Design Of Low Noise Amplifier Research Articles

The Linear, Non-linear Measurements, Analysis and Evaluation for the Design of Ultra-Wideband Low Noise Amplifier

The Linear, Non-linear Measurements, Analysis and Evaluation for the Design of Ultra-Wideband Low Noise Amplifier

A Low Power Inductorless Wideband LNA With GmEnhancement and Noise Cancellation

This letter presents the design of an inductorless low power differential low-noise amplifier (LNA) in 65 nm Low Power (LP) CMOS technology for multi-standard radio applications between 100MHz and 4.3 GHz. Based on the combination of common-gate (CG) and common-source (CS) with shunt feedback (SFB) topologies, the LNA utilizes a cross-coupled push-pull structure to realize ${\text{g}_\text{m}}$ boosting and partial noise cancelling under low power consumption. A cascode transistor is used to alleviate the Miller effect and also constructs a current steering structure to increase the bandwidth and gain. These techniques result in a good overall performance tradeoff after sizing and biasing optimization under the power constraint. A prototype has been implemented and it exhibits a voltage gain of 21.2 dB, an NF of 2.8-4 dB over the frequency range of 100 MHz to 4.3 GHz. It consumes 2 mW from 1.2 V supply and occupies an active area of 0.05 mm2.

디지털 위성 중계기용 SHF 대역 저잡음 증폭장치 설계 및 구현에 대한 연구

본 연구는 디지털위성중계기용 SHF 대역 저잡음증폭장치의 설계 및 구현에 대해 기술하였다. 잡음지수 최소화를 위하여 저잡음 증폭소자인 HEMT(: High Electron Mobility Transistor)소자를 적용하였고, 우주환경에 대한 사전 시뮬레이션 분석을 통하여 장비 오동작 가능성을 최소화 시켰다. 발사환경 시 발생하는 진동 및 우주방사능에 의한 TID(: Total Ionizing Dose)에 대한 시뮬레이션을 통해 신뢰성 있는 저잡음증폭장치를 설계하였으며, 제작 후 주요 성능지표에 대해 만족여부 확인 및 사전 성능 시뮬레이션 결과와 비교하였다. This study describes the design and implementation of SHF band Low Noise Amplifier of Digital Satellite Communication. We have applied to HEMT part to minimize Noise Figure of system. and minimized the potential for the occurrence of such erroneous operation of equipment through the simulations of the space environment. We designed a reliable Low Noise Amplifier through simulation for a TID according to the vibration generated during the launch and space radiation environment, and compared pre-simulation of main performance results to test results about main performances of Low Noise Amplifier after production.

Analysis and design of a Q/V‐band low‐noise amplifier in GaAs‐based 0.1 µm pHEMT technology

In this study, the design of a monolithic wideband low-noise amplifier (LNA) is presented and addressed with circuitry and modelling techniques which make it suitable for system integration. Particular emphasis has been dedicated to the interconnections analysis and to the enforcement of the stability characteristics that is usually a crucial point for LNAs. The proposed monolithic microwave integrated circuit (MMIC) amplifier covers the Q/V band showing valuable linear and non-linear characteristics in the full bandwidth from 40 to 51 GHz. The amplifier has been realised with the new 0.1 µm GaAs pseudomorphic high electron mobility transistor (pHEMT) process provided by UMS Foundry, and it is suitable for radar and space applications. The LNA shows a noise figure <2 dB, a gain of 16 dB with a 1 dB compression point of 5 dBm. The amplifier is matched at both input and output ports, and also the bond wires are taken into account in the design. The integrability characteristics have been validated with measurements in a dedicated Test-Jig.

2.4 GHZ HETERODYNE RECEIVER FOR HEALTHCARE APPLICATION

&lt;p class="lead"&gt;The objective of this research was to design a basic 2.4 GHz heterodyne receiver for healthcare on a 130um CMOS process. The ultimate goal for the wireless industry is to minimize the trade-offs between performance and cost, and between performance and low power consumption design. In the first part, a low noise amplifier (LNA), which is commonly used as the first stage of a receiver, is introduced and simulated. LNA performance greatly affects the overall receiver performance. The LNA was designed at the 2.4 GHz ISM band, using the cascode with an inductive degeneration topology. The second part of this thesis presents a low power 2.4 GHz down conversion Gilbert Cell mixer. In the third part, a high-performance LC-tank CMOS VCO was designed at 2.4 GHz. The design uses using PMOS cross-coupled topology with the varactor for wider tuning range topology. In the first part, a low noise amplifier (LNA) design reaches the NF of 2 dB, has a power consumption of 2.2 mW, and has a gain of 20dB. The second part of this proposal presents a low power 2.4 GHz down conversion Gilbert Cell mixer. The obtained result shows a conversion gain of 14.6 dB and power consumption of 8.2 mW at a 1.3V supply voltage. In the third part, a high-performance LC-tank CMOS VCO was designed at 2.4 GHz. The final simulation of the phase noise is-128 dBc/Hz, and the tuning range is 2.3 GHz-2.5 GHz while the total power consumption is 3.25 mW.&lt;strong&gt; &lt;/strong&gt;The performance of the receiver meets the specification requirements of the desired standard.&lt;/p&gt;

A CMOS low noise transconductance amplifier for 1–6 GHz bands

The linearity and noise requirements in multi-band multi-standard applications make the design of RF CMOS circuits a very challenging task. A low noise transconductance amplifier (LNTA) in 130 nm CMOS technology that operates between 1 and 6 GHz is presented. The LNTA is based on a shunt-feedback (SFB) amplifier with current-reuse scheme and employing the noise-canceling technique used in low-noise amplifier designs for wideband input matching. Two versions of the LNTA were designed in a 130 nm CMOS process and occupy 0.038 and 0.014 mm2 of silicon area while consuming just 9.1 and 7.94 mW, respectively. The second version is an inductorless, smaller, and optimized version of the first one. Post-layout simulations in the temperature range of ź40 to 125 °C show a good trade-off between noise and power-consumption across the frequency span with an average noise figure of 3.8 dB and a minimum transconductance of 41.5 mS over the entire band. Performance variations were estimated at 2 GHz with Monte Carlo analysis.

PERFORMANCE ANALYSIS OF INDUCTIVELY DEGENERATED CMOS LNA

This paper features the design approach of a low noise amplifier (LNA) which dissipates 19.89 mW from a 1.2 V power supply that was designed based on a 0.13 μm RFCMOS process. A detailed methodology that leads to a power-efficient design of the LNA is presented. A theoretical noise figure optimization using fixed power and physics-based gm/ID characteristics were used as a design optimization guide. Simultaneous noise and input matching under constrained power (PCSNIM) was achieved with an extra gate-source capacitor while gain enhancement was obtained by employing a capacitive feedback at the cascode transistor. The LNA is further optimized by implementing the forward biasing scheme to attain good LNA performance at low power. The end-design of the optimized LNA produces a noise figure of 3.55 dB, a power gain of 17.12 dB, a Third Order Input Intercept Point (IIP3) of -19.70 dBm, an input reflection coefficient of -14.15 dB and an output reflection coefficient of -18.37 dB. Simulated results validate peak performance at 2.45GHz, which makes the LNA suitable for Bluetooth and the industrial, scientific and medical (ISM) applications.

Design of Cascaded Common Source Low Noise Amplifier for S-Band using Transconductance Feedback

Background/Objectives: Now-a-days advancements in CMOS technology increase the demand on transceiver design in the aspect of gain, linearity, power, re-configurability and cost-effectiveness. The performance of RF frontend of transceiver system using MOS device are excellent and found to be the par of 3-5 semiconductor technology. Methods/Statistical Analysis: The first component present in transceiver design is Low Noise Amplifier (LNA) which requires high gain, low noise, better input-output matching, low power, good linearity and stability. Trade off between these performances is more complex when transistors operate at reduced supply voltage and reduced power consumption. So many researchers focus to modify the existing topology by adding active/passive feedback elements and/or using current re-use inductors 2,3. But the latter, suffer from large power consumption. Moreover LNA using cascode configuration offers good gain with low power but the circuit has the limitation of output voltage swing 4. So the proposed work focuses on the design of LNA using transconductance feedback in Common Source (CS) configuration circuits. Findings: At RF frequencies, distributed parasitic of the device dominates thus altering the input-output matching characteristics which degrades gain, noise figure and stability of Low Noise Amplifier. So design of multistage LNA with feedback techniques is necessary to increase the gain. The transconductance feedback used in the design of LNA suits well for increase of gain provided if it is properly designed to ensure stability. The proposed work involves the design of MOS based low noise amplifier using single stage and cascaded Common Source (CS) configuration in S-band. By using the transconductance feedback in CS amplifier, the voltage gain is boosted. Using the extracted small signal equivalents, single stage and cascaded CS amplifier with the transconductance feedback are designed and analyzed. Importance of device parasitic like gate to source capacitance, gate to drain capacitance and the output resistance influence the loop gain. This is brought in the design and emphasizes on the proper utilization of these parasitic in LNA design with transconductance feedback. Using a standard 90 nm CMOS process, LNAs have been demonstrated for 2-GHz frequency (S-band) applications. Operated at a supply voltage of 0.6 V, the gain and noise figure of single stage CS LNA with transconductance feedback are observed to be 17.9 dB and 2.1 dB respectively. It is noted that nearly 17% gain improvement has been achieved with excellent input reflection coefficient of -54.8 dB and low power consumption of 2.92 mW. Similarly, for a cascaded CS amplifier when operated at 0.6V, it is observed that the gain and noise figure are found to be 13.6 dB and 2.38 dB respectively. It is noted that nearly 6.25% increase in gain is achieved with appealing reverse gain of -52. 8 dB when compared to cascaded CS circuit without transconductance feedback. Higher reverse gain ensures the stability of the designed amplifier. Applications: The proposed work is needed in the design of transceivers working at S-band (2 GHz - 8 GHz). Few noticeable applications are: Communication satellites (NASA), weather radar systems, microwave ovens and optical communication which require low power modules. Improvements: This work can be further extended to reconfigure the input matching network so that UWB bandwidth is covered.

Design and Simulation of Low Noise Amplifier at 10 GHz By GaN High Electron Mobility Transistor

In this paper, design and simulation of a 10 GHz Low Noise Amplifier (LNA) for Wireless communication systems have been explored. The simulation result has been performed by using the Agilent Advanced Design System (ADS) software. Tuning and optimization tools of ADS software have been used to optimize results. The High Electron Mobility Transistor (HEMT) based on GaN is used for decreasing of Minimum Noise Figure (NFmin) of LNA. Also, for more decreasing NFmin of LNA radial stub elements are implemented in biasing network. We have designed a 10 GHz LNA based on three design manner basing on the lumped, the distributed and radial stub elements. The designed amplifier offers forward gain of 15.72 dB with the noise figure of 1.09 dB at 10 GHz. The input return loss (S11) is equal to -9.635 dB at 10GHz. The output return loss (S22) is equal to -10.009 dB at 10GHz. Also, the isolation (S12) of proposed structure is equal to -22 dB at 10 GHz. The simulation result have shown that the forward gain and noise figure of 10 GHz LNA are optimized noticeably with respect to the pervious works.

A Study on Scalability and Variation of CMOS Low Noise Amplifier in Advance CMOS Technology Processes

Recent technology requires multistandard Radio Frequency (RF) chips for multipurpose wireless applications. In RF circuits, a low-noise amplifier (LNA) plays the key role in determining the receiver’s performance. With CMOS technology scaling, various designs has been adopted to study circuit’s characteristic and variation. In this paper, we present the results of scalable wideband LNA design based on complementary metal oxide semiconductor (CMOS), with its variance study. The design was fabricated in 180nm, 90nm, 65nm and 40nm CMOS technology.

Optimization of 5.5-GHz CMOS LNA parameters using firefly algorithm

This paper presents an optimal design of low noise amplifier (LNA) using an efficient swarm-based optimizer called firefly algorithm (FA). Many researchers have used firefly algorithm to solve various nonlinear engineering problems and reported outstanding results. In view of this, FA is implemented for the first time in this paper to optimize the parameters of LNA like gain and noise figure (NF). Two case studies have been performed which includes the minimization of NF and maximization of gain. Optimization of these two parameters has been carried out by considering each parameter as a single objective function. Penalty factor method is considered for handling the constraints. Other parameters of LNA like power consumption, linearity, and stability are also discussed for both the cases. The designed LNA has a cascode structure with inductive source degeneration topology and is implemented in UMC 0.18-μm CMOS technology using CADENCE software. LNA is designed for 5.5-GHz frequency. The performance of FA in optimizing the parameters of LNA is also compared with the performance of other similar contemporary algorithms like particle swarm optimization (PSO), human behavior PSO (HB-PSO), backtracking search algorithm, and cuckoo search algorithm (CSA). The optimized value of LNA parameter using FA and other algorithms when simulated in MATLAB environment is compared with the simulated result of CADENCE. Statistical analysis is also performed for each case study, and the results are compared with the above-mentioned optimization algorithms. Simulation results, comparative study, and statistical analysis confirm the superiority of FA over other methods in terms of its computational efficiency, consistency, and robustness.

200‐GHz CMOS amplifier with 9‐dB noise figure for atmospheric remote sensing

The feasibility of using CMOS technology for RF amplification in atmospheric remote sensing receiver is studied. The design and measurement results of a 200-GHz low-noise amplifier which is fabricated using a 32-nm SOI CMOS technology are presented. The 8-stage amplifier in a common-source configuration achieves a 9-dB noise figure and 25-dB gain with a power consumption of 33 mW.

Low Power, Low Noise Amplifiers Design and Analysis for RF Receiver Front end Using 90NM CMOS Technology Used for WIMAX Applications

This work is mainly to ensure the reliability of low power low noise amplifier design and analysis which is useful for 4G receiver front ends in particularly WIMAX applications. The low noise amplifiers implemented by using different topologies namely (a) Cascoded Common source amplifier technique(b) Folded Cascode amplifier technique (c) Shunt feedback amplifier technique (d) Current reuse Common gate amplifier with gm boosted technique with 90 nm TSMC CMOS technology, which is used for WIMAX applications with 1V supply. In order to simulate and measurement the parameters such as Scattering parameters(S21, S12 S11. S22 ),noise-figure, input matching, output matching ,stability, linearity the Cadence ,Agilent technologies ADS and lab view graphical software have been used and Compare the performance of the various parameters .

Design of a Sensitive Low Noise Amplifier for Wireless Communication

Design of a Sensitive Low Noise Amplifier for Wireless Communication

Transport conductivity of graphene at RF and microwave frequencies

We measure graphene coplanar waveguides from direct current (DC) to a frequency f = 13.5 GHz and show that the apparent resistance (in the presence of parasitic impedances) has an dependence (where ), but the intrinsic conductivity (without the influence of parasitic impedances) is frequency-independent. Consequently, in our devices the real part of the complex alternating current (AC) conductivity is the same as the DC value and the imaginary part is ∼0. The graphene channel is modeled as a parallel resistive–capacitive network with a frequency dependence identical to that of the Drude conductivity with momentum relaxation time ∼2.1 ps, highlighting the influence of AC electron transport on the electromagnetic properties of graphene. This can lead to optimized design of high-speed analog field-effect transistors, mixers, frequency doublers, low-noise amplifiers and radiation detectors.

LNA with wide range of gain control and wideband interference rejection

ABSTRACTThis work presents a low-noise amplifier (LNA) design with a wide-range gain control characteristic that integrates adjustable current distribution and output impedance techniques. For a given gain characteristic, the proposed LNA provides better wideband interference rejection performance than conventional LNA. Moreover, the proposed LNA also has a wider gain control range than conventional LNA. Therefore, it is suitable for satellite communications systems. The simulation results demonstrate that the voltage gain control range is between 14.5 and 34.2 dB for such applications (2600 MHz); the input reflection coefficient is less than −18.9 dB; the noise figure (NF) is 1.25 dB; and the third-order intercept point (IIP3) is 4.52 dBm. The proposed LNA consumes 23.85–28.17 mW at a supply voltage of 1.8 V. It is implemented by using TSMC 0.18-um RF CMOS process technology.

A novel wide-range continuously-tuneable varactor-based matching network for low-noise amplifiers

With the increasing demand of wideband or multi-standard wireless communications, low-noise amplifiers (LNAs) with wideband characteristics have become a crucial building block of typical receivers. In the design of LNAs, the major parameters such as gain, return loss and noise figure (NF) heavily rely on the input and output matching. In this paper, a novel tuneable matching network is proposed and a wide-range tuneable LNA operating within the range from 1.5 GHz to 2.3 GHz is constructed with this novel matching network. The capacity of this proposed matching structure to be continuously-tuneable is accomplished by utilising varactors of which the capacitance can be optionally controlled. Furthermore, the design theory of the proposed tuneable matching network is derived. A microstrip prototype of the LNA is simulated, fabricated and measured for verification. The LNA prototype maintains gain and return loss over 10 dB in the frequency range from 1.5 GHz to 2.3 GHz. Additionally, all operating-frequency...

An MMIC Low-Noise Amplifier Design Technique

In this paper we discuss the design of low-noise amplifiers (LNAs) for both cryogenic and room-temperature operation in general and take the stability and linearity of the amplifiers into special consideration. Oscillations that can occur within a multi-finger transistor are studied and verified with simulations and measurements. To overcome the stability problem related to the multi-finger transistor design approach a parallel two-finger unit transistor monolithic microwave integrated circuit LNA design technique, which enables the design of wideband and high-linearity LNAs with very stable, predictable, and repeatable operation, is proposed. The feasibility of the proposed design technique is proved by demonstrating a three-stage LNA packaged in a WR10 waveguide housing and fabricated using a 35-nm InP HEMT technology that achieves more than a 20-dB gain from 75 to 116 GHz and 26–33-K noise temperature from 85 to 116 GHz when cryogenically cooled to 27 K.

High power microwave damage mechanism on high electron mobility transistor

In this paper, the damage process and mechanism of the typical high electron mobility transistor by injecting high power microwave signals are studied by simulation and experiment methods. By using the device simulator software Sentaurus-TCAD, a typical two-dimensional electro-thermal model of high electron mobility transistor is established with considering the high-field saturation mobility, Shockley-Read-Hall generation-recombination and avalanche breakdown. The simulation is carried out by injecting the 14.9 GHz, 20 V equivalent voltage signals into the gate electrode. Then, the distributions of the space charge density, electric field, current density and temperature with time are analyzed. During the positive half cycle, a conduction channel appears beneath the gate electrode near the source side within device. It is found that the electric field is extremely strong and the current density is very large. Therefore, the temperature increases mainly occurs beneath the gate electrode near the source side. During the negative half cycle, because of the concentration of the large number of carriers induced by avalanche breakdown, the electric field is stronger than that in the positive half cycle. But the current density is lower than that in positive half cycle. Therefore, the increase of temperature is dominated by the electric field. With the effects of both strong electric field and high current density, the temperature of the transistor rises in the whole signal cycle. In addition, temperature in the positive half-cycle rises faster than that in the negative half-cycle.Furthermore, the peak temperature appears at the location beneath gate electrode near the source side because the electric field and current density are strongest in this area. When the temperature within the device is higher than 750 K, intrinsic breakdown occurs in GaAs material, so the heating process becomes quicker. With the temperature increases, the GaAs reaches its melting point, and the device fails permanently. Furthermore, taking the original phase of 0 and for example, we discuss the influences of different original phases on damage process. It is shown that when original phase is zero, the temperature increase rate is faster, and the burn-out time is shorter.Failure analysis of high electron mobility transistor devices damaged by microwaves is carried out with scanning electron microscope, and the simulation results are well consistent with the experimental results. The conclusion may provide guidance for studying high power microwave defense of low noise amplifier and rugged design of high electron mobility transistor in fabrication technology.

A design of LNA and RFVGA with broadband and wide dynamic gain range for digital video broadcasting application

ABSTRACTA low noise amplifier (LNA) and a radio frequency variable gain amplifier (RFVGA) were designed for digital video broadcasting‐satellite second edition (DVB‐S2) receiver tuner integrated circuit using a CMOS 0.18‐μm process. To achieve broadband and dynamic gain range characteristics, a switching filter technique was modified and applied to the LNA. An RFVGA was designed using Gilbert cell topology to achieve the wide dynamic gain range. In addition to the LNA and RFVGA, two 15 dB attenuators were designed and placed in front of the LNA, which can be separated into three voltage gain modes, such as −15 dB, 0 dB, and 15 dB, according to the strength of the input signal power. Good noise performance was achieved in high‐gain mode, and high linearity characteristics were achieved in low‐gain mode. The designed CMOS LNA and RFVGA achieved a 50 dB gain dynamic range, a noise figure below 5.1 dB, an input third‐order intercept point of 13.08 dBm, and an input second‐order intercept point of 24.98 dBm at −15 dB voltage gain with a layout size of the total chip area of 1500 × 600 μm2. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:418–423, 2016