Abstract
The quality of active layer film is the key factor affecting the performance of perovskite solar cells. In this work, we incorporated CsPbI3 quantum dots (QDs) materials into the MAPbI3 perovskite precursor to form photoactive layer. On one hand, CsPbI3 QDs can be used as nucleation center to enhance the compactness of the perovskite film, and on the other hand, partially CsPbI3 QDs can be dissociated as anions and cations to passivate vacancy defects in the perovskite active layer. As a result, the film quality of the active layer was improved remarkably, thus exciton recombination was reduced, and carrier transfer increased accordingly. The devices based on doped-CsPbI3 QDs film had higher short circuit current, open circuit voltage and filling factor. Finally, the power conversion efficiency (PCE) was greatly enhanced from 14.85% to 17.04%. Furthermore, optimized devices also exhibited better stability. This work provides an effective strategy for the processing of high-quality perovskite films, which is of great value for the preparation and research of perovskite photoelectronic devices.
Highlights
Solar energy has been attracting attention as an important representative of renewable and clean energy, and the development of all kinds of low-cost and high-performance solar cells is of great research significance [1,2,3]
It is well known that a large number of defects in polycrystalline perovskite films have an important influence on carrier recombination and ion migration in perovskite solar cells, in which nonradiative recombination is the main means of charge loss, and it largely determines the power conversion efficiency and stability of perovskite solar cells [10,11]
Optimizing the film forming quality of the perovskite active layer and selecting the appropriate interface passivation strategy to passivate the defects of the perovskite film can improve charge extraction and transport to enhance the performance of the perovskite solar cells significantly [12,13,14]
Summary
Solar energy has been attracting attention as an important representative of renewable and clean energy, and the development of all kinds of low-cost and high-performance solar cells is of great research significance [1,2,3]. Optimizing the film forming quality of the perovskite active layer and selecting the appropriate interface passivation strategy to passivate the defects of the perovskite film can improve charge extraction and transport to enhance the performance of the perovskite solar cells significantly [12,13,14]. In this context, Li et al [15] used 4-ammonium chloride butyl phosphonic acid as the additives in the perovskite precursor solution. It is of great significance to select suitable passivators to reduce the introduction of irrelevant ions, and optimize the proportion of elements to prepare efficient and stable PSCs
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