Diamond Materials Research Articles

(Invited) Boron-Doped Diamond Powder/Nanoparticle Materials for Electrochemical Applications

Heavily boron-doped diamond (BDD) electrode exhibits several excellent electrochemical properties such as wide potential window, low background current, as well as extreme physical and chemical stabilities. Based on these properties, the BDD electrodes are expected to be used for highly sensitive electrochemical sensors and highly efficient electrolytic electrodes. The BDD electrodes are usually prepared by depositing a polycrystalline BDD thin film on a conductive substrate such as silicon wafer, and thus are used as hard planar electrodes. Furthermore, the size of the BDD electrode also has a limit depending on the CVD apparatus. These situations limit the range of applications of BDD electrodes, despite their excellent electrochemical properties. With the aim of expanding the range of applications of BDD in the electrochemical field, we have developed BDD powder (BDDP). BDDP is a conductive diamond material, which is prepared by the deposition of a BDD layer on the surface of commercially available diamond powder. BDDP has advantages over BDD thin films, such as a larger specific surface area and the ability to create electrodes by applying ink on a substrate, and can be used for applications that have not been possible with BDD thin-film electrodes.1. BDDP-packed electrolysis flow cellBDDP-packed electrolysis flow cell was developed for application to an efficient electrolytic water treatment system. A cylinder equipped with a filter was filled with BDDP (particle size of 40-60 μm) and the packed bed served as an anode. Since the BDDPs are in contact with each other in the BDDP-packed bed, the entire BDDP-packed bed is considered to be electrically connected without a binder. On the other hand, the interparticle voids in the BDDP-packed bed form a network-like narrow channel, and the electrolyte passing through the channel can be treated efficiently. 0.1 M Na2SO4 containing 50 μM methylene blue as a model for polluted water was treated with the BDDP-packed electrolysis flow cell at a voltage of 5 V applied to the two-electrode system of BDDP-packed bed anode and Pt cathode. As a result, it was found that as the amount of BDDP loaded increased, the decomposition rate of MB increased. This suggested that the entire BDDP-packed bed functioned as an anode. Moreover, no deterioration in the decomposition rate was observed even when repeated electrolysis experiments were performed using the BDDP-packed electrolysis flow cell. Therefore, the BDDP-packed electrolysis flow cell is expected to be useful for efficient and durable electrolytic water treatment systems.2. Pt/BDDP and Pt/BDND for a durable PEFC cathode catalystsA major cause of deterioration of polymer electrolyte fuel cell (PEFC) cathode catalysts is corrosion of the catalyst support due to application of high potential during start-stop operations. Therefore, there is a need for the development of a catalyst support with excellent high potential resistance. In this study, we prepared Pt-supported BDDP (Pt/BDDP) as a durable cathode catalyst, and investigated its electrochemical properties and durability to high potentials. In the CV of Pt/BDDP with a BDDP size of 200 and 300 nm, redox peaks characteristics for Pt was observed, confirming that the BDDP functions as a conductive catalyst support. Durability tests using high potential cycling (+1.0–+1.5 V vs. NHE) showed that the electrochemically active surface area (ECA) retention rate during the test was greater for Pt/BDDP than for conventional Pt/C. Therefore, the BDDP is expected to be used for a catalyst support durable to high potential application. In addition, Pt-supported boron-doped nanodiamond (Pt/BDND) showed also superior high potential durability compared to Pt/C.

All-in-one quantum diamond microscope for sensor characterization

Ensembles of nitrogen-vacancy (NV) centers in diamond are a leading platform for sensing and imaging magnetic fields at room temperature, in part due to advances in diamond growth. An essential step to improving diamond material involves the characterization of crystal and NV-related properties, such as strain and paramagnetic impurities, which can shift and broaden the NV resonances used for sensing. Full sample characterization through wide-field imaging enables both fast and detailed feedback for growers, along with the estimation of sensing performance before use. We present a quantum diamond microscope tailored for millimeter-scale wide-field mapping of key quantum properties of NV-diamond chips, including NV ensemble photoluminescence intensity, spin-lattice relaxation time (T1), and spin-coherence lifetimes (T2 and T2*). Our design also allows for lattice stress/strain and birefringence magnitude/angle mapping, and their in situ correlation with NV properties.

Efficiency limit for diamond metal/intrinsic/p-type Schottky barrier-based betavoltaic cells

Diamond materials hold great potentials with favorable characteristics for betavoltaic cells, thanks to their simple structure, high conversion efficiency, and radiation robustness. However, to explore its efficiency limit is greatly hindered by the material growth, doping techniques, and device design as well. In this work, a device model based on a diamond metal/intrinsic/p-type (MIP) Schottky barrier architect is analyzed for an accurate prediction of the efficiency limit for the betavoltaic cell based on such a structure. The study takes various factors of significance into account on the betavoltaic cell device characteristics, including the radiation source, thickness and doping concentration of the intrinsic layer, metal work function, as well as the metal/diamond interface traps and traps in the bulk. The current–voltage characteristics and fundamental parameters of the betavoltaic cells are thoroughly analyzed. According to our results, an open-circuit voltage of 2.04 V, a short-circuit current density of 87 nA·cm−2, and a fill factor of 0.9 for the diamond MIP betavoltaic cell can be achieved, which give a maximum energy conversion efficiency of 10.7%, at optimal conditions using 50 nm thick Al metal as the contact layer, 9 μm thick and 1 × 1014 cm−3-doping intrinsic layer, and 10 μm thick and 2 × 1017 cm−3-doping p-layer under a 2 μm 63Ni irradiation. This work also discusses the impact of the interface/bulk traps on the barrier heights of practical Schottky diodes and the device's performance as well.

Investigation on growth rate and quality of diamond materials in MPCVD system

Abstract In the paper, experiments of diamond growth with varied parameters are conducted in the microwave plasma chemical vapor deposition system. The growth mechanism of the diamond is analysed based on the phase diagram. The results show that the growth rate and the crystalline quality of the diamond are influenced by the gas phase and chamber pressure. The oxygen can help to improve the crystalline quality of the diamond, while to decrease the growth rate. The methane concentration and the chamber pressure are also key parameters to influence the quality and the growth rate of the diamond. The nitrogen concentration can contribute to the growth of the diamond, and the thermal conductivity is influenced at the same time. The grown diamond substrate can be used as thermal conductor in power devices with promising thermal conductivity.

A Review of Diamond Materials and Applications in Power Semiconductor Devices.

Diamond is known as the ultimate semiconductor material for electric devices with excellent properties such as an ultra-wide bandgap (5.47 eV), high carrier mobility (electron mobility 4000 cm2/V·s, hole mobility 3800 cm2/V·s), high critical breakdown electric field (20 MV/cm), and high thermal conductivity (22 W/cm·K), showing good prospects in high-power applications. The lack of n-type diamonds limits the development of bipolar devices; most of the research focuses on p-type Schottky barrier diodes (SBDs) and unipolar field-effect transistors (FETs) based on terminal technology. In recent years, breakthroughs have been made through the introduction of new structures, dielectric materials, heterogeneous epitaxy, etc. Currently, diamond devices have shown promising applications in high-power applications, with a BV of 10 kV, a BFOM of 874.6 MW/cm2, and a current density of 60 kA/cm2 already realized. This review summarizes the research progress of diamond materials, devices, and specific applications, with a particular focus on the development of SBDs and FETs and their use in high-power applications, aiming to provide researchers with the relevant intuitive parametric comparisons. Finally, the paper provides an outlook on the parameters and development directions of diamond power devices.

Oriented growth of 5-inch optical polycrystalline diamond films by suppressing dark features

Optical diamond materials are essential for infrared optical windows, microwave windows, and laser windows due to their exceptional properties. However, dark features inside the diamond are significant factors limiting optical properties, particularly at high deposition rates. This work focuses on adjusting crystallographic parameters to prepare (110) oriented optical-grade polycrystalline diamond films, aiming to mitigate dark features. Diamond films deposited via microwave plasma chemical vapor deposition (MPCVD) exhibit discernible quality stratification. Characterization analysis of diamond film samples with varying levels of black defects reveals a correlation: films with higher dark feature content tend to exhibit a preference for the (111) orientation, accompanied by a significant presence of penetration twins and interstitial voids. Conversely, transparent diamond films demonstrate a prominent (110) orientation, featuring numerous contact twins that alleviate competition from penetration twins and original grains during growth. Electron backscatter diffraction (EBSD) and scanning electron microscope (SEM) results reveal that transparent diamond films cultivated with a pronounced preference for the (110) orientation manifest consistent and seamless contact twins, leading to fewer dark features and improved optical transmittance. In contrast, (111) oriented diamond film exhibits numerous penetration twins, and holes form between them. Based on the analysis, 5-inch optical polycrystalline diamond films with (110) orientation were achieved successfully by suppressing dark features.

Surface Interaction and Wear Due to Sliding Electrical Contact of Materials

This article reports a research study on sliding electrical contacts of copper–diamond materials, involving modeling and validation, contact status simulations, and parametric studies. The simulation model includes the analyses of both mechanical and electrical heat sources, evaluations of heat partition and temperature, and the capture of material thermal softening, plastic deformation, and material removal. The simulation model is validated through result comparison with experimental average temperature and measured wear. With this model, temperature variation and surface wear accumulation were numerically predicted under the influences of material property variations. Factors influencing wear of the copper surfaces were explored, and parameter sensitivity was investigated by means of the Taguchi L18 matrix. The results reveal that thermally related parameters of the contact interface strongly affect the wear of the copper pin, and thermal conductivity of its mating surface material is of critical importance. The research also suggests that the electromagnetic field change due to switching the polarity of the power supply does not affect the friction and wear results; however, the polarity change influences material electrochemistry, which results in a difference in friction and wear.

The Annealing Kinetics of Defects in CVD Diamond Irradiated by Xe Ions

The radiation-induced optical absorption at 1.5–5.5 eV (up to the beginning of fundamental absorption) has been analyzed in CVD diamond disks exposed to 231-MeV 132Xe ions with four fluences from 1012 to 3.8 × 1013 cm−2. The 5 mm diameter samples (thickness 0.4 mm) were prepared by Diamond Materials, Freiburg (Germany); the average grain size at growth site was around 80 μm; and the range of xenon ions was R = 11.5 μm. The intensity of several bands grows with ion fluence, thus confirming the radiation-induced origin of the defects responsible for these bands. The recovery of radiation damage has been investigated via isochronal (stepwise) thermal annealing procedure up to 650 °C, while all spectra were measured at room temperature. Based on these spectra, the annealing kinetics of several defects, in particular carbon vacancies (GR1 centers with a broad band ~2 eV) and complementary C-interstitial-related defects (~4 eV), as well as impurity-related complex defects (narrow bands around 2.5 eV) have been constructed. The experimental kinetics have also been analyzed in terms of the diffusion-controlled bimolecular reactions. The migration energies of tentatively interstitial atoms (mobile components in recombination process) are obtained, and their dependence on the irradiation fluences is discussed.

Annealing process and temperature effects on silicon-vacancy and germanium-vacancy centers in CVD grown polycrystalline diamond

The annealing treatment plays a crucial role in tailoring the properties of synthetic diamond materials, especially those doped with various elements in order to form specific color centers like nitrogen-vacancy (NV), silicon-vacancy (Si-V), germanium-vacancy (Ge-V), etc. This study delves into the annealing of 175 μm-thick Ge-doped polycrystalline diamond (PCD) films grown by microwave plasma-assisted chemical vapor deposition (MPCVD). Large-area PCD plate was cut into smaller equivalent 5 × 5 mm2 pieces, which were separately subjected to annealing in microwave plasma in H2 atmosphere, to annealing in vacuum or to annealing under high-pressure high-temperature conditions (HPHT, 5.9 GPa, 2000 °C). The structure, phase composition and photoluminescence (PL) of samples before and after various annealing processes were investigated. All applied types of annealing enhance both the Si-V and Ge-V lines in PL at room temperature. Increasing annealing temperature leads to gradual decrease of full widths at half-maxima (FWHM) of diamond Raman peak (1332.5 cm−1), as well as Si-V (738 nm) and Ge-V (602 nm) PL peaks. In addition, the limitations for each type of annealing are established. The obtained results are crucial for the design of CVD-grown Ge-doped and Si-doped PCD materials that can be used for applications in photonics such as single photon sources, biomarkers, as well as for the fabrication of optical diamond thermometers.

Diamond ∆E-E telescope with an ultra-thin ∆E-diamond detector

The limits of mechanical polishing and RIE/ICP etching process were investigated to reduce the thickness of detector-grade ultra-thin below 10 μm, preserving the high quality of starting single crystal diamond (SCD) material. Free standing electronic grade SCD films with sizes up 4.5 × 4.5 mm2 and thickness down to 5 μm with overall thickness uniformity of ±0.35 μm were fabricated. The ultra-thin films were flat demonstrating the low internal stress.Diamond ∆E − E telescope was made from 5 μm thick ΔE-detector and 500 μm thick E-detector. The telescope was installed at the MARS spectrometer (Cyclotron Institute, TAMU) and tested with 241Am and 228Th alpha sources and 20Ne ion-beam, demonstrating the good spectral resolution around 100 keV. Simulations with the LISE++ program indicate that the telescope will be suitable to measure low energy heavy ion beams at energies as low as 2–3 MeV/nu for Au and U heavy ions, and even lower energies for lighter ions. The diamond telescope will be superior to common Si radiation telescopes having a low life-time in intense heavy ion-beams.

Research and Application Progress of Laser-Processing Technology in Diamond Micro-Fabrication.

Laser-processing technology has been widely used in the ultra-precision machining of diamond materials. It has the advantages of high precision and high efficiency, especially in the field of super-hard materials and high-precision parts manufacturing. This paper explains the fundamental principles of diamond laser processing, introduces the interaction mechanisms between various types of lasers and diamond materials, focuses on analyzing the current development status of various modes of laser processing of diamond, briefly discusses the relevant applications in diamond cutting, micro-hole forming, and micro-groove machining, etc., and finally discusses the issues, challenges, and potential future advancements of laser technology in the field of diamond processing at this point.

Microstructural Characteristics and Properties of Laser-Welded Diamond Saw Blade with 30CrMo Steel.

In order to enhance the quality of diamond composite materials, this work employs a Cu-Co-Fe and Ni-Cr-Cu pre-alloyed powder mixture as a transition layer, and utilizes laser-welding technology for saw blade fabrication. By adjusting the laser-welding process parameters, including welding speed and welding power, well-formed welded joints were achieved, and the microstructure and mechanical properties of the welded joints were investigated. The results demonstrate that the best welding performance was achieved at a laser power of 1600 W and a welding speed of 1400 mm/min, with a remarkable tooth engagement strength of up to 819 MPa. The fusion zone can be divided into rich Cu phase and rich Fe phase regions, characterized by coarse grains without apparent preferred orientation. The microstructure of the heat-affected zone primarily consists of high-hardness brittle quenched needle-like martensite, exhibiting a sharp increase in microhardness up to 550 HV. Fracture occurred at the boundary between the fusion zone and the heat-affected zone of the base material, where stress concentration was observed. By adjusting the welding parameters and transition layer materials, the mechanical properties of the joints were improved, thereby achieving a reliable connection between diamond composite materials and the metal substrate.

Modelling of the microstructure and thermal conductivity of SiC-bonded diamond materials

Materials with high thermal conductivity are required in a wide range of thermal management applications. Silicon carbide (SiC) bonded diamond materials, which can be produced without pressure, are a possible candidate for such applications. They exhibit thermal conductivities >650 W/(m·K) depending on the diamond content, diamond grain size and residual silicon content. It is difficult to experimentally determine the influence of these factors on the thermal conductivity separately, as changing one of these parameters affects the other parameters. Therefore, a method for generating digital microstructures of SiC- bonded diamond materials was developed and the thermal conductivity was calculated as a function of the grain size These data were compared with real structures.

Development of a large volume line scanning, high spectral range and resolution 3D hyperspectral photoluminescence imaging microscope for diamond and other high refractive index materials

Hyperspectral photoluminescence (PL) imaging is a powerful technique that can be used to understand the spatial distribution of emitting species in many materials. Volumetric hyperspectral imaging of weakly emitting color centers often necessitates considerable data collection times when using commercial systems. We report the development of a line-scanning hyperspectral imaging microscope capable of measuring the luminescence emission spectra for diamond volumes up to 2.20 × 30.00 × 6.30 mm with a high lateral spatial resolution of 1–3 µm. In an single X-λ measurement, spectra covering a 711 nm range, in a band from 400–1100 nm, with a spectral resolution up to 0.25 nm can be acquired. Data sets can be acquired with 723 (X) × 643 (Y) × 1172 (λ) pixels at a rate of 6 minutes/planar image slice, allowing for volumetric hyperspectral imaging with high sampling. This instrument demonstrates the ability to detect emission from several different color centers in diamond both at the surface and internally, providing a non-destructive method to probe their 3D spatial distribution, and is currently not achievable with any other commonly used system or technique.

Non-linear diamond material removal at increased sliding velocities in ultra-precision grinding

Single crystal diamond machining primarily relies on mechanical grinding, traditionally guided by the simplistic concept of a linear removal rate. However, this conventional approach lacks precision in predicting the resultant shape. This comprehensive study delves into the influence of sliding speed on the material removal rate during the mechanical grinding of diamond, leveraging both theoretical frameworks and experimental exploration. Initially, the impact of sliding velocity is meticulously scrutinized by considering the contact frequency between the diamond and grinding wheel grits, as well as the depth associated with the brittle-ductile transition of diamond material. Subsequently, a model quantifying the effect of sliding velocity is meticulously formulated and rigorously tested through experimentation. The findings of this investigation not only affirm the validity of the theoretical analyses but also underscore the remarkable predictive accuracy of the sliding velocity effect model. These results, situated at the intersection of theory and practice, offer invaluable insights with profound implications for enhancing the efficiency and precision of single crystal diamond machining processes.

Special Issue on Abrasive Technology for High-Precision and High-Efficiency Machining of High-Performance Materials

The demand for high-precision and high-efficient machining of high-performance materials and components has increased in various industries such as optical, automotive, communication, life sciences, and medical sciences. Certain difficult-to-machine materials can be reliably machined using deterministic precision cutting processes. However, hard and brittle materials such as ceramics, carbides, hardened steel molds, glassy materials, or semiconductor materials, require precision abrasive technologies with super abrasives like diamond, cBN, or new tool materials for machining. However, machining high-precision components and their molds/dies using abrasive processes is considerably more difficult due to their complex and non-deterministic nature and textured surfaces. Furthermore, high-energy processes such as laser technology can assist abrasive technologies in ensuring higher precision and efficiency. Precision grinding and polishing processes are primarily used to generate high-quality and functional components, typically made of difficult-to-machine materials. Thus, the surface quality achievable by precision grinding and polishing processes becomes more important for reducing machining time and costs. This special issue features 10 papers on the most recent advances in precision abrasive technologies. These papers cover the following topics: - Ultrasonic grinding of micro holes using cemented WC tools - Drilling holes in CFRP aircraft using cBN electroplated ball end mill - In situ evaluation of drill wear using tool images - Grinding belt based on modified information entropy - Radial directional vibration-assisted grinding of Al2O3 ceramics - Chatter vibration suppression using fixed superabrasive polishing stone - Free abrasive finishing of internal channels with different cross-sectional geometries - High-quality machining of cemented carbide using PCD ball end mills - Fixed-abrasive machining with magnetic brush for Ti-6Al-4V ELI alloy - High-efficient polishing of polymer surfaces using catalyst-referred etching This issue will provide an understanding of the recent developments in abrasive technologies, leading to further research. We deeply appreciate the careful work of all the authors, and we thank the reviewers for their incisive efforts.

Detecting nitrogen-vacancy-hydrogen centers on the nanoscale using nitrogen-vacancy centers in diamond

In diamond, nitrogen defects like the substitutional nitrogen defect (Ns) or the nitrogen-vacancy-hydrogen complex (NVH) outnumber the nitrogen-vacancy (NV) defect by at least one order of magnitude creating a dense spin bath. While neutral Ns has an impact on the coherence of the NV spin state, the atomic structure of NVH reminds of a NV center decorated with a hydrogen atom. As a consequence, the formation of NVH centers could compete with that of NV centers possibly lowering the N-to-NV conversion efficiency in diamond grown with hydrogen-plasma-assisted chemical vapor deposition (CVD). Therefore, monitoring and controlling the spin bath is essential to produce and understand engineered diamond material with high NV concentrations for quantum applications. While the incorporation of Ns in diamond has been investigated on the nano- and mesoscale for years, studies concerning the influence of CVD parameters and the crystal orientation on the NVH formation have been restricted to bulk N-doped diamond providing high-enough spin numbers for electron paramagnetic resonance and optical absorption spectroscopy techniques. Here, we investigate submicron-thick (100)-diamond layers with nitrogen contents of (13.8±1.6)ppm and (16.7±3.6)ppm, and exploiting the NV centers in the layers as local nanosensors, we demonstrate the detection of NVH− centers using double electron-electron resonance (DEER). To determine the NVH− densities, we quantitatively fit the hyperfine structure of NVH− and confirm the results with the DEER method usually used for determining Ns0 densities. With our experiments, we access the spin bath composition on the nanoscale and enable a fast feedback loop in CVD recipe optimization with thin diamond layers instead of resource- and time-intensive bulk crystals. Furthermore, the quantification of NVH− plays a very important role for understanding the dynamics of vacancies and the incorporation of hydrogen into CVD diamond optimized for quantum technologies. Published by the American Physical Society 2024

Laser-assisted surface grinding of innovative superhard SiC-bonded diamond (DSiC) materials

Silicon carbide (SiC)-bonded diamond materials, comprising approximately 50% diamond by volume, represent innovative composites with exceptional mechanical and thermal properties, including high hardness, wear and corrosion resistance, and elevated thermal conductivity. Despite these advantageous properties, the machining of these composites presents formidable challenges due to their extremely high hardness. Grinding with diamond tools is commonly employed among the limited viable machining methods. However, the efficiency of this process is hindered by high grinding forces, elevated temperatures, and significantly high tool wear. Additionally, the surface integrity, form, and dimensional accuracy of the workpiece are compromised by the effects of tool wear and high cutting forces. To address these technological constraints in the grinding of SiC-bonded diamond materials, a laser-assisted grinding process has been developed. Ultra-short pulsed laser radiations were effectively utilized to induce material ablation with controlled structural damages, enhancing the productivity and efficiency of the grinding process through reduced grinding forces, temperatures, and tool wear. Furthermore, this study investigated the influence of grinding tools' specifications, design variations, and parameters on key aspects such as grinding forces, surface quality, and tool wear. Substantial reductions of up to 70% in tangential grinding forces, 83% in normal grinding forces, and a modest improvement in surface roughness achieved. The surface integrity analysis revealed a damage-free ground surface when utilizing laser assistance. Furthermore, there was a substantial enhancement in the grinding ratio (G-ratio), achieving an increase of up to 247%, concurrently with a noteworthy improvement in the actual removal depth, reaching up to 99%, when compared to conventional grinding processes. Compared to the utilized segmented metal bonded diamond grinding wheel, the vitrified bonded diamond grinding wheel induced lower grinding forces and higher actual removal rates.

Latest results from the RD42 collaboration on the radiation tolerance of polycrystalline diamond detectors

As nuclear and particle physics facilities move to higher intensities, the detectors used there must be more radiation tolerant. Diamond is in use at many facilities due to its inherent radiation tolerance and ease of use. In this article we present our radiation tolerance measurements of the highest quality polycrystalline Chemical Vapor Deposition (pCVD) diamond material for irradiations from a range of proton energies, pions and neutrons up to a fluence of 2×1016particles/cm2. We have measured the damage constant as a function of energy and particle species and compared it with theoretical models. We also present measurements of the rate dependence of pulse height for non-irradiated and irradiated pCVD diamond pad and pixel detectors, including detectors tested over a range of particle fluxes up to 20 MHz/cm2 with both pad and pixel readout electronics. Our test beam results indicate a 2% upper limit to the pulse height dependence of unirradiated and neutron irradiated pCVD diamond detectors leading to the conclusion that the pulse height in pCVD diamond detectors is, at most, minimally dependent on the particle flux.

Simulation on an Advanced Double-Sided Cooling Flip-Chip Packaging with Diamond Material for Gallium Oxide Devices.

Gallium oxide (Ga2O3) devices have shown remarkable potential for high-voltage, high-power, and low-loss power applications. However, thermal management of packaging for Ga2O3 devices becomes challenging due to the significant self-heating effect. In this paper, an advanced double-sided cooling flip-chip packaging structure for Ga2O3 devices was proposed and the overall packaging of Ga2O3 chips was researched by simulation in detail. The advanced double-sided cooling flip-chip packaging structure was formed by adding a layer of diamond material on top of the device based on the single-sided flip-chip structure. With a power density of 3.2 W/mm, it was observed that the maximum temperature of the Ga2O3 chip with the advanced double-sided cooling flip-chip packaging structure was 103 °C. Compared with traditional wire bonding packaging and single-sided cooling flip-chip packaging, the maximum temperature was reduced by about 12 °C and 7 °C, respectively. When the maximum temperature of the chip was controlled at 200 °C, the Ga2O3 chip with double-sided cooling packaging could reach a power density of 6.8 W/mm. Finally, by equipping the top of the package with additional water-cooling equipment, the maximum temperature was reduced to 186 °C. These findings highlight the effectiveness of the proposed flip-chip design with double-sided cooling in enhancing the heat dissipation capability of Ga2O3 chips, suggesting promising prospects for this advanced packaging structure.