dynamic shift in Vth (ΔVth) after on/off-state stress can be accelerated by two orders of magnitude. It means an imperceptible dynamic degradation and a great potential in high frequency application for the FPG HEMT.

Conformational Modulation of Efficient Macrocyclic Emitters Featuring Delayed Fluorescence by Conjugation Length and Cavity Dimensions.

The π-conjugated macrocyclic emitters with thermally activated delayed fluorescence (TADF) characteristics have attracted widespread attention in the field of organic electroluminescence (EL) materials due to their unique geometries and excellent luminescence performance. Despite the significant impact of conjugation length and cavity dimensions on molecular conformation, the influence of these factors on the excited-state properties remains understudied. Herein, we formulated a strategy aimed at modulating the conformation of TADF macrocyclic molecules containing aniline as the donor (D) unit, and triazine as the acceptor (A), linked in D-A and D-π-A alternative macrocyclic construction (MC-TNT and MC-TST). Corroborated by experimental and theoretical analyses, the compact and conformationally twisted MC-TNT exhibits efficient blue luminescence in crystalline state, facilitating EL at high doping concentrations with maximum external quantum efficiency (EQEmax) of 13.9%, leading the field of blue macrocyclic emitters. Notably, MC-TST with π-bridge and flat conformation, demonstrates diminished Coulombic repulsion, achieving nearly 100% photoluminescence quantum yield and superior horizontal dipole orientation of 85% in 5 wt% doped films, and the corresponding device's EQEmax reaches record-high 32.7% within the TADF macrocyclic domain.

Conformational Modulation of Efficient Macrocyclic Emitters Featuring Delayed Fluorescence by Conjugation Length and Cavity Dimensions

The π‐conjugated macrocyclic emitters with thermally activated delayed fluorescence (TADF) characteristics have attracted widespread attention in the field of organic electroluminescence (EL) materials due to their unique geometries and excellent luminescence performance. Despite the significant impact of conjugation length and cavity dimensions on molecular conformation, the influence of these factors on the excited‐state properties remains understudied. Herein, we formulated a strategy aimed at modulating the conformation of TADF macrocyclic molecules containing aniline as the donor (D) unit, and triazine as the acceptor (A), linked in D‐A and D‐π‐A alternative macrocyclic construction (MC‐TNT and MC‐TST). Corroborated by experimental and theoretical analyses, the compact and conformationally twisted MC‐TNT exhibits efficient blue luminescence in crystalline state, facilitating EL at high doping concentrations with maximum external quantum efficiency (EQEmax) of 13.9%, leading the field of blue macrocyclic emitters. Notably, MC‐TST with π‐bridge and flat conformation, demonstrates diminished Coulombic repulsion, achieving nearly 100% photoluminescence quantum yield and superior horizontal dipole orientation of 85% in 5 wt% doped films, and the corresponding device's EQEmax reaches record‐high 32.7% within the TADF macrocyclic domain.