Abstract
Perovskite-based solar cells have recently emerged as promising devices in the PV field. Majority of the perovskite material contains lead (Pb) which is toxic in nature which hinder its commercial uses. In this paper, Simulation of a lead-free perovskite solar cell has been discussed where CH3NH3SnI3 is used as an absorber layer. This material is considered due to its low band gap, high visible absorption coefficient, and non-toxic nature. The simulation has been carried out using Solar Cell Capacitance Simulator (SCAPS-1D) tool with the spectrum of AM 1.5 G. The effect of absorber layer thickness, different HTLs (hole transport layer), defect density, doping concentration, working temperature, series resistance, shunt resistance and various back contacts on perovskite solar cell performance are studied with SCAPS-1D. The proposed structure of the optimized device consist of FTO/TiO2/CH3NH3SnI3/CuSbS2/back contact, where titanium dioxide (TiO2), Methyl ammonium tin iodide (CH3NH3SnI3), Copper Antimony Sulfide (CuSbS2) are used as an electron transport layer (ETL), absorber layer, and HTL, respectively. At 300 K, the proposed structure achieves power conversion efficiency (PCE) of 29.74%, open circuit voltage (VOC) of 1.0409 V, short circuit current (JSC) of 33.88 mA/cm2, and fill factor (FF) of 84.31%, respectively.
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