Abstract

This paper presents single stage design of low noise amplifier(LNA) common gate(CG) current reused topology using pseudomorphic high electron mobility transistors(pHEMT) for wind profiling radar application at 1.3 GHz. Though CG current reused topology is not sufficient for achieving the desired parameter of LNA such as noise figure, input and output return losses and stability, so source degenerated inductor topology is also used along with the current used topology for achieving desired parameter. Low loss and low cost RT/ duroid RO4003C substrate is used. The single stage LNA results show that overall gain (S 21 ) of 22.149 dB and a noise figure of 0.364 dB. Input and output return losses are less than −10 dB and total power consumption is 180 mW. To perform the linearity, input intercept point (IIP3) and output intercept point (OIP3) is simulated as 31.01 dBm, 47.95 dBm respectively.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call