Device Density Research Articles

High‐Mass‐Loading CoNi‐Layered Double Hydroxide Directly Grown on Brush‐like Cu/Carbon Cloth as High‐Areal‐Capacitance Supercapacitor Electrode

AbstractA combination of high mass loading and efficient utilization of electroactive materials is crucial for simultaneously enhancing the energy and power densities of energy storage devices. This is exemplified herein using cobalt nickel layered double hydroxides nanosheets (CoNi‐LDHs) directly grown on copper nanowires (Cu NWs) standing quasi‐vertically on carbon cloth (CC) to yield a multi‐core‐shell CoNi‐LDHs/Cu NWs/CC as the supercapacitor electrode that exhibits a high areal capacitance of 5.55 F cm−2 (corresponding to a gravimetric capacitance of 1209.15 F g−1) at a large current density of 10 mA cm−2. Such superior rate capability is attributed to the high packing density of CoNi‐LDHs in the electrode, benefitting from the large specific surface area of Cu NWs/CC. Additional contribution stems, on the other hand, from the facile charge transfer kinetics resulted from the elimination of binder from the electrode coupled with the mesopores between not only Cu NWs but also CoNi‐LDHs nanosheets, and the macropores between the carbon fiber of CC. Benefitting from such exceptional rate performance is the supercapacitor built on CoNi‐LDHs/Cu NWs/CC as the positive electrode coupled with bismuth subcarbonate (Bi2O2CO3) as the negative electrode capable of delivering outstanding power density of 13.31 mW cm−2 and energy density of 0.35 mWh cm−2.

Heavy ion irradiation induced failure of gallium nitride high electron mobility transistors: effects of in-situ biasing

While radiation is known to degrade AlGaN/GaN high-electron-mobility transistors (HEMTs), the question remains on the extent of damage governed by the presence of an electrical field in the device. In this study, we induced displacement damage in HEMTs in both ON and OFF states by irradiating with 2.8 MeV Au4+ ion to fluence levels ranging from to ions cm−2, or 0.001–2 displacement per atom (dpa). Electrical measurement is done in situ, and high-resolution transmission electron microscopy (HRTEM), energy dispersive x-ray (EDX), geometrical phase analysis (GPA), and micro-Raman are performed on the highest fluence of Au4+ irradiated devices. The selected heavy ion irradiation causes cascade damage in the passivation, AlGaN, and GaN layers and at all associated interfaces. After just 0.1 dpa, the current density in the ON-mode device deteriorates by two orders of magnitude, whereas the OFF-mode device totally ceases to operate. Moreover, six orders of magnitude increase in leakage current and loss of gate control over the 2-dimensional electron gas channel are observed. GPA and Raman analysis reveal strain relaxation after a 2 dpa damage level in devices. Significant defects and intermixing of atoms near AlGaN/GaN interfaces and GaN layer are found from HRTEM and EDX analyses, which can substantially alter device characteristics and result in complete failure.

Dual Coil Patterned Ultra‐Thin Silicon Film Enable by Double‐Sided Process

AbstractDouble‐sided microfabrication process on an ultra‐thin silicon film has rarely been attempted due to the challenges in terms of the preparation and handling of a thin film in spite of its promising fabrication potentials. Such a process allows for doubling the thin film device density or providing dual functionalities for a thin film depending on whether the front and back sides of a thin film are processed identically or distinctively. Here, a novel double‐sided thin film processing strategy is introduced by realizing a dual coil patterned ultra‐thin silicon film that is working as an actuating or energy harvesting system. Experimentally, a dual coil patterned thin film enabled using the introduced approach shows remarkably enhanced device performance when compared with a single coil patterned counterpart. Furthermore, a multiphysics simulation model is developed and the resultant modeling data validate the experimentally measured performance enhancement. Finally, the structural durability of the thin film upon cyclic loading is tested and its diverse vibration modes are investigated.

Design, Characterization, and In Vivo Application of Multi-Conductive Layer Organic Electrocorticography Probes

Biocompatible and plastic neural interface devices allow for minimally invasive recording of brain activity. Increasing electrode density in such devices is essential for high-resolution neural recordings. Superimposing conductive leads in devices can help multiply the number of recording sites while keeping probes width small and suitable for implantation. However, because of leads' vertical proximity, this can create capacitive coupling (CC) between overlapping channels, which leads to crosstalk. Here, we present a thorough investigation of CC phenomenon in multi-gold layer thin-film multi-electrode arrays with a parylene C (PaC) insulation layer between superimposed leads. We also propose a guideline on the design, fabrication, and characterization of such type of neural interface devices for high spatial resolution recording. Our results demonstrate that the capacitance created through CC between superimposed tracks decreases non-linearly and then linearly with the increase of insulation thickness. We identify an optimal PaC insulation thickness that leads to a drastic reduction of CC between superimposed gold channels while not significantly increasing the overall device thickness. Finally, we show that double gold layer electrocorticography probes with the optimal insulation thickness exhibit similar performances in vivo when compared to single-layer devices. This confirms that these probes are adequate for high-quality neural recordings.

Why material advancement is necessary approach for the 5G wireless era?

The proliferation of mobile devices, enormous data volumes, and faster data transfer speeds have driven the development of 5G wireless communication. This type of network offers widespread connectivity, minimal latency, and swift data speeds, characterized by three key features: massive multi-input multi-output (MIMO), high base station and device densities, and new technology adoption. This article explores the use of nanomaterials such as graphene, carbon nanotubes, metallic nanomaterials, and metamaterials in wideband millimeter-wave nanoantennas to meet the antenna requirements of 5G networks. It also discusses the challenges of commercializing 5G and developing nanomaterials, proposing an atomistic modeling approach as a means of generating innovative nanomaterials for use in 5G and other technologies.

Body Heat Powered Wirelessly Wearable System for Real‐time Physiological and Biochemical Monitoring

AbstractThrough harvesting energy from the environment or human body, self‐power wearable electronics have an opportunity to break through the limitations of battery supply and achieving long‐term continuous operation. Here, a wireless wearable monitoring system driven entirely by body heat is implemented. Based on the principle of maximizing heat utilization, while optimizing internal resistance and heat dissipation, the stretchable TEG improves the power density of previous similar devices from only a few microwatts per square centimeter to tens and makes it possible to continuously drive wireless wearable electronic systems. Furthermore, ceaseless self‐power energy gives wearable electronics unparalleled continuous working ability, which can realize the tracking and monitoring of biochemical and physiological indicators at different time scale. A practical system demonstrates the ability to real‐time monitor heart rate, sweat ingredient and body motion at a high sampling rate. This study marks an important advance of self‐powered wearable electronics for wirelessly real‐time healthy monitoring.

Poly(L-lactic acid)/graphene composite films with asymmetric sandwich structure for thermal management and electromagnetic interference shielding

The blowout growth of the power density and transmission efficiency of microelectronic devices makes the problems of “overheating” and electromagnetic pollution of electronic devices increasingly prominent, and it is raising an urgent demand to improve the thermal conductivity and electromagnetic interference (EMI) shielding performance of packaging materials. Additionally, the environmental damage caused by fossil-based electronic waste should not be ignored. Hence, a scalable production strategy was proposed to prepare sandwich structure poly(L-lactic acid) (PLLA) composite films with high thermal conductivity and excellent EMI shielding efficiency (SE), which was achieved via solution pouring method and stacking hot-pressing process, in which PLLA/graphene nanoplatelets (PLLA/GNPs) with different GNPs contents was the top and substrate layers, and PLLA/poly(D-lactic acid)/Fe3O4 (PLLA/PDLA/Fe3O4) with a small amount of PDLA and Fe3O4 was the middle layer. Owing to the asymmetric distribution of filler and the successful introduction of magnetic particles, when the GNPs and Fe3O4 contents of the whole film are respectively only 5.61 wt% and 4.39 wt%, and the asymmetric ratio is 1:9, the in-plane thermal conductivity (K‖) and EMI SE of the composite film reaches 7.49 W m−1 K−1 and 41.7 dB, respectively, higher than those of PLLA film with symmetric structure (3.31 W m−1 K−1 and 33.0 dB) at the same contents of fillers. Furthermore, a small amount of PDLA (4.39 wt%) promotes the formation of stereocomplex (SC) crystallites in the middle layer and further induces the interlayer SC microcrystals during the stacking hot-pressing process, enhancing the interlayer interaction to maintain the mechanical robustness of the PLLA film. This work provides a new direction for the manufacture of polymer based composite films with high thermal conductivity and directional EMI shielding, and has broad application potential in the field of large-scale production of green electronic products.

In/Ga-Doped Si as Anodes for Si-Air Batteries with Restrained Self-Corrosion and Surface Passivation: A First-Principles Study.

Silicon-air batteries (SABs) are attracting considerable attention owing to their high theoretical energy density and superior security. In this study, In and Ga were doped into Si electrodes to optimize the capability of Si-air batteries. Varieties of Si-In/SiO2 and Si-Ga/SiO2 atomic interfaces were built, and their properties were analyzed using density functional theory (DFT). The adsorption energies of the SiO2 passivation layer on In- and Ga-doped silicon electrodes were higher than those on pure Si electrodes. Mulliken population analysis revealed a change in the average number of charge transfers of oxygen atoms at the interface. Furthermore, the local device density of states (LDDOS) of the modified electrodes showed high strength in the interfacial region. Additionally, In and Ga as dopants introduced new energy levels in the Si/SiO2 interface according to the projected local density of states (PLDOS), thus reducing the band gap of the SiO2. Moreover, the I-V curves revealed that doping In and Ga into Si electrodes enhanced the current flow of interface devices. These findings provide a mechanistic explanation for improving the practical efficiency of silicon-air batteries through anode doping and provide insight into the design of Si-based anodes in air batteries.

Tyrosine-dopamine conjugate head group functionalized bioinspired naphthalene diimide bolaamphiphile: Design, synthesis and efficient supercapacitor applications

Organic material based energy storage devices have been received tremendous attention due to their environmentally friendly and renewable source. Such molecular architectures are regarded as the promising candidates in fabricating lightweight and flexible electrode materials for supercapacitors (SCs). In this work, we designed and successfully synthesized neurotransmitter, dopamine (DP) and natural amino acid, L-tyrosine (Tyr) conjugate functionalized naphthalene diimide (NDI) based electrode materials for SCs electrodes. The resulting electrode material naphthalenediimide-tyrosine-dopamine (NDI-Tyr-DP) in combination with graphite foil (GF) possess higher specific capacitance (Csp) of about 303 F g−1 at 5 mV s−1 scan rate (cyclic voltammetry, CV) and 318 F g−1 at 0.5 A g−1 current density (GCD) in three-electrode system SC device. In a symmetric two-electrode SC setup, the NDI-Tyr-DP/GF electrode exhibited highest Csp up to 85 F g−1 at 0.5 A g−1 current density, which is the competitive value reported for the organic systems. The as-fabricated NDI-Tyr-DP/GF//NDI-Tyr-DP/GF two-electrode symmetric supercapacitor (SSC) showed high energy density of 10.63 Wh kg−1 and power density of 899 W kg−1 at 0.5 A g−1. SSC displayed 77.10 % capacitance retention after 5000 GCD cycles. We expect that the design and construction of SCs with naturally important smart functionalities can open a door to develop new kind of SCs for energy storage devices in future microelectronic areas.

Stable Cycling with Intimate Contacts Enabled by Crystallinity-Controlled PTFE-Based Solvent-Free Cathodes in All-Solid-State Batteries.

All-solid-state batteries (ASSBs) employing Li-metal anodes and inorganic solid electrolytes are attracting great attention due to high safety and energy density for next-generation energy storage devices. However, the volume change of cathode active materials can cause contact loss, resulting in charge carrier isolation, heterogeneous current distribution, and poor electrochemical properties in ASSBs. Here, a simple, yet effective, solvent-free electrode engineering approach with polytetrafluoroethylene (PTFE) as a binder for ASSBs is reported, enabling intimate contact and stable interfaces with the cathode. It is substantiated that the crystallinity of PTFE can be controlled depending on the heat history, and highly crystalline PTFE displays robust mechanical properties. High-nickel LiNi0 . 8 Mn0.1 Co0.1 O2 cathode prepared with crystalline PTFE show improved cycle and rate performances in ASSBs. In addition, it is revealed that the intimate contact between cathode particles with a stable cathode electrolyte layer is maintained during cycling by postmortem studies. This simple engineering method can be applied to prepare cathodes with a variety of active materials and solid electrolytes in ASSBs.

Achieving 17.7% Efficiency of Ternary Organic Solar Cells by Incorporating a High Lowest Unoccupied Molecular Orbital Level and Miscible Third Component

A ternary strategy has been demonstrated as being an effective method to improve the power conversion efficiency (PCE); however, general rules for materials selection are not fully comprehended. Herein, nonfullerene acceptor ITIC‐M and fullerene acceptor PC70BM possessing higher lowest unoccupied molecular orbital (LUMO) and good miscibility with nonfullerene acceptor Y7 are incorporated as third components in the state‐of‐the‐art of PM6:Y7 binary blend. As a result, the device PCE for both ternary devices improves from 16.46% for binary host to 17.73% and 17.67% for ITIC‐M‐ and PC70BM‐based ternary devices, respectively. The higher LUMO of the guest acceptor can play multiple roles to elevate the open‐circuit voltage such as reducing energy‐loss and reverse saturation current, creating less‐localized shallow trap sites along with suppressing charge recombination, and decreasing Urbach energy. Moreover, the good miscibility facilitates an alloy‐like phase in acceptors domain for efficient exciton dissociation and electron transport, which leads to improved short‐circuit current density and fill factor in ternary devices. The results provide a promising approach to realize high‐performance ternary organic solar cells by synergizing the compatible third component with host acceptor.

Friction generated and Hele-Shaw cell designed facile alternative electrodes for high energy density supercapacitors

Design of an electrode is an important aspect to enhance the energy density of an energy storage device. However, challenges with conventional brush-coated electrodes still exist in achieving the goal of stable electrochemical performances. Herein, for the first time, island-structured and fractal-like electrodes are made by the friction generated and lifted Hele-Shaw cell method, respectively, using few-layer graphene (FLG). The island-structured electrodes exhibit a large perimeter-to-area ratio of >1 μm−1 as compared to the fractal-like electrodes. The surface is more irregular, rough, and porous in the case of an island-structured electrodes resulting in a large fractal dimension (Df) of 2.83. The island-structured electrode shows nearly two-fold gravimetric capacitance (CS) of 145 F g−1 at 0.50 A g−1 for three-electrode test as compared to brush-coated (77.2 F g−1) under 0.5 M K2SO4 aqueous electrolyte. However, a symmetric device capacitance (Cdev) of 57.5 F g−1 at 0.50 A g−1 is found for full configuration test for island-structured electrodes. A 27 % enhanced energy density (E) of 5.1 Wh kg−1 at power density (P) of 800 W kg−1 is obtained for island-structured electrodes as compared to brush-coated. Also, charge-transfer resistance (R2) is low for the island-structured electrodes (3.6 Ω). A practical aqueous device with total Cdev of 8.1 F g−1 at 0.1 A g−1 is demonstrated with lighted LED using FLG as the electrode material. Under aqueous electrolyte conditions, the FLG device obtains an E of 4.5 Wh kg−1 at P of 100 W kg−1. Considering its large capacitance, easy fabrication, and short processing time, an island-structured electrode can be a better choice for energy storage devices.

Techno-economic study of very dense optical wireless access using visible or infrared light

Future wireless networks need to serve a high density of end-user devices with a high quality of service. The density of wireless access points and the infrastructure behind them lead to substantial cost. We study this cost impact for the particular case of optical wireless communication [also denoted as light fidelity (LiFi)] in a large manufacturing hall. We compare different LiFi network topologies using visible or infrared light. Considering aspects such as the fronthaul cabling layout, equipment investments, and installation and operational costs for energy and maintenance, different LiFi solutions are analyzed for greenfield and brownfield scenarios. The techno-economic analysis is performed in terms of total cost of ownership as well as the impact of each cost category to the final cost. Furthermore, the cost per delivered Mbps is compared to take into account the expected densification (more bits/s/m2) and satisfy the demand for future wireless traffic. Both delivered capacity and power consumption have been identified as the two most critical parameters.

Construction of indigenous tin incorporated nickel dichalcogenide nanosheets for high energy all solid-state hybrid supercapacitor

Despite solid-state energy storage devices are one of the potential candidates for modern electronics, it usually suffers from poor compatibility with gel electrolyte acquiring insufficient energy density. Continuous efforts have been devoted to overcome the energy density paucity. Here, we highlight the strategy to augment the energy density of solid-state electrochemical energy storage device by constructing indigenous Sn doped nickel dichalcogenides nanosheets along with tunable composition. Micrometre size, flat nanosheets offer high compatibility to the gel electrolyte and their porous structure grant multi directional active site access. Modified electronic structure upon cation/anion substitution gain enhanced charge transfer and increased numbers of active sites. Cooperative features of nanostructures and controlled doping, boosted the specific capacity of samples from 134 to 437 mAh/g with remarkable rate retention of 42–81%. Prepared range of anion/cation/cation & anion doped nickel dichalcogenides, i.e., NiSSe, Ni0.66Sn0.33S2 and Ni0.66Sn0.33SSe further gain benefit upon coupling with freshly prepared N, S doped bio-derived carbon (OP-850). Resultant, all solid-state energy storage devices delivered 54, 78 and 127 mAh/g cell capacity at 3 A/g with outstanding energy density of 54, 78 and 102 Wh/kg, respectively. These comparative interpretations confer, Ni0.66 Sn0.33SSe//N, S doped OP-850 must be the promising all solid-state energy storage device with exceptional energy density outcome. Excellent cycle stability and LED pattern illumination demonstrate the feasibility of the device. Furthermore, such simple scalable synthesis approach could also extend to prepare other doped metal chalcogenides nanosheets, likely achieve breakthroughs in various applications.

Dry Lithography Patterning of Monolayer Flexible Field Effect Transistors by 2D Mica Stamping.

Organic field-effect transistors (OFETs) based on 2D monolayer organic semiconductors (OSC) have demonstrated promising potentials for various applications, such as light emitting diode (LED) display drivers, logic circuits, and wearable electrocardiography (ECG) sensors. To date, the fabrications of this class of highly crystallized 2D organic semiconductors (OSC) are dominated by solution shearing. As these organic active layers are only a few molecular layers thick, their compatibilities with conventional thermal evaporated top electrodes or sophisticated photolithography patterning are very limited, which also restricts their device density. Here, an electrode transfer stamp and a semiconductor patterning stamp are developed to fabricate OFETs with channel lengths down to 3 µm over a large area without using any chemicals or causing any damage to the active layer. 2D 2,9-didecyldinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (C10 -DNTT) monolayer OFETs developed by this new approach shows decent performance properties with a low threshold voltage (VTH ) less than 0.5 V, intrinsic mobility higher than 10 cm2 V-1 s-1 and a subthreshold swing (SS) less than 100 mV dec-1 . The proposed patterning approach is completely comparable with ultraflexible parylene substrate less than 2 µm thick. By further reducing the channel length down to 2 µm and using the monolayer OFET in an AC/DC rectifying circuit, the measured cutoff frequency is up to 17.3 MHz with an input voltage of 4 V. The newly proposed electrode transfer and patterning stamps have addressed the long-lasting compatibility problem of depositing electrodes onto 2D organic monolayer and the semiconductor patterning. It opens a new path to reduce the fabrication cost and simplify the manufacturing process of high-density OFETs for more advanced electronic or biomedical applications.

Design and construction of Langmuir probe diagnostic system for determination of temperature, ion and electron density and potential in IR-IECF device

در این مقاله، هدف طراحی و ساخت سامانه تشخیصی پروب لانگمویر جهت اندازه ­گیری پارامترهای پلاسما در دستگاه گداخت به ­روش محصورسازی الکترواستاتیکی اینرسی ایران (IR-IECF) به­ منظور مشخصه­ یابی چشمه‌­ی پلاسمایی این دستگاه می‌­باشد. بدین‌­منظور، یک سامانه تشخیصی پروب لانگمویر برای اندازه‌­گیری پارامترهای مختلف پلاسما از جمله دمای الکترون­، چگالی الکترون، چگالی یون، و پتانسیل پلاسما طراحی و ساخته شده است. با در نظر گرفتن مشخصات چشمه پلاسمایی دستگاه IR-IECF، الکترود مورد استفاده برای پروب یک مفتول از جنس تنگستن با قطر و طول به ترتیب 3/0 و 5/1 میلی­ متر و محافظ آن لوله‌­ای سرامیکی از جنس آلومینا با قطر داخلی 7/0 سانتی‌­متر انتخاب شده است. جنس اتصلات و پایه نگه‌­دارنده پروب بر روی محفظه خلأ نیز استیل ضدزنگ می‌باشد. مدار الکتریکی پروب قادر است ولتاژ و جریان به ترتیب 500 ولت و 1 میلی ­آمپر را تأمین نماید. نتایج به ­دست آمده نشان می ­دهد در بین دو الکترود و در فاصله 25 میلی­ متری از الکترود بیرونی، دمای الکترون برابر باeV 1/50، چگالی الکترون برابر با 31/m 1015×1/3، پتانسیل پلاسما برابر با V 198 و چگالی یون برابر با 3 1/m1015×4/0 می ­باشد.

Real-space observation of a two-dimensional electron gas at semiconductor heterointerfaces.

Mobile charge carriers are essential components in high-performance, nano-engineered semiconductor devices. Employing charge carriers confined to heterointerfaces, the so-called two-dimensional electron gas, is essential for improving device performance. The real-space visualization of a two-dimensional electron gas at the nanometre scale is desirable. However, it is challenging to accomplish by means of electron microscopy due to an unavoidable strong diffraction contrast formation at the heterointerfaces. We performed direct, nanoscale electric field imaging across a GaN-based semiconductor heterointerface using differential phase contrast scanning transmission electron microscopy by suppressing diffraction contrasts. For both nearly the lattice-matched GaN/Al0.81In0.19N interface and pseudomorphic GaN/Al0.88In0.12N interface, the extracted quantitative electric field profiles show excellent agreement with profiles predicted using Poisson simulation. Furthermore, we used the electric field profiles to quantify the density and distribution of the two-dimensional electron gas across the heterointerfaces with nanometre precision. This study is expected to guide the real-space characterization of local charge carrier density and distribution in semiconductor devices.

Efficient architecture for arithmetic designs using perpendicular NanoMagnetic Logic

As the process of scaling down continues at a rapid pace, there is a growing need for an alternative semiconductor device to replace CMOS. One of the alternatives that attracted a lot of attention is called nanomagnetic logic (NML). This is because NML delivers a high device density in addition to a non-volatility of stored information, beyond-CMOS technologies, and device work at room temperature. It is necessary to lower the circuit density and increase the speed of circuits like adders. Using emerging NML logic, we created a full-adder, and ripple carry adder (RCA) with a minimum area. As a result, the invented multilayer-based decimal design makes use of RCA, and full-adder, for innovative 3D topology. We used an NML framework built with perpendicular nanomagnetic (pNML) layers to simulate the characteristics of these devices. With the adder designs that have been offered the latency values are relatively low while performing exhaustive testing. Using pNML technology, a decimal adder has been constructed for the first time in the literature. In addition, simulations are carried out with the help of the Modelsim simulator. During the process of nanomagnetic designing consideration is given to both of these aspects as latency and area. To create an NML circuit, the tool MagCAD is employed. Results are better using the pNML environment-based full adder, RCA and decimal adder.

Rotation and transportation of liquid crystal droplets for visualizing electric properties of microstructured electrodes

The spatial resolution of typical sensor probes is sufficient for measuring the average electric properties of microelectrical devices, but they are unable to measure the distribution with a spatial precision. Liquid crystal droplets (LCDs) are promising candidate for visualizing the distribution. When voltage is applied, the LCDs show rotational and translational behaviors which depend on the location of LCDs within the devices. We demonstrate that by comparing the experimental and numerical results, the electric field and electrostatic energy distribution are visualized by rotating and transporting LCDs, with a spatial resolution of 10 µm and a detection accuracy of 5 µV/µm. In addition, we produced an array of LCDs by designing periodic modulation of the electrostatic energy density in the model device. These findings show that the LCDs serve as a periodic modulator of the refractive index as well as a sensor for the observation of electric properties of microelectrical devices.

Structure Defects and Photovoltaic Properties of TiO2:ZnO/CuO Solar Cells Prepared by Reactive DC Magnetron Sputtering

The problem of copper diffusion in semiconductor devices has been known for several decades as copper has been used as an interconnecting (bonding) metal and has been intensively studied due to its high diffusion coefficient. The influence of the intensive diffusion of copper, depending on the technology of the deposition regimes, has been investigated in thin-film solar cells based on copper, zinc, and titanium oxides obtained by DC-reactive magnetron sputtering. The observed effect significantly changes the structure of the CuO films and affects the properties of the TiO2:ZnO/CuO photocell. The composition of the layers and the copper diffusion in the photocells were studied using a cross-section obtained by scanning electron microscopy (SEM). The influence of the copper diffusion in the layers on the current–voltage (I-V) and power–voltage (P-V) characteristics and optical properties was investigated. The photoelectric behavior of two structures of thin-film solar cells was confirmed through -V research. The values of the open-circuit voltage (VOC) and short-circuit current density (JSC) of photovoltaic devices reached (11 ÷ 15) mV and (6.1 ÷ 6.8) μA, respectively. Furthermore, the Pmax, FF, RS, and RSH values were calculated and analyzed. The difference in the composition of the upper layer of the structure caused changes in the reflection spectra in the wavelength range of 190–2500 nm and, depending on the wavelength, varies in the range of 0–27%.