Front-contact metallization plays an important role in the fabrication of a solar cell as it adds up to 40% cost to the total production cost.1 Silver (Ag) screen printing is the commercialized technology for the front contact metallization. On the other hand, silver screen printing causes higher Si wafer breakage and results in conversion loss due to high line resistivity, poor aspect ratio and large printing spot size. Moreover, the high price of silver also drives up the cost of a solar cell. Copper, more than a hundred times cheaper than silver, is an alternate option for the front contact as its conductivity is comparable to that of silver.2 However, copper has a tendency to diffuse through Si and create recombination sites, which decreases the cell performance. To avoid diffusion of copper in silicon, a metal film has to be deposited that acts as a barrier layer. Among various diffusion barrier materials, Ni is the most promising because of its low bulk resistivity that makes nickel silicide compatible with the semiconductor technology.In this work, a nickel seed layer is deposited on silicon samples with light-induced plating (LIP) to obtain the low-resistive NiSi (1:1) phase. In-situ X-ray diffraction (XRD) is carried out along with annealing to understand the phase changes associated with silicide formation (Figure 1). The obtained XRD patterns of nickel deposited by LIP were not comparable with that of EM (electroless metal deposition). Mott-Schottky analysis is carried out to investigate the interface properties of Ni deposited by LIP and electroless methods.3, 4 XPS (X-ray photoelectron spectroscopy) data confirms the interfacial oxide which hindered the nickel diffusion to form silicide. References M. Razykov; C.S. Ferekides; D. Morel; E. Stefanakos; H.S. Ullal; H.M. Upadhyaya., Sol. Energy, 85, 1580 (2011). Kamp; J. Bartsch; S. Nold; M. Retzlaff; M. Hörteis; S.W. Glunz., Energy Procedia, 8, 558 (2011). Priyadarshani, P. Leuaa, R. Maurya, A. Kottantharayil and M. Neergat, J. Phys. Chem. C, 124, 19990 (2020).B. Bera, A. Chakraborty, T. Kar, P. Leuaa and M. Neergat, J. Phys. Chem. C, 121, 20850−20856 (2017). Figure 1