Abstract
Numerical computations through the finite element method (FEM) are used to determine the impact of doping on carrier concentration and recombination between charges in time for organic semiconductor diodes having low mobility. The Hall effect is used to determine the effects of doping on the performance and reliability of organic semiconductor devices by accurately modeling these processes. In this work, the number density of charge carriers and Hall voltages are computed for n-type doped semiconductors with two different recombination processes, such as non-Langevin and Langevin-type. The findings reveal that in the Langevin system with β′=1, the number density of charge carriers is almost five and four times lower compared with the non-Langevin system with β′=0.01 for increasing dopant concentrations of Npd = 1 and 3, respectively. The Langevin system also had lower Hall voltages than the steady-state and non-Langevin systems for different magnetic fields with dopants, and the non-Langevin system had nearly identical Hall voltages as the steady-state case. The outcome of the current work provides insights into charge transportation mechanisms in low-mobility doped organic semiconductors with Hall effect measurements to improve device efficiency.
Published Version
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