AbstractPast few years has witnessed a rapid surge in the design and fabrication of lead halide perovskite solar cells (LH‐PSCs). Methyl ammonium lead iodide (CH3NH3PbI3) is one of the widely used visible light absorbing material towards the fabrication of LH‐PSCs. The CH3NH3PbI3 has a band gap of around 1.55 eV which makes it a suitable visible light sensitizer for the development of high performance next generation LH‐PSCs. In this work, CH3NH3PbI3 has been explored as visible light absorbing layer with mesoscopic device architecture of (FTO/TiO2/CH3NH3PbI3/spiro‐OMeTAD+MoS2/Au) LH‐PSCs. MoS2 has been utilized as hole transport material additive which not only acted as additive but also enhanced the performance of the LH‐PSCs with long term stability. The FTO/TiO2/CH3NH3PbI3/spiro‐OMeTAD+MoS2/Au showed the interesting efficiency of 14.2 % which is higher than that of the FTO/TiO2/CH3NH3PbI3/spiro‐OMeTAD/Au device (11.9 %). This work offers the fabrication of stable and improved LH‐PSCs with device architecture of FTO/TiO2/CH3NH3PbI3/spiro‐OMeTAD+MoS2/Au.