In quantum dots (QDs) systems, Förster resonance energy transfer (FRET) and Auger recombination (AR) processes are crucial mechanisms that significantly impact their photoluminescence (PL) performance. Developing a strategy to simultaneously enhance FRET process and suppress the AR process is crucial. In this study, we reported that FRET process was enhanced, and the AR process was suppressed in the carbon-CdSe/ZnS QDs system via increasing carbon QDs donor ratios. The enhanced FRET rate is assigned to the increased adsorbed numbers and shortened donor-acceptor distance. The reduced AR rate is assigned to the decoration of the surface for CdSe/ZnS QDs acceptor in increased adsorbed numbers. As a result, the PL intensity of CdSe/ZnS QDs acceptor increased by over 3-fold. Our findings will stimulate the development of highly defined cascaded energy-transfer structures, aiming to achieve high-performance light-emitting devices.
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