Abstract
Abstract In the paper, experiments of diamond growth with varied parameters are conducted in the microwave plasma chemical vapor deposition system. The growth mechanism of the diamond is analysed based on the phase diagram. The results show that the growth rate and the crystalline quality of the diamond are influenced by the gas phase and chamber pressure. The oxygen can help to improve the crystalline quality of the diamond, while to decrease the growth rate. The methane concentration and the chamber pressure are also key parameters to influence the quality and the growth rate of the diamond. The nitrogen concentration can contribute to the growth of the diamond, and the thermal conductivity is influenced at the same time. The grown diamond substrate can be used as thermal conductor in power devices with promising thermal conductivity.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call