Abstract
In this study, solar cell capacitance simulator (SCAPS) was employed to investigate the impact of bismuth iodide (BiI3) and Cs2BiAgI6on the performance of perovskite solar cell. We analyze the influence of charge carrier mobility on perovskite,IL thickness and effect of series and shunt resistance on the behavior of the cell.Results show that adding a thin layer at the interface between the Perovskite active layer and HTL effectively improve hole extraction by defect passivation,which in turn improve device performance in comparison to a common reference design. Our findings reveal that the structure with Cs2BiAgI6 was more efficient where the optimum configuration was (PSi/CuO/Cs2BiAgI6/perovskite/ ZnO) with power conversion efficiency(PCE) of 19.82 %, Fill Factor (FF) of 68,04 %, open circuit voltage (Voc)of 1,438 V and, Short circuit current (Jsc) of 20,2519 mA. cm − 2. Levelized cost of electricity (LCOE) of PSCs was estimated using the compute unit costs, it was found to be 4.41 US cents / kWh with a lifetime of ten years,below then the cost of conventional PSC devices.
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