Design and Simulation of Low Noise Amplifier at 10 GHz By GaN High Electron Mobility Transistor

Abstract

In this paper, design and simulation of a 10 GHz Low Noise Amplifier (LNA) for Wireless communication systems have been explored. The simulation result has been performed by using the Agilent Advanced Design System (ADS) software. Tuning and optimization tools of ADS software have been used to optimize results. The High Electron Mobility Transistor (HEMT) based on GaN is used for decreasing of Minimum Noise Figure (NFmin) of LNA. Also, for more decreasing NFmin of LNA radial stub elements are implemented in biasing network. We have designed a 10 GHz LNA based on three design manner basing on the lumped, the distributed and radial stub elements. The designed amplifier offers forward gain of 15.72 dB with the noise figure of 1.09 dB at 10 GHz. The input return loss (S11) is equal to -9.635 dB at 10GHz. The output return loss (S22) is equal to -10.009 dB at 10GHz. Also, the isolation (S12) of proposed structure is equal to -22 dB at 10 GHz. The simulation result have shown that the forward gain and noise figure of 10 GHz LNA are optimized noticeably with respect to the pervious works.