Abstract
AbstractComputational analysis of triple absorber‐based solar cell structure is undertaken. This solar cell device configuration allows better utilization of the incident solar spectrum. Three different absorbers with a band gap in the range 1–1.5 eV are sandwiched between high‐doped p+ and n+ regions in descending order of electron affinity to form an energy‐matched multiple absorber device. A comprehensive analysis of key device parameters influencing performance, including band gap, conduction band alignment, interfacial defects, and thickness, is presented. The optimized triple absorber device shows beyond Shockley–Queisser limit (SQ limit) performance under the constraint of passivated interfaces with defect density below 1013 cm−2. Wide spectrum coverage leads to high short circuit current and an efficiency of 40.3%, which is higher than the SQ limit for single band gap solar cell.
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