Enhancing photovoltaic efficiency: Integrating graphene and advanced interface layers to reduce the recombination losses in lead-free MASnI3 perovskite solar cells

Abstract

Perovskite solar cells have attracted significant attention within the scientific community due to their rapidly advancing performance. In particular, inorganic perovskite devices are renowned for their remarkable performance and enduring stability. This study introduces a device optimization process guided by modeling to fabricate high-efficiency perovskite solar cells using lead-free n-i-p methyl ammonium tin iodide (MASnI3) materials. We thoroughly examined the impact of both the absorber and interface layers on the optimized structure. Our approach involves employing graphene as the interface layer between the hole transport and absorber layers. Additionally, we utilized ZnO:Al and 3C-SiC as interface layers between the absorber and electron transport layers. The optimization process entails adjusting the thickness of the absorber layer and interface layers while minimizing defect densities. The proposed optimized device structure, FTO/TiO2/ZnO:Al/MASnI3/Graphene/Cu2O/Au, demonstrates theoretical power conversion efficiencies of 30.43 %, fill factors of 89.30 %, a current density of 29.40 mA/cm2, a voltage of 1.1591 V, and a maximum quantum efficiency of 93 %. This research underscores the potential tin-based absorber layer MASnI3 as a non-toxic perovskite material for applications in sustainable energy from renewable sources.